IGBT Optimized for IXGA 12N120A2 IXGP 12N120A2 VCES = 1200 V = 24 A IC25 VCE(sat) = 3.0 V switching up to 5KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms 48 A SSOA VGE = 15 V, TVJ = 125°C, RG = 100 Ω ICM = 24 A (RBSOA) Clamped inductive load PC TC = 25°C TO-220AB (IXGP) G C E TO-263 AA (IXGA) @ 0.8 VCES G 75 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque with screw M3 Mounting torque with screw M3.5 Weight TO-220 TO-263 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g E C (TAB) Features • International standard packages JEDEC TO-220AB and TO-263AA • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES IC = 250 µA, VGE = 0 V 1200 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15V © 2004 IXYS All rights reserved V 5.0 V TJ = 25°C 25 µA TJ = 125°C 250 µA ±100 nA 3.0 V 2.4 • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies discharge • Capacitor Advantages • Easy to mount with one screw • Reduces assembly time and cost • High power density DS99199(8/04) IXGA12N120A2 IXGP12N120A2 TO-220 AB Dimensions Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. IC = IC90 VCE = 10 V 4.0 7.8 S 35 A Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % IC(on) VGE = 10 V, VCE = 10V 530 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc pF 30 pF 4 pF 24 nC 5.5 nC 8.8 nC td(on) Inductive load, TJ = 25°°C 15 ns tri IC = IC90, VGE = 15 V 30 ns td(off) VCE = 960 V, RG = Roff = 100 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG tfi Eoff td(on) tri Eon td(off) tfi Eoff ns 650 1000 ns 5.4 Inductive load, TJ = 125°°C IC 680 1000 = IC90, VGE = 15 V VCE = 960 V, RG = Roff = 100 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG ns 30 ns 0.5 mJ 700 ns 1050 ns 7.7 mJ 1.66 TO-220 0.5 2 - Collector 4 - Collector Bottom Side mJ 15 RthJC RthCK 9.0 Pins: 1 - Gate 3 - Emitter TO-263 AA Outline K/W K/W 1. 2. 3. 4. Min. Recommended Footprint (Dimensions in inches and mm) Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Gate Collector Emitter Collector Bottom Side 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXGA12N120A2 IXGP12N120A2 Fig. 1. Output Characteristics @ 25 ºC Fig. 2. Extended Output Characteristics @ 25 ºC 70 24 22 VGE = 15V 20 13V 11V 13V 50 16 9V 14 I C - Amperes I C - Amperes 18 VGE = 15V 60 12 10 7V 8 11V 40 9V 30 20 6 7V 4 10 2 5V 0 5V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 5 10 V C E - Volts 25 30 1.7 24 VGE = 15V 20 13V 11V VGE = 15V 1.6 1.5 VC E (sat)- Normalized 22 18 I C - Amperes 20 Fig. 4. Dependence of V CE(sat) on Tem perature Fig. 3. Output Characteristics @ 125 ºC 16 14 9V 12 10 7V 8 6 I C = 24A 1.4 1.3 1.2 I C = 12A 1.1 1.0 0.9 4 I C = 6A 0.8 5V 2 0.7 0 0.5 1 1.5 2 2.5 3 V CE - Volts 3.5 4 4.5 -50 5 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 8 24 TJ = 25ºC 7 21 18 I C = 24A 6 12A 6A 5 I C - Amperes VC E - Volts 15 V C E - Volts 4 3 15 12 9 TJ = 125ºC 6 2 25ºC -40ºC 3 0 1 6 7 8 9 10 11 12 V G E - Volts © 2004 IXYS All rights reserved 13 14 15 16 4 4.5 5 5.5 6 6.5 7 V G E - Volts 7.5 8 8.5 9 IXGA12N120A2 IXGP12N120A2 Fig. 8. Dependence of Turn-off Fig. 7. Transconductance Energy Loss on RG 11 18 10 16 9 14 E o f f - milliJoules g f s - Siemens 8 7 6 TJ = -40ºC 5 25ºC 4 125ºC 3 I C = 24A TJ = 25ºC 12 VGE = 15V 10 VCE = 960V 8 6 4 2 I C = 6A 2 1 0 0 0 3 6 9 12 15 18 21 24 0 27 200 400 I C - Amperes Energy Loss on IC t d ( o f f ) - microseconds E o f f - MilliJoules VCE = 960V TJ = 25ºC 8 6 4 1.8 1.5 1.2 0 0.6 12 15 I C - Amperes 18 21 0 24 Current Fall Tim e on RG 0.65 I C = 12A 0.55 VGE = 15V 0.50 VCE = 960V 0.45 TJ = 25ºC I C = 6A 0.40 0.35 Switching Time -microseconds 0.70 0.60 400 600 800 R G - Ohms 1000 Sw itching Tim e on IC 0.85 I C = 24A 0.75 200 Fig. 12. Dependence of Turn-off Fig. 11. Dependence of Turn-off 0.80 12A 24A TJ = 25ºC 2.1 0.9 9 I C = 6A VCE = 960V 2.4 2 6 VGE = 15V 2.7 VGE = 15V 10 1000 Delay Tim e on RG 3 R G =100Ω 12 800 Fig. 10. Dependence of Turn-off 16 14 600 R G - Ohms Fig. 9. Dependence of Turn-Off t f i - microseconds I C = 12A 0.80 0.75 0.70 td(off) 0.65 tfi - - - - - 0.60 R G = 100Ω 0.55 VGE = 15V VCE = 960V 0.50 TJ = 25ºC 0.45 0 200 400 600 R G - Ohms 800 1000 IXYS reserves the right to change limits, test conditions, and dimensions. 6 8 10 12 14 16 I C - Amperes 18 20 22 24 IXGA12N120A2 IXGP12N120A2 Fig. 14. Reverse-Bias Safe Operating Area Fig. 13. Gate Charge 16 30 VCE = 600V 14 12 I G = 10mA I C - Amperes VG E - Volts 25 I C = 12A 10 8 6 20 15 10 TJ = 125ºC 4 R G = 100Ω 5 2 dV/dT < 10V/ns 0 0 0 2 4 6 8 10 12 14 16 Q G - nanoCoulombs 18 20 22 100 24 300 500 700 900 1100 1300 V C E - Volts Fig. 15. Capacitance 1000 Capacitance - p F C ies 100 C oes 10 C res f = 1 MHz 1 0 5 10 15 20 25 V C E - Volts 30 35 40 Fig. 17. Maxim um Transient Therm al Resistance R ( t h ) J C - ºC / W 10.00 1.00 0.10 0.1 © 2004 IXYS All rights reserved 1 10 Pulse Width - milliseconds 100 1000