Renesas ISL25700FRUZ-TK Programmable temperature controlled mosfet driver Datasheet

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ISL25700
DATASHEET
FN6885
Rev 1.00
July 23, 2014
Programmable Temperature Controlled MOSFET Driver
Features
The Temperature Controlled MOSFET Driver is a highly
integrated solution that combines a MOSFET driver with
overcurrent protection and two 8-bit resolution DACs on a
monolithic CMOS integrated circuit (IC).
• User-programmable setpoint via I2C serial interface
• Setpoint temperature range from +40°C to +110°C
The ISL25700 sets up and monitors temperature at the point of
interest, compares it with the user programmable setpoint, and
adjusts the output until the set temperature is reached. An external
power MOSFET, a heater, an NTC thermistor and the ISL25700 are
parts of the temperature control loop.
• Operational temperature range from -40°C to +125°C
• 3°C initial setpoint accuracy
• Coarse and fine tuning setpoint control
- +15°C coarse adjustment
- +0.1°C fine adjustment
It also features programmable overcurrent protection of the
MOSFET. The current protection automatically adjusts the
output voltage in order to keep MOSFET power under user
defined limits. The protection settings always override the
temperature settings that cause violation of the current limit.
• ±0.5°C long-term drift error
• Programmable current protection of external MOSFET
• 5-bit Selectable Gain Control
There is an additional 8-bit General Purpose DAC that is
available for application specific use.
• Wide Power Supply Range: 3V to 15V
The ISL25700 can be used in a variety of applications where
constant temperature is a key parameter.
• General Purpose 8-bit DAC - 0.4% Output Resolution
• Works with 20k to 200k External NTC Thermistor
• High Reliability
- Endurance: 10,000 Data Changes per Bit per Register
- Register Data Retention: 10 years @ T  +125°C
Applications
• Oven Controlled Applications with Micro Temperature
Chamber in:
- Basestations
- Spectrometers
- Precision Meters
- Precision Generators
• 10 Lead µTQFN 2.1mmx1.6mm Package
• Pb-free (RoHS Compliant)
Related Literature
• AN1825, “Overcoming the Minimum VDD Ramp Rate
Limitation of the ISL25700”
100
TEMPERATURE (°C)
80
60
40
20
0
0
3
6
9
12
15
TIME (MINUTES)
FIGURE 1. TYPICAL TEMPERATURE SETTLING TIME
FN6885 Rev 1.00
July 23, 2014
Page 1 of 18
ISL25700
Block Diagram/Application Circuit
3V TO 15V
VDD
SCL
VOLATILE &
NON-VOLATILE
REGISTERS
I2C BUS
CONTROL
SDA
K3
R
PROGRAMMABLE
OVERCURRENT
PROTECTION
K1
8-BIT FTC
DAC
K2
REFERENCE
GENERATOR
& POWER
CIRCUITRY
RSENSE
ISENSE
C
ADJUSTABLE
SYSTEM LOOP GAIN
VREF
RTH
VOUT
PMOS
VINT
THERMISTOR
RINT
VREF
8-BIT GP
DAC
VDAC
HEATER
GND
FN6885 Rev 1.00
July 23, 2014
CCOMP
Page 2 of 18
ISL25700
Pin Configuration
ISL25700
(10 LD µTQFN)
TOP VIEW
10
NC
O
1
9 CCOMP
SCL
2
8 ISENSE
SDA
3
7 VOUT
GND
4
6 VDAC
5
VDD
RTH
Pin Descriptions
µTQFN PIN
SYMBOL
1
VDD
Power supply. This pins supplies the power necessary to operate the chip.
2
SCL
I2C interface input clock. This input is the serial clock of the I2C serial interface.
SCL requires an external pull-up resistor. It has an internal pull-down resistor of ~3MΩ to prevent a floating
input if the pin will be left unconnected.
3
SDA
Open Drain Serial Data Input/Output for the I2C interface. The SDA is a bidirectional serial data input/output
pin for I2C interface. It receives device address, operation code and data from an I2C external master device
at the rising edge of the serial clock SCL, and it shifts out data after each falling edge of the serial clock.
The SDA pin requires an external pull-up resistor. It has an internal pull-down resistor of ~3MΩ to prevent a
floating input if the pin will be left unconnected.
4
GND
Ground. Bias and reference ground of the chip.
5
RTH
External NTC thermistor. An external NTC thermistor makes one shoulder of the Wheatstone bridge and must
be connected between the RTH pin and GND.
6
VDAC
DAC Output. This is the output of the precision 8-bit DAC. Default DAC output is in the range of 0V to 2V. The
DAC output range can be extended with a gain of 2 by setting the DAC Gain bit.
7
VOUT
Output voltage that controls an external P-MOSFET. This pin drives an external P-MOSFET proportional to
unbalanced condition of the Wheatstone bridge.
8
ISENSE
Current Sense input. This pin monitors voltage drop over an external current sense resistor RSENSE. Power
dissipation of the P-MOSFET will be limited when ISENSE exceeds the voltage drop limit set in the Current
Sense Register.
9
CCOMP
Compensation capacitor. A compensation ceramic capacitor must be added between CCOMP and GND to
increase chip stability. This capacitor provides a negative feedback for the operational amplifier and its value
can be from 30pF to 1000pF.
