5076 series VCXO Module IC with Built-in Varicap OVERVIEW The 5076 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any external components. Also, they employ a regulated voltage drive oscillator circuit that significantly reduces current consumption, crystal current, and oscillation characteristics supply voltage dependency. The 5076 series are ideal for miniature, wide pulling range, low power consumption, VCXO modules. FEATURES ■ ■ ■ ■ ■ ■ VCXO with recently developed varicap diode built-in New fabrication process that significantly reduces parasitic capacitance and provides wide pulling range even when using miniature crystal units Regulated voltage drive oscillator circuit for reduced power consumption, crystal drive current, and oscillation characteristics voltage dependency Wide frequency pulling range • ± 160ppm (B1 version, f = 27MHz) (Crystal: γ = 300, C0 = 1.5pF) Operating supply voltage range: 1.6V to 2.0V Oscillation frequency range (for fundamental oscillation): 20MHz to 55MHz (varies with version) ■ ■ ■ ■ ■ ■ Low current consumption: 0.5mA (B1 version, f = 27MHz, no load, VDD = 1.8V) Frequency divider built-in • Selectable by version: fO, fO/2, fO/4, fO/8, fO/16 • Frequency divider output for 1.3MHz (min) low frequency output VC pin input resistance: 10MΩ (min) CMOS output Two types of pad layout selectable by mounting method • A× version: for Flip Chip Bonding • B× version: for Wire Bonding Package: Wafer form (WF5076××) Chip form (CF5076××) APPLICATIONS ■ 2.5 × 2.0mm, 3.2 × 2.5mm size miniature VCXO modules for digital mobile TV tuner, digital TV (PDP, LCD), PND (Personal Navigation Device), etc. ORDERING INFORMATION Device Package WF5076××−4 Wafer form CF5076××−4 Chip form SEIKO NPC CORPORATION —1 5076 series SERIES CONFIGURATION Operating supply voltage range [V] PAD layout Output frequency and version name*2 Recommended operating frequency range*1 [MHz] fO output fO/2 output fO/4 output fO/8 output fO/16 output 20 to 40 (5076A1) (5076A2) (5076A3) (5076A4) (5076A5) 40 to 55 (5076AJ) (5076AK) (5076AL) (5076AM) (5076AN) 20 to 40 5076B1 (5076B2) (5076B3) (5076B4) (5076B5) 40 to 55 5076BJ (5076BK) (5076BL) (5076BM) (5076BN) Flip Chip Bonding 1.6 to 2.0 Wire Bonding *1. The recommended operating frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. *2. Versions in parentheses ( ) are under development. VERSION NAME Device Package WF5076××–4 Wafer form CF5076××–4 Chip form Version name WF5076 Form WF: Wafer form CF: Chip (Die) form −4 Oscillation frequency range, frequency divider function Pad layout type A: for Flip Chip Bonding B: for Wire Bonding SEIKO NPC CORPORATION —2 5076 series PAD LAYOUT (Unit: µm) ■ 5076A× (for Flip Chip Bonding) ■ 5076B× (for Wire Bonding) (420, 345) Y VSS 5 VC 6 (0,0) 1 (−420, −345) 4 Q 3 VDD (420, 345) Q 5 Y VDD 6 2 XT (−420, −345) XTN X 2 XTN XT 3 VC Chip size: 0.84 × 0.69mm Chip thickness: 130µm ± 15µm PAD size: 90µm × 90µm Chip base: VSS level PIN DESCRIPTION Pad dimensions [µm] Pad No. 1 VSS X Chip size: 0.84 × 0.69mm Chip thickness: 130µm ± 15µm PAD size: 90µm × 90µm Chip base: VSS level PAD DIMENSIONS (0,0) 4 Pad No. Pin I/O 2 XT I Crystal connection pin (amplifier input) 2 1 XTN O Crystal connection pin (amplifier output) –21 3 6 VDD – (+) supply pin 315 225 4 5 Q O Clock output pin 5 –315 225 5 4 VSS – (−) supply pin 6 –315 –21 6 3 VC I Oscillation frequency control voltage input pin (positive polarity) (frequency increases