Central CBRHD-01 Surface mount high density Datasheet

CBRHD-01
SURFACE MOUNT
HIGH DENSITY
0.8 AMP
SILICON BRIDGE RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHD-01 is a
silicon full wave bridge rectifier mounted in a durable
epoxy surface mount molded case, utilizing glass
passivated chips.
MARKING CODE: CBD1
FEATURES:
HD DIP CASE
• This series is UL listed: file number E130224
• Efficient use of board space: requires only 42mm2 of board
space vs. 120mm2 of board space needed for industry
standard 1.0 Amp surface mount bridge rectifier.
• 50% higher density (Amps/mm2) than the industry standard
1.0 Amp surface mount bridge rectifier.
• Glass passivated chips for high reliability.
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
SYMBOL
VRRM
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TA=40°C) (Note1)
Average Forward Current (TA=40°C) (Note 2)
Peak Forward Surge Current
Operating and Storage Junction Temperature
Thermal Resistance (Note 3)
100
UNITS
V
VR
VR(RMS)
IO
100
V
70
V
0.5
A
IO
0.8
A
IFSM
TJ, Tstg
ΘJA
30
A
-65 to +150
°C
85
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
TYP
MAX
IR
VR= 100V
5.0
IR
VF
VR= 100V, TA=125°C
IF=400mA
CJ
VR=4.0V, f=1.0MHz
500
1.0
9.0
UNITS
µA
µA
V
pF
Notes: (1) Mounted on Glass-Epoxy PCB.
(2) Mounted on Ceramic PCB.
(3) Mounted on PCB with 0.5” x 0.5” copper pads.
R2 (4-January 2010)
CBRHD-01
SURFACE MOUNT
HIGH DENSITY
0.8 AMP
SILICON BRIDGE RECTIFIER
HD DIP CASE - MECHANICAL OUTLINE
MARKING CODE: CBD1
R2 (4-January 2010)
w w w. c e n t r a l s e m i . c o m
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