10
NC
FN6885 Rev 1.00
July 23, 2014
DESCRIPTION
Not internally connected.
Page 3 of 18
ISL25700
Ordering Information
PART NUMBER
(Notes 1, 2, 3)
PART
MARKING
UNITS
PER REEL
TEMP RANGE
(°C)
PACKAGE
(Pb-free)
PKG.
DWG. #
ISL25700FRUZ-T
GT
3000
-40 to +125
10 Ld 2.1x1.6 µTQFN
L10.2.1x1.6A
ISL25700FRUZ-TK
GT
1000
-40 to +125
10 Ld 2.1x1.6 µTQFN
L10.2.1x1.6A
ISL25700FRUZ-T7A
GT
250
-40 to +125
10 Ld 2.1x1.6 µTQFN
L10.2.1x1.6A
NOTES:
1. Please refer to TB347 for details on reel specifications.
2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets; molding compounds/die attach materials and NiPdAu plate e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
3. For Moisture Sensitivity Level (MSL), please see device information page for ISL25700. For more information on MSL please see techbrief TB363.
FN6885 Rev 1.00
July 23, 2014
Page 4 of 18
ISL25700
Absolute Maximum Ratings
Thermal Information
Voltage at any Digital Interface Pin
with respect to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 6V
VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +16.5V
ESD Rating
Human Body Model (Tested per JESD22-A114F) . . . . . . . . . . . . . . . . 5kV
Machine Model (Tested per JESD22-A115B) . . . . . . . . . . . . . . . . . . 200V
Latchup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class II, Level A at +125°C
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
10 Ld µTQFN Package (Note 4, 5) . . . . . . .
135
75
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Maximum Junction Temperature (Plastic Package) . . . . . . . . . . . .+150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
Temperature Range (Full-range Industrial) . . . . . . . . . . . . . . . . . . . -40°C to +125°C
VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V to 15V
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
4. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
5. For JC, the “case temp” location is taken at the package top center.
Analog Specifications
Over recommended operating conditions unless otherwise stated. Boldface limits apply over the operating
temperature range, -40°C to +125°C.
SYMBOL
TSET
PARAMETER
Temperature Set Point
MIN
(Note 13)
TEST CONDITIONS
TSET must be above ambient
TYP
(Note 6)
MAX
(Note 13)
UNITS
MIN
40
°C
MAX
110
°C
Temperature Set Point Accuracy
3 sigma standard deviation
±3
°C
TSET_COARSE
Coarse Adjustment of Set Point
RTH = 100k @ +25°C,
B25/85 = 4100k (Note 14)
15
°C
TSET_FINE
Fine Adjustment of Set Point
0.1
°C
TSET_FINE_INL
(Note 9)
Fine Control Integral
Non-linearity
TSET_FINE_DNL
(Note 8)
Fine Control Differential
Non-linearity
TDRIFT
Long-term Drift of Set Point
ITH
Thermistor Current Range
NTC Thermistor Range
Resistance @ +25°C
VOUT
External P-MOSFET Gate Voltage
IOUT = 0µA
VOUT Swing @ Fixed VDD
IOUT = 0µA
IOUT
Output Current
Overcurrent Protection Set Point
±0.9
+2.5
LSB
(Note 7)
-2
±0.5
+2
LSB
(Note 7)
1000h, Reg.1 = x2h, Reg.2 = 80h,
Reg.3 = 90h
RTH
VSENSE
-2.5
±0.5
°C
25
40
55
µA
20
100
200
kΩ
VDD
V
7
µA
0.25
MIN
VDD - 2.5
VSENSE = ISENSE x RSENSE;
see Table 3
V
200 to 1750
mV
GENERAL PURPOSE DAC (MEASUREMENTS BETWEEN GND AND VDAC)
VDAC MAX
Maximum DAC Output
Using internal VREF, VDD 5V, No load,
Gain = 1
2
2.5
V
VDD > 5V, No load, Gain = 2
4
5.0
V
INL
(Note 9)
Integral Non-Linearity
No load
-1
±0.4
+1
LSB
(Note 7)
DNL
(Note 8)
Differential Non-linearity
No load
-0.75
±0.3
+0.75
LSB
(Note 7)
FN6885 Rev 1.00
July 23, 2014
Page 5 of 18
ISL25700
Analog Specifications
Over recommended operating conditions unless otherwise stated. Boldface limits apply over the operating
temperature range, -40°C to +125°C. (Continued)
SYMBOL
PARAMETER
VDAC_OFFSET
Offset
DAC register set to 0, No load
ROUT
DAC Output Impedance
PSRR
Power Supply Rejection Ratio
Temperature Coefficient
TCV
(Notes 10, 11)
TEST CONDITIONS
MIN
(Note 13)
TYP
(Note 6)
MAX
(Note 13)
0
0.2
1
UNITS
LSB
(Note 7)
350
Ω
DAC at middle scale, frequency from 0Hz
to 25kHz
-85
dB
DAC register set between 20 hex and FF
hex
±45
ppm/°C
Operating Specifications
Over the recommended operating conditions unless otherwise specified. Boldface limits apply over the
operating temperature range, -40°C to +125°C.