with increasing voltage) X Y 5076A× 5076B× 1 –189 –240 1 2 189 –240 3 315 4 Description BLOCK DIAGRAM Voltage Regulator Rf VDD CIN Oscillation Detector XT RD COUT XTN RVC2 VC 1 N *1 RVC1 CVC1 Level Shifter CMOS ouput Buffer Q CVC2 VSS *1. N = 1, 2, 4, 8, 16 SEIKO NPC CORPORATION —3 5076 series ABSOLUTE MAXIMUM RATINGS VSS = 0V Parameter Symbol Conditions Rating Unit −0.5 to 7.0 V Supply voltage range VDD Between VDD and VSS Input voltage range VIN Input pins −0.5 to VDD + 0.5 V −0.5 to VDD + 0.5 V −65 to +150 °C 20 mA Output voltage range VOUT Output pins Storage temperature range TSTG Wafer form, chip form Output current IOUT Q pin RECOMMENDED OPERATING CONDITIONS VSS = 0V Rating Parameter Symbol Conditions Unit Min Typ Max Operating supply voltage VDD CLOUT ≤ 15pF 1.6 – 2.0 V Input voltage VIN Input pins VSS – VDD V –40 – +85 °C 5076×1 to 5076×5 20 – 40 MHz 5076×J to 5076×N 40 – 55 MHz 5076×1 to 5076×5 1.25 – 40 MHz 5076×J to 5076×N 2.5 – 55 MHz Operating temperature TOPR Oscillation frequency*1 fO Output frequency fOUT CLOUT ≤ 15pF *1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. SEIKO NPC CORPORATION —4 5076 series ELECTRICAL CHARACTERISTICS 5076×1 to 5076×5 VDD = 1.6 to 2.0V, VC = 0.5VDD, VSS = 0V, Ta = –40 to +85°C unless otherwise noted. Rating Parameter Current consumption Symbol IDD Conditions Unit Min Typ Max 5076×1 (fO), Measurement circuit 1, no load, fO = 27MHz, fOUT = 27MHz, VDD = 1.8V – 0.5 1.0 mA 5076×2 (fO/2), Measurement circuit 1, no load, fO = 27MHz, fOUT = 13.5MHz, VDD = 1.8V – 0.4 0.8 mA 5076×3 (fO/4), Measurement circuit 1, no load, fO = 27MHz, fOUT = 6.75MHz, VDD = 1.8V – 0.3 0.6 mA 5076×4 (fO/8), Measurement circuit 1, no load, fO = 27MHz, fOUT = 3.38MHz, VDD = 1.8V – 0.3 0.6 mA 5076×5 (fO/16), Measurement circuit 1, no load, fO = 27MHz, fOUT = 1.69MHz, VDD = 1.8V – 0.3 0.6 mA HIGH-level output voltage VOH Q pin, Measurement circuit 2, IOH = –2.0mA VDD – 0.4 – – V LOW-level output voltage VOL Q pin, Measurement circuit 2, IOL = 2.0mA – – 0.4 V Oscillator block built-in resistance RVC1 210 420 840 kΩ 210 420 840 kΩ VC = 0.2V – 4.7 – pF VC = 0.9V – 2.9 – pF VC = 1.6V – 1.7 – pF VC = 0.2V – 4.7 – pF VC = 0.9V – 2.9 – pF VC = 1.6V – 1.7 – pF Measurement circuit 3 RVC2 CVC1 Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. Oscillator block built-in capacitance CVC2 VC input resistance RVIN Measurement circuit 4, Ta = 25°C 10 – – MΩ VC input impedance ZVIN Measurement circuit 5, VC = 0V, f = 10kHz, Ta = 25°C (a monitor pattern on a wafer is tested) – 530 – kΩ VC input capacitance CVIN Measurement circuit 5, VC = 0V, f = 10kHz, Ta = 25°C (a monitor pattern on a wafer is tested) – 31 – pF fm Measurement circuit 6, –3dB frequency, VDD = 1.8V, VC = 1.8Vp-p, Ta = 25°C, fO = 27MHz – 100 – kHz Modulation characteristics*1 *1. The modulation characteristics may vary with the crystal used. SEIKO NPC CORPORATION —5 5076 series 5076×J to 5076×N VDD = 1.6 to 2.0V, VC = 0.5VDD, VSS = 0V, Ta = –40 to +85°C unless otherwise noted. Rating Parameter Current consumption Symbol IDD Conditions Unit Min Typ Max 5076×J (fO), Measurement circuit 1, no load, fO = 48MHz, fOUT = 48MHz, VDD = 1.8V – 0.9 1.8 mA 5076×K (fO/2), Measurement circuit 1, no load, fO = 48MHz, fOUT = 24MHz, VDD = 1.8V – 0.6 1.2 mA 5076×L (fO/4), Measurement circuit 1, no load, fO = 48MHz, fOUT = 12MHz, VDD = 1.8V – 0.5 1.0 mA 5076×M (fO/8), Measurement circuit 1, no load, fO = 48MHz, fOUT = 