Plastic-Encapsulate Transistors FEATURES FMMT491(NPN) Low equivalent on-resistance Marking:491 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 1000 mA Collector Power Dissipation PC 250 mW Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter 1. BASE SOT-23 2. EMITTER 3. COLLECTO unless otherwise specified) Symbol Collector-base breakdown voltage VCBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Test conditions Min Typ Max Unit IC=100μA,IE=0 80 V VCEO IC=10mA,IB=0 60 V VEBO IE=100μA,IC=0 5 V 1 Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.1 μA hFE(1) VCE=5V,IC=1mA 100 VCE=5V,IC=500mA 100 hFE(2) 1 hFE(3) 1 hFE(4) 1 300 DC current gain VCE(sat)1 1 VCE(sat)2 1 VBE(sat) 1 Collector-emitter saturation voltage Base-emitter saturation voltage 1 VCE=5V,IC=1A 80 VCE=5V,IC=2A 30 IC=500mA,IB=50mA 0.25 V IC=1A,IB=100mA 0.5 V IC=1A,IB=100mA 1.1 V 1 V Base-emitter voltage VBE Transition frequency fT VCE=10V,IC=50mA,,f=100MHz Collector output capacitance Cob VCB=10V,f=1MHz 1Measured under pulsed conditions, Pulse width=300 VCE=5V,IC=1A 150 MHz 10 pF s, Duty cycle 2%. GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P1 Plastic-Encapsulate Transistors FMMT491 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P2