SYMBOL
PARAMETER
TEST CONDITIONS
IDD1
VDD Supply Current
(Non-Volatile Write/read)
fSCL = 400kHz; SDA = Open;
(for I2C, Active, Read and Write States)
IPMOS = 0mA, DAC unload
IDD2
VDD Supply Current
(Volatile Write/read)
IPMOS = 0mA, DAC unload
Leakage Current, at SDA and SCL
Pins
Voltage at pin from GND to VCC
DAC Settling Time
From bus STOP condition to VDAC change
ILkgDig
tDAC
(Note 11)
Power-On Recall Voltage
Minimum VDD at which memory recall occurs
VDD Ramp
VDD Ramp Rate
@ any level from 0V to 15V
tD
(Note 11)
Power-Up Delay
VDD above VPOR, to DAC Register recall
completed, and I2C Interface in standby state
VPOR
MIN
(Note 13)
TYP
(Note 6)
-3
2.5
0.2
MAX
(Note 13)
UNITS
4
mA
2.8
mA
3
µA
3
µs
2.9
V
50
V/ms
1
ms
EEPROM SPECIFICATIONS
EEPROM Endurance
EEPROM Retention
10,000
Cycles
Temperature +55°C
50
Years
Temperature +125°C
10
Years
2.7
SERIAL INTERFACE SPECIFICATIONS
VI2C
I2C Bus Voltage
VI2C VDD
VIL
SDA, and SCL Input Buffer LOW
Voltage
VI2C from 2.7V to 5.5V
VIH
SDA, and SCL Input Buffer HIGH
Voltage
VI2C from 2.7V to 5.5V
Hysteresis
(Note 11)
SDA and SCL Input Buffer Hysteresis
VOL
(Note 11)
SDA Output Buffer LOW Voltage,
Sinking 4mA
Cpin
(Note 11)
fSCL
5.5
V
0.8
V
1.4
V
0.05*VI2C
V
0
0.4
V
SDA, and SCL Pin Capacitance
10
pF
SCL Frequency
400
kHz
50
ns
900
ns
tIN
(Note 11)
Pulse Width Suppression Time at
SDA and SCL Inputs
tAA
(Note 11)
SCL Falling Edge to SDA Output Data SCL falling edge crossing 30% of VI2C, until
SDA exits the 30% to 70% of VI2C window
Valid
FN6885 Rev 1.00
July 23, 2014
Any pulse narrower than the max spec is
suppressed
Page 6 of 18
ISL25700
Operating Specifications
Over the recommended operating conditions unless otherwise specified. Boldface limits apply over the
operating temperature range, -40°C to +125°C. (Continued)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
(Note 13)
TYP
(Note 6)
MAX
(Note 13)
UNITS
Time the Bus Must be Free Before
the Start of a New Transmission
SDA crossing 70% of VI2C during a STOP
condition, to SDA crossing 70% of VI2C during
the following START condition
1300
ns
tLOW
Clock LOW Time
Measured at the 30% of VI2C crossing
1300
ns
tHIGH
Clock HIGH Time
Measured at the 70% of VI2C crossing
600
ns
tSU:STA
START Condition Setup Time
SCL rising edge to SDA falling edge. Both
crossing 70% of VI2C
600
ns
tHD:STA
START Condition Hold Time
From SDA falling edge crossing 30% of VI2C
to SCL falling edge crossing 70% of VI2C
600
ns
tSU:DAT
Input Data Setup Time
From SDA exiting the 30% to 70% of VI2C
window, to SCL rising edge crossing 30% of
VI2C
100
ns
tHD:DAT
Input Data Hold Time
From SCL falling edge crossing 70% of VI2C to
SDA entering the 30% to 70% of VI2C window
0
ns
tSU:STO
STOP Condition Setup Time
From SCL rising edge crossing 70% of VI2C, to
SDA rising edge crossing 30% of VI2C
600
ns
tDH
Output Data Hold Time
From SCL falling edge crossing 30% of VI2C,
until SDA enters the 30% to 70% of VI2C
window
0
ns
tR
SDA and SCL Rise Time
From 30% to 70% of VI2C
20 +
0.1 * Cb
250
ns
tF
SDA and SCL Fall Time
From 70% to 30% of VI2C
20 +
0.1 * Cb
250
ns
Capacitive Loading of SDA or SCL
Total on-chip and off-chip
10
400
SDA and SCL Bus Pull-Up Resistor
Off-Chip
Maximum is determined by tR and tF.
For Cb = 400pF, max is about 2~2.5k.
For Cb = 40pF, max is about 15~20k
1
tBUF
(Note 11)
Cb
Rpu
(Note 11)
tWC
(Notes
11, 12)
Non-Volatile Write Cycle Time
pF
k
15
20
ms
NOTES:
6. Typical values are for TA = +25°C and 12V supply voltage.
7. LSB: [VDAC255 – VDAC0]/255. VDAC255 and VDAC0 are the DAC output voltage when DAC register set to FF hex and 00 hex respectively.
8. DNL = [VDACi – VDACi-1]/LSB-1, for i = 1 to 255. i is the DAC register setting.
9. INL = [VDACi – (i • LSB + VDAC0)]/LSB for i = 1 to 255.
VDAC i  T  – VDAC i  40°C 
10 6
TC V = -------------------------------------------------------------------------  --------------------------- T – 40 °C for i = 1 to 255 decimal, T = -40°C to +125°C, referenced to 40°C.
VDAC i  40°C 
10.