6MHz, VDD = 1.8V – 0.4 0.8 mA 5076×N (fO/16), Measurement circuit 1, no load, fO = 48MHz, fOUT = 3MHz, VDD = 1.8V – 0.4 0.8 mA HIGH-level output voltage VOH Q pin, Measurement circuit 2, IOH = –2.0mA VDD – 0.4 – – V LOW-level output voltage VOL Q pin, Measurement circuit 2, IOL = 2.0mA – – 0.4 V Oscillator block built-in resistance RVC1 210 420 840 kΩ 210 420 840 kΩ VC = 0.2V – 4.7 – pF VC = 0.9V – 2.9 – pF VC = 1.6V – 1.7 – pF VC = 0.2V – 4.7 – pF VC = 0.9V – 2.9 – pF VC = 1.6V – 1.7 – pF Measurement circuit 3 RVC2 CVC1 Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. Oscillator block built-in capacitance CVC2 VC input resistance RVIN Measurement circuit 4, Ta = 25°C 10 – – MΩ VC input impedance ZVIN Measurement circuit 5, VC = 0V, f = 10kHz, Ta = 25°C (a monitor pattern on a wafer is tested) – 530 – kΩ VC input capacitance CVIN Measurement circuit 5, VC = 0V, f = 10kHz, Ta = 25°C (a monitor pattern on a wafer is tested) – 31 – pF fm Measurement circuit 6, –3dB frequency, VDD = 1.8V, VC = 1.8Vp-p, Ta = 25°C, fO = 48MHz – 35 – kHz Modulation characteristics*1 *1. The modulation characteristics may vary with the crystal used. SEIKO NPC CORPORATION —6 5076 series SWITCHING CHARACTERISTICS VDD = 1.6 to 2.0V, VC = 0.5VDD, VSS = 0V, Ta = –40 to +85°C unless otherwise noted. Rating Parameter Symbol Conditions Unit Min Typ Max Output rise time tr Measurement circuit 7, 0.2VDD → 0.8VDD, CLOUT = 15pF – 3.1 6.0 ns Output fall time tf Measurement circuit 7, 0.8VDD → 0.2VDD, CLOUT = 15pF – 3.1 6.0 ns Measurement circuit 7, Ta = 25°C, CLOUT = 15pF, VDD = 1.8V 45 50 55 % Output duty cycle Duty Switching Time Measurement Waveform 0.8VDD TW 0.2VDD 0.2VDD DUTY measurement voltage (0.5VDD) DUTY= TW/ T 100 (%) T tr Q 0.8VDD tf SEIKO NPC CORPORATION —7 5076 series MEASUREMENT CIRCUITS Measurement Circuit 1 Measurement Circuit 4 Measurement parameter: IDD Measurement parameter: RVIN IDD A VDD XT IVIN A VDD XT Crystal XTN Q IVIN VC VSS VC 0.1µF VDD RVIN = XTN VSS Measurement Circuit 5 Measurement parameter: CVIN, ZVIN Measurement Circuit 2 Measurement parameter: VOH, VOL VDD XT Signal Generator VDD 0.001µF XT XTN 0.1µF 50Ω XTN 50Ω Q VOH VOL V VC VSS 0.1µF VS Impedance Analyzer (HP 4194A) Q VC VSS VC input signal: 100Hz to 10kHz, 0.1Vp-p ∆V VOH VS VS adjusted such that ∆V = 50 × IOH. VS VOL ∆V Measurement Circuit 6 Measurement parameter: fm VS adjusted such that ∆V = 50 × IOL. VDD XT input signal: 1Vp-p, sine wave Gain-phase Analyzer (HP 4194A) Measurement Circuit 3 Measurement parameter: RVC1, RVC2 IXT A VDD IXTN A Modulaiton Analyzer (HP 8901B) VDD XT XT XTN XTN VC RVC1 = VSS VDD IXT Modulation signal C1 0.1µF XTN Q R1 VC VSS R2 CLOUT = 15pF Demodulation signal C1 = 33µF, R1 = R2 = 1MΩ VC modulation signal: 100Hz to 100kHz, 0 to VDDp-p Measurement Circuit 7 VC VSS XT Crystal RVC2 = Measurement parameter: Duty, tr , tf VDD VDD IXTN Crystal XT XTN Q VC 0.1µF VSS CLOUT = 15pF (Including probe capacitance) SEIKO NPC CORPORATION —8 5076 series FUNCTIONAL DESCRIPTION Oscillation Start-up Detector Function The devices also feature an oscillation start-up detector circuit. This circuit functions to disable the outputs until the oscillation starts. This prevents unstable oscillator output at oscillator start-up when power is applied. TYPICAL PERFORMANCE (5076B1) The following characteristics measured using the crystal below. Note that the characteristics will vary with the crystal used. ■ Crystal used