SAVANTIC BU2520AF Silicon npn power transistor Datasheet

SavantIC Semiconductor
Product Specification
BU2520AF
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·High voltage
·High speed switching
APPLICATIONS
· For use in horizontal deflection circuits
of large screen colour TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7.5
V
IC
Collector current (DC)
10
A
ICM
Collector current (Pulse)
25
A
IB
Base Collector current (DC)
6
A
IBM
Base current (Pulse)
9
A
Ptot
Total power dissipation
45
W
Tj
Tstg
Max.operating junction temperature
Storage temperature
TC=25
150
-65~150
SavantIC Semiconductor
Product Specification
BU2520AF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
800
VEBO
Emitter-base breakdown voltage
IB=1mA ;IC=0
7.5
VCEsat
Collector-emitter saturation voltage
IC=6A ;IB=1.2 A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=1.2 A
1.1
V
ICES
Collector cut-off current
VCE=BVCES; VBE=0
Tj=125
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=7.5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
Collector capacitance
IE=0; f=1MHz;VCB=10V
CC
CONDITIONS
2
MIN
TYP.
MAX
UNIT
V
13.5
V
13
5
7
115
9.5
pF
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
BU2520AF
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