11. Limits established by characterization and are not production tested.
12. tWC is the time from a valid STOP condition at the end of a Write sequence of a I2C serial interface Write operation, to the end of the self-timed internal
non-volatile write cycle. The Busy Polling method can be used to determine the end of the
non-volatile write cycle.
13. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
14. B25/85 is a thermistor material specific constant; represents the slope of the Resistance vs. Temperature curve.
FN6885 Rev 1.00
July 23, 2014
Page 7 of 18
ISL25700
SDA vs SCL Timing
tHIGH
tF
SCL
tLOW
tR
tWC
tSU:DAT
tSU:STA
tHD:DAT
tHD:STA
SDA
(INPUT TIMING)
tSU:STO
tAA
tDH
tBUF
SDA
(OUTPUT TIMING)
Typical Performance Curves
2.5
VDD = 12V
VDD = 15V
MEASURED AT RT PIN
CCOMP = 10nF
AFTER 10 MIN SETTLING TIME
MARKER = 14.6µV/√Hz
2.0
15
1.0
0.5
0.0
-40
NOISE (µV/√Hz)
IDD (mA)
1.5
VDD = 5V
VDD = 3V
-20
0
20
40
60
80
100
120
10
5
0
0.1
1.0
FREQUENCY (Hz)
10
100
TEMPERATURE (°C)
FIGURE 2. SUPPLY CURRENT IDD vs VDD
FIGURE 3. NOISE LEVEL AT RTH INPUT IN CLOSE LOOP APPLICATION
2µV/√Hz @ 1Hz
VDD = 12V
VOUT
VDAC
0.5ms/DIVISION
FIGURE 4. VOUT POWER-UP DELAY
FN6885 Rev 1.00
July 23, 2014
0.5µs/DIVISION
FIGURE 5. GP DAC SETTLING TIME (FULL SCALE, GAIN = 2)
Page 8 of 18
ISL25700
Typical Performance Curves
0.2
(Continued)
0.2
GAIN = 1
0.1
0.0
0.0
DNL (LSB)
DNL (LSB)
GAIN = 1
0.1
-0.1
-0.2
-0.1
-0.2
GAIN = 2
-0.3
0
50
100
150
200
-0.3
250
0
50
CODE (DECIMAL)
100
150
200
FIGURE 7. GP DAC DNL vs CODE VDD = 5V
FIGURE 6. GP DAC DNL vs CODE VDD = 3V
0.5
0.2
GAIN = 1
GAIN = 1
0.1
0.3
0
0.1
INL (LSB)
DNL (LSB)
250
CODE (DECIMAL)
-0.1
-0.1
-0.3
-0.2
GAIN = 2
-0.3
0
50
100
150
200
-0.5
0
250
50
CODE (DECIMAL)
100
FIGURE 8. GP DAC DNL vs CODE VDD = 15V
250
0.5
0.3
0.3
GAIN = 1
GAIN = 1
0.1
INL (LSB)
INL (LSB)
200
FIGURE 9. GP DAC INL vs CODE VDD = 3V
0.5
-0.1
-0.3
-0.5
0
150
CODE (DECIMAL)
100
150
200
CODE (DECIMAL)
FIGURE 10. GP DAC INL vs CODE VDD = 5V
FN6885 Rev 1.00
July 23, 2014
-0.1
-0.3
GAIN = 2
50
0.1
GAIN = 2
250
-0.5
0
50
100
150
200
250
CODE (DECIMAL)
FIGURE 11. GP DAC INL vs CODE VDD = 15V
Page 9 of 18
ISL25700
Typical Performance Curves
(Continued)
0.5
GAIN ERROR (%)
0.3
0.1
VDD = 15V
VDD = 5V
-0.1
-0.3
-0.5
5
55
105
155
205
255
CODE (DECIMAL)
FIGURE 12. GP DAC GAIN ERROR
Principles of Operation
The ISL25700 allows for precisely controlling the temperature
of an external object and/or power dissipation of the external
P-MOSFET. The temperature control is done by continuously
sensing resistance of the NTC thermistor, and adjusting the
current flow through the P-MOSFET (temperature controlling
element).
ISL25700 drives the P-MOSFET proportionally inverted to the
difference between the object temperature and target
temperature set point (TSET), set by the user through the I2C
serial interface. Temperature is sensed by the external NTC
thermistor and converted to a driving voltage by the
Wheatstone bridge and its amplifier. One leg of the currentmode Wheatstone bridge contains an external NTC thermistor
with the programmable 8-bit FTC DAC and another leg
contains the selectable current source k1 that feeds an
internal resistor RINT.
The 8-bit FTC DAC allows fine-tuning the TSET with resolution better
than +0.1°C within a +15°C coarse temperature range window. The
TSET temperature is set through the Temperature Coarse Range
Control Register, Reg.01h[2:0], and the Fine Temperature Control
Register, Reg.02h[7:0]; refer to “ISL25700 MEMORY MAP” on
page 11. A +15°C temperature coarse range window can be
centered on TSET point based on the thermistor’s parameters, such
as resistance, R/T curve type, tolerance and NTC slope and by
adjusting a current ratio flowing through the legs of the Wheatstone
bridge. Note that the TSET target temperature should be higher than
the anticipated maximum ambient temperature for the application.
current sensing resistor RSENSE, serial with the P-MOSFET, is
required. A current limit can be selected for the chosen RSENSE.