for measurement ■ Parameter fO = 27MHz C0 [pF] 1.5 γ (= C0/C1) 300 Crystal parameters C1 L1 R1 C0 Frequency Pulling Range Pulling Sensitivity 250 250 200 200 Sensitivity [ppm/V] Pulling range [ppm] 150 100 50 0 −50 −100 −150 150 100 50 −200 −250 0.0 0 0.3 0.6 0.9 1.2 1.5 1.8 VC [V] VDD = 1.8V, fOUT = 27MHz, Ta = R.T. 0.0 0.3 0.6 0.9 VC [V] 1.2 1.5 1.8 VDD = 1.8V, fOUT = 27MHz, Ta = R.T. Measurement circuit VDD Crystal XT XTN Q VC 0.1µF VSS CLOUT = 15pF (Including probe capacitance) SEIKO NPC CORPORATION —9 5076 series Current Consumption Measurement circuit 5 IDD A IDD [mA] 4 VDD XT Crystal 3 XTN 2 CLOUT = 15pF 0 VC VC = 0V VC = 0.5VDD VC = VDD 1 1.7 0.1µF VSS VC = 0V VC = 0.5VDD VC = VDD CLOUT = No load 1.6 Q 1.8 1.9 2.0 VDD [V] fOUT = 27MHz, Ta = R.T. Frequency Stability by Supply Voltage Change Measurement circuit 3.0 VDD 2.0 Crystal ∆f/f [ppm] 1.0 XT XTN 0.0 Q 0.1µF VC = 0V VC = 1.8V VC = 0.9V VC CLOUT = 15pF (Including probe capacitance) VSS −1.0 −2.0 −3.0 1.6 1.7 1.8 1.9 2.0 VDD [V] fOUT = 27MHz, ± 0ppm at VDD = 1.8V Drive Level Measurement circuit 30 25 VDD Drive level [µW] Crystal 20 Tektronix CT-6 Current Probe 15 0.1µF XT XTN Q IX'tal VC VSS 10 CLOUT = 15pF 5 0 0.0 0.3 0.6 0.9 VC [V] 1.2 VDD = 1.8V, fOUT = 27MHz, Ta = R.T. 1.5 1.8 DL = (IX’tal)2 × Re DL: drive level IX’tal: current flowing to crystal (RMS value) Re: crystal effective resistance SEIKO NPC CORPORATION —10 5076 series Negative Resistance 15 Frequency [MHz] 25 30 35 20 Measurement circuit 40 45 Negative resistance [Ω] 0 Network Analyzer (Agilent 4396B) S-Parameter Test Set (Agilent 85046A) VC = 1.8V −200 −400 C0 = 2pF VDD 0.1µF XT XTN Q VC VC = 0.9V VSS −600 VC = 0V −800 VDD = 1.8V, C0 = 2pF, Ta = R.T. Note. "C0" value is set, concerning the actual crystal characteristics connected between XT and XTN. The data is measured with Agilent 4396B using NPC’s original measurement jig. The values may vary with measurement jig and conditions. Phase Noise Measurement circuit Phase noise [dBc/Hz] −60 VDD −80 Crystal XT 0.1µF 200Ω −100 XTN Q 0.01µF Signal Source Analyzer (Agilent E5052A) VC −120 VSS −140 CLOUT = 15pF VC = 1.8V VC = 0.9V VC = 0V −160 10 100 1,000 10,000 100,000 1,000,000 10,000,000 Offset Frequency [Hz] VDD = 1.8V, fOUT = 27MHz, Ta = R.T. SEIKO NPC CORPORATION —11 5076 series Modulation Characteristics Measurement circuit 3 VDD fm [dB] 0 Crystal −3 Gain-phase Analyzer (HP 4194A) −6 Modulaiton Analyzer (HP 8901B) −9 −12 0 1 10 Frequency [kHz] 100 1000 Modulation signal C1 XT 0.1µF XTN Q R1 VC VSS R2 CLOUT = 15pF Demodulation signal C1 = 33µF, R1 = R2 = 1MΩ VC modulation signal: 100Hz to 100kHz, 0 to VDDp-p VDD = 1.8V, fOUT = 27MHz, Ta = R.T. Output Waveform Measurement equipment: Oscilloscope; DSO80604B (Agilent) Measurement circuit VDD Crystal XT XTN Q VC 0.1µF VSS CLOUT = 15pF (Including probe capacitance) VDD = 1.8V, fOUT = 27MHz, VC = 0.5VDD, CLOUT = 15pF, Ta = R.T. SEIKO NPC CORPORATION —12 5076 series Please pay your attention to the following points at time of using the products shown in this document. The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties. Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document. Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. SEIKO NPC CORPORATION 15-6, Nihombashi-kabutocho, Chuo-ku, Tokyo 103-0026, Japan Telephone: +81-3-6667-6601 Facsimile: +81-3-6667-6611 http://www.npc.co.jp/ Email: [email protected] NC0811AE 2009.02 SEIKO NPC CORPORATION —13