It should have an effective voltage drop from 200mV to
1750mV and be inside the safe operating area of the MOSFET.
A General Purpose 8-bit DAC, GP DAC provides a programmable
voltage output VDAC through the General Purpose DAC Register,
Reg.04h[7:0]. The output swing of General Purpose DAC can be set
through the Gain Control bit in Reg.03h[6] or totally disabled by
resetting the DAC Enable Bit in Reg.03h[7].
Memory Map
The are two types of memory banks in the chip; volatile (RAM)
and non-volatile (EEPROM). Volatile registers from address
00h to 07h are identical to non-volatile registers in terms of
the register’s name and bit definitions. All the data is recalled
from non-volatile registers and maintained in the volatile
registers at power-up. It is possible to do independent
write/read to the volatile and non-volatile banks after
power-up by setting NV bit in the Control/Status Register,
Reg.08h[7]. Note that the data written to the non-volatile
registers will be automatically written to corresponding volatile
registers, however no direct reading from non-volatile registers
is possible. All the readings are from corresponding volatile
registers.
The Memory Map of the chip is in Table 1.
There are total of 32 system gain settings available in the Gain
Control Register, Reg.03h[4:0], with 0.35dB resolution per
step. The gain control allows to prevent the thermal system
from oscillation by adjusting the total system gain remotely,
without use of external components.
The internal current sensing circuitry provides the ability to
control and adjust the power dissipated in the P-MOSFET
through the Current Sense Register, Reg.01h[7:3]. This
function allows for adjusting the initial turn on heating curve
and protects from over-heating of the P-MOSFET. An external
FN6885 Rev 1.00
July 23, 2014
Page 10 of 18
ISL25700
TABLE 1. ISL25700 MEMORY MAP
BIT MAP
REGISTER
ADDRESS
7
6
5
4
3
2
1
0
DEFAULT
SETTINGS
Device ID (Read Only)
00h
ID[7]
ID[6]
ID[5]
ID[4]
ID[3]
ID[2]
ID[1]
ID[0]
00h
Current Sense/
Coarse Temperature Control
01h
CS[4]
CS[3]
CS[2]
CS[1]
CS[0]
CTC[2]
CTC[1]
CTC[0]
03h
Fine Temperature Control
02h
FTC[7]
FTC[6]
FTC[5]
FTC[4]
FTC[3]
FTC[2]
FTC[1]
FTC[0]
80h
Gain Control (DAC Enable/
DAC Gain/System Loop Gain)
03h
DAC
Enable
DAC
Gain
NA
SLG[4]
SLG[3]
SLG[2]
SLG[1]
SLG[0]
90h
General Purpose DAC
04h
DAC[7]
DAC[6]
DAC[5]
DAC[4]
DAC[3]
DAC[2]
DAC[1]
DAC[0]
80h
General Purpose Register 1
05h
GP1[7]
GP1[6]
GP1[5]
GP1[4]
GP1[3]
GP1[2]
GP1[1]
GP1[0]
00h
General Purpose Register 2
06h
GP2[7]
GP2[6]
GP2[5]
GP2[4]
GP2[3]
GP2[2]
GP2[1]
GP2[0]
00h
RINT Absolute Error (Read Only)
07h
sign bit
ERR[6]
ERR[5]
ERR[4]
ERR[3]
ERR[2]
ERR[1]
ERR[0]
XX
Control/Status Register
(Volatile Only)
08h
NV
NA
NA
NA
NA
NA
NA
BUSY
00h
REGISTER NAME
–6
Device ID Register (Reg.00h)
 = 5 10
- 2nd order temperature coefficient, ppm/°C2;
This is a read only register. It contains device ID code 00h.
T - temperature in Celsius.
Coarse Temperature Control (Reg.01h [2:0])
The k1, k2 and k3 coefficients and the thermistor value range for
each Coarse Temperature setting in Reg.01h[2:0] should be
taken according to Table 2.
These 3 bits allow one to choose one of the seven coarse
windows for the temperature set point. The default set point is
about +59°C for the 100k RTH thermistor with a temperature
coefficient of -4.25%/°C at +25°C, i.e. Reg.01h[2:0] = 011b. The
temperature set point can be changed to any other set point
within an operational range from +40°C to +110°C, or use
another type of thermistor, including different resistance value or
R/T curve type (NTC slope), and then center the +15°C coarse
range temperature window on that new setting based on the
ratio of RINT/RTH according to Equation 1:
Code
K2 + K3  --------------R INT  T 
255
---------------------------------------- = -------------------------------------------R TH  setpoint 
K1
(EQ. 1)
where:
RINT - is an internal 9kΩ resistor, forming another leg of the
Wheatstone Bridge;
k1, k2 and k3 - are coefficients representing the ratio of the
current flowing through the legs of the Wheatstone Bridge;
Code - is the decimal code in the Fine Temperature Control
register 02h.
The value of internal resistor RINT can vary from part to part and
depends on the package temperature. The actual RINT at
temperature T can be calculated using Equation 2:
R INT  T  = R INT  25 x  1 +   T – 25  +   T – 25  2 
TABLE 2. COARSE TEMPERATURE RANGE
Register
01h[2:0]
k1
k2
000
k3
THERMISTOR RESISTANCE
RANGE AT SET POINT (kΩ)
Do not use
001
3
3
2
5.4 to 9.0
010
4
3
2
7.2 to 12.0
100
5
3
2
9.0 to 15.0
011
7
3
2
12.6 to 21.0
101
8
3
2
14.4 to 24.0
110
9
3
2
16.2 to 27.0
111
12
3
2
21.6 to 36.0
Current Sense Threshold (Reg.01h [7:3])
This register sets the current limit trip point. When the voltage
applied to the ISENSE pin falls below the programmed voltage
threshold, VOUT goes high, thus forming a negative feedback loop
proportional to ISENSE x RSENSE.
The value for this register should be taken according to Table 3.
(EQ. 2)
where:
RINT(25) = 9000 + RINT abs. error x 15 - is internal resistor value
at +25°C in Ohms;
RINT abs. error - is a signed integer value of absolute error stored
in Reg.07h[7:0] converted to a decimal number; bit [7]
represents a sign bit, 0 for “+” and 1 for “-”;
–6
 = – 1337 10 - 1st order temperature coefficient, ppm/°C;
FN6885 Rev 1.00
July 23, 2014
Page 11 of 18
ISL25700
System Loop Gain (Reg.03h [4:0])
TABLE 3. CURRENT SENSE THRESHOLD
This 5 bits allow one to adjust a total system loop gain in
±0.35dB per step, according to Table 4.
Register
01h[7:3]
Value
SENSE RESISTOR
VOLTAGE DROP THRESHOLD
VDD - (ISENSE X RSENSE)
VDD = 3V
VDD = 15V
00000
VDD - 200mV
±5
+20
00001
VDD - 250mV
±5
+20
00010
VDD - 300mV
±5
+20
00011
VDD - 350mV
±5
+20
Reg.03h[4:0]
LOOP GAIN ADJUSTMENT (dB)
00100
VDD - 400mV
±5
+20
00000
-5.60
00101
VDD - 450mV
±5
+20
00001
-5.25
00110
VDD - 500mV
±5
+20
00010
-4.90
00111
VDD - 550mV
±5
+20
00011
-4.55
01000
VDD - 600mV
±5
+20
00100
-4.20
01001
VDD - 650mV
±5
+20
00101
-3.85
01010
VDD - 700mV
±5
+20
00110
-3.50
01011
VDD - 750mV
±5
+20
00111
-3.15
01100
VDD - 800mV
±5
+20
01000
-2.80
01101
VDD - 850mV
±5
+20
01001
-2.45
01110
VDD - 900mV
±5
+20
01010
-2.10
01111
VDD - 950mV
±5
+20
01011
-1.75
10000
VDD - 1000mV
±5
+20
01100
-1.40
10001
VDD - 1050mV
±5
+20
01101
-1.05
10010
VDD - 1100mV
±5
+20
01110
-0.70
10011
VDD - 1150mV
±5
+20
01111
-0.35
10100
VDD - 1200mV
±5
+20
10000
Initial Gain (default)
10101
VDD - 1250mV
±5
+20
10001
0.35
10110
VDD - 1300mV
±5
+20
10010
0.70
10111
VDD - 1350mV
±5
+20
10011
1.05
11000
VDD - 1400mV
±5
+20
10100
1.40
11001
VDD - 1450mV
±5
+20
10101
1.75
11010
VDD - 1500mV
±5
+20
10110
2.10
11011
VDD - 1550mV
±5
+20
10111
2.45
11100
VDD - 1600mV
±5
+20
11000
2.80
11101
VDD - 1650mV
±5
+20
11001
3.15
11110
VDD - 1700mV
±5
+20
11010
3.50
11111
VDD - 1750mV
±5
+20
11011
3.85
11100
4.20
11101
4.55
11110
4.90
11111
5.25
TYPICAL ERROR (%)
Fine Temperature Control Register
(Reg.02h [7:0])
This register allows fine tuning to the final temperature TSET
within the predetermined range set in Reg.01h[2:0] by choosing
appropriate code for the 8-bit FTC DAC. The final temperature can
be adjusted with approximately +0.07°C increment/decrement
resolution per step.
FN6885 Rev 1.00
July 23, 2014
The default system loop gain depends on the MOSFET type,
thermal conductivity and level of insulation from the ambient
temperature.
TABLE 4. SYSTEM LOOP GAIN ADJUSTMENT
Page 12 of 18
ISL25700
DAC Enable and Gain Control (Reg.03h [7:6])
When the DAC Enable bit, Reg.03h[7], is 0, the DAC output is disabled,
regardless of Reg.04h settings. When DAC Enable bit is 1, the DAC
output depends on the settings of the DAC Gain bit Reg.03[6] and
Reg.04h[7:0].
When the DAC Gain bit, Reg.03h[6], is 0, the DAC output range is
from 0V to 2V, i.e. Gain = 1. When the DAC Gain bit is 1, the DAC
output range is from 0V to 4V, i.e. Gain = 2.
General Purpose DAC Register (Reg.04h [7:0])
This 8-bit register writes directly to the GP DAC to set the output voltage.
The default setting of this register is 80h. The DAC output depends on
the Gain setting in Reg.03h[6].
General Purpose Registers (Reg.05h and
Reg.06h)
These 8-bit General Purpose non-volatile and volatile registers
can be used for application specific purposes. For example, they
can be used to store calibration data or other valuable system
information.
RINT Absolute Error Register (Reg.07h [7:0])
This register contains the difference between the nominal value
and the real value of the internal resistor RINT. The nominal value
of this resistor is 9k and the voltage drop on this resistor
represents the temperature setpoint. The LSB weight of the RINT
absolute error is 15Ω. Refer to Equation 2 for calculation of RINT.
Control/Status Register (Reg.08h [7:0])
The setting of the NV bit, Reg.08h[7], determines if data is to be
read or written to the non-volatile and/or volatile memory. When
this bit is 0, all operation will be targeted to non-volatile memory,
and the data will be copied to volatile memory simultaneously.
When this bit is 1, all operation will be targeted to the volatile
memory only. The default setting of the NV bit is 0.
The Busy bit, Reg.08h[0], is a read only bit. When “1” is read from
this bit, it indicates that the non-volatile cycle is in progress.
Reading from this bit eliminates getting a NACK if the host
attempts to write to the non-volatile memory before the previous
data is stored.
I2C Serial Interface
The ISL25700 supports a bidirectional bus oriented protocol. The
protocol defines any device that sends data onto the bus as a
transmitter and the receiving device as the receiver. The device
controlling the transfer is a master and the device being
controlled is the slave. The master always initiates data transfers
and provides the clock for both transmit and receive operations.
Therefore, the ISL25700 operates as a slave device in all
applications.
All communication over the I2C interface is conducted by sending
the MSB of each byte of data first.
Protocol Conventions
indicating START and STOP conditions (see Figure 13). On
power-up of the ISL25700, the SDA pin is in the input mode.
All I2C interface operations must begin with a START condition,
which is a HIGH to LOW transition of SDA while SCL is HIGH. The
ISL25700 continuously monitors the SDA and SCL lines for the
START condition and does not respond to any command until this
condition is met (see Figure 13). A START condition is ignored
during the power-up sequence and during internal non-volatile
write cycles.
All I2C interface operations must be terminated by a STOP
condition, which is a LOW to HIGH transition of SDA while SCL is
HIGH (see Figure 13). A STOP condition at the end of a read
operation, or at the end of a write operation to volatile bytes, only
places the device in its standby mode. A STOP condition during a
write operation to a non-volatile byte initiates an internal nonvolatile write cycle. The device enters its standby state when the
internal non-volatile write cycle is completed.
An ACK, Acknowledge, is a software convention used to indicate
a successful data transfer. The transmitting device, either master
or slave, releases the SDA bus after transmitting 8 bits. During
the ninth clock cycle, the receiver pulls the SDA line LOW to
acknowledge the reception of the 8 bits of data (see Figure 14).
The ISL25700 responds with an ACK after recognition of a START
condition, followed by a valid Identification Byte, and once again
after successful receipt of an Address Byte. The ISL25700 also
responds with an ACK after receiving a Data Byte of a write
operation. The master must respond with an ACK after receiving
a Data Byte of a read operation.
A valid Identification Byte contains 0101000 in seven MSBs. The LSB is
the Read/Write bit. Its value is “1” for a Read operation and “0” for a
Write operation (see Table 5).
TABLE 5. IDENTIFICATION BYTE FORMAT
0
1
0
1
(MSB)
0
0
0
R/W
(LSB)
Write Operation
A Write operation requires a START condition, followed by a valid
Identification Byte, a valid Address Byte, a Data Byte, and a STOP
condition. After each of the three bytes, the ISL25700 responds with
an ACK. At this time, if the Data Byte is to be written only to volatile
registers, then the device enters its standby state. If the Data Byte is
to be written also to non-volatile memory, the ISL25700 begins its
internal write cycle to non-volatile memory. During the internal nonvolatile write cycle, the device ignores transitions at the SDA and
SCL pins, and the SDA output is at a high impedance state. When
the internal non-volatile write cycle is completed, the ISL25700
enters its standby state (see Figure 14).
The byte at address 08h determines if the Data Byte is to be
written to volatile and/or non-volatile memory (see “Memory
Map” on page 10). A 20ms delay is required between two
consecutive writes to the non-volatile registers.
Data states on the SDA line can change only during SCL LOW
periods. The SDA state changes during SCL HIGH are reserved for
FN6885 Rev 1.00
July 23, 2014
Page 13 of 18
ISL25700
SCL
SDA
START
DATA
STABLE
DATA
CHANGE
DATA
STABLE
STOP
FIGURE 13. VALID DATA CHANGES, START, AND STOP CONDITIONS
SCL FROM
MASTER
1
8
9
SDA OUTPUT FROM
TRANSMITTER
HIGH IMPEDANCE
HIGH IMPEDANCE
SDA OUTPUT
FROM RECEIVER
START
ACK
FIGURE 14. ACKNOWLEDGE RESPONSE FROM RECEIVER
WRITE
SIGNALS
FROM THE
MASTER
SIGNAL AT
SDA
S
T
A IDENTIFICATION
R
BYTE
T
ADDRESS
BYTE
0 1 0 1 0 0 0 0
SIGNALS
FROM THE
ISL25700
S
T
O
P
DATA
BYTE
0 0 0 0
A
C
K
A
C
K
A
C
K
FIGURE 15. BYTE WRITE SEQUENCE
SIGNALS
FROM THE
MASTER
S
T
A IDENTIFICATION
R
BYTE WITH
T
R/W = 0
SIGNAL AT
SDA
SIGNALS
FROM THE
SLAVE
0 1 0 1 0 0 0 0
S
T
A IDENTIFICATIO
R N BYTE WITH
T
R/W = 1
ADDRESS
BYTE
A
C
K
S
T
O
P
A
C
K
0 1 0 1 0 0 0 1
0 0 0 0
A
C
K
READ
A
C
K
A
C
K
FIRST READ
DATA BYTE
LAST READ
DATA BYTE
FIGURE 16. READ SEQUENCE
FN6885 Rev 1.00
July 23, 2014
Page 14 of 18
ISL25700
Polling Method
Current Sense Resistor and MOSFET Selection
It is possible to check if the non-volatile memory write cycle is
finished or is in progress by polling (reading) the BUSY bit in
Control/Status Register, Reg.08h[0] (see “Control/Status
Register (Reg.08h [7:0])” on page 13). The non-volatile write
cycle is in progress when the BUSY bit is 1. No other write
attempt is allowed when the BUSY bit is 1. The non-volatile write
cycle is finished when the BUSY bit is 0.
The current sense resistor should be selected with consideration
of system maximum power consumption, maximum current, and
minimum resolution. It is recommended to select a current
sense resistor in the range from 0.1Ω to 10Ω. The 0.1Ω resistor
allows sensing and will limit the maximum current from 2A to
17.5A, while a 10Ω resistor allows selecting a current limit from
20mA to 175mA. The type and size of current sense resistor
should have an appropriate power rating.
Read Operation
A Read operation consists of a three byte instruction followed by
one or more Data Bytes (see Figure 16). The master initiates the
operation issuing the following sequence: a START, the
Identification byte with the R/W bit set to “0”, an Address Byte, a
second START, and a second Identification byte with the R/W bit
set to “1”. After each of the three bytes, the ISL25700 responds
with an ACK. Then the ISL25700 then transmits the Data Byte.
The master then terminates the read operation (issuing a STOP
condition) following the last bit of the Data Byte (see Figure 16).
The byte at address 08h determines if the Data Bytes being read
are from volatile or non-volatile memory (see “Memory Map” on
page 10).
Application Information
In order to get the correct temperature setting, it is very
important to chose an appropriate thermistor and calibrate the
complete system. The following sequence describes the
thermistor selection and calibration procedure.
1. Select a thermistor type and get the RT curve from
manufacturer.
2. Find out a thermistor resistance at the desired temperature
and select the coarse temperature range from Table 2. The
thermistor value at set point should be in the middle of the
coarse range. Note, the coarse ranges overlap.
3. Set the Current Sense limit in Reg.01h[7:3] and System Loop
Gain in Reg. 03h[4:0] as high as possible to enable fast
settling yet prevent thermal oscillation.
The ISL25700 will work only with the P-type of power MOSFETs or
Darlington pair. Since the driving capability is limited, it is not
recommended to drive a bipolar transistor. The power MOSFET
can be used as a heater inside a micro temperature chamber.
System Loop Gain Setting
Assemble the application circuit including ISL25700, the power
MOSFET, heating element and thermistor. The System Loop Gain
allows controlling thermal stability of the feedback system. In
other words, current through the power MOSFET should settle
fast and without oscillation when setpoint changes from one
temperature to another. Settling time of the current can be
monitored by oscilloscope with the current probe.
Another way to determine system stability is to obtain a phase
margin of the system by analyzing Bode plots. Bode plots of the
gain and phase margins can be obtained by disconnecting the
thermistor from RTH - breaking the loop, and connecting a low
frequency signal analyzer between the RTH pin and the
thermistor. That will allow analysis of the system transfer
function vs. frequency. Note the thermistor has to be biased with
30µA DC current from an external supply. The signal analyzer
sweeps the frequency at input node (RTH) and measures the
phase change of the output node (thermistor). As a rule of
thumb, phase margin should be at least 45° when the system
gain reaches 0dB.
It is not recommended to change the system loop gain when it is
determined.
4. Perform system calibration and fine tuning using an external
temperature sensor.
Thermistor Selection
Chose the thermistor whose resistance at the desired
temperature set point TSET will be within the range specified in
Table 2. The R/T characteristics of the thermistor are usually
provided by the manufacturer as a table or as a curve.
For example, you are going to stabilize the temperature at
TSET = +91.5°C. You decided to use a 100k NTC thermistor from
Vishay, NTCS0805E3104FXT. The resistance at +91.5°C will be
8109.12Ω, according to the manufacturer data provided online at
http://www.vishay.com/doc?29100. This resistance fits in the
coarse temperature range settings of 001b or 002b, as per Table 2.
FN6885 Rev 1.00
July 23, 2014
Page 15 of 18
ISL25700
Calibration Procedure
Power-up the circuit and program Reg.01h[2:0] = 001b of
ISL25700. Use an externally calibrated temperature sensor to
measure the temperature of the thermistor. When the thermistor
temperature is stabilized, it can be adjusted to the desired point
by changing the Fine Temperature Control settings in
Reg.02h[7:0] until the external thermometer indicates +91.5°C
(for this example).
The decimal FTC code can be calculated by solving for Equations
1 and 2 as follows:
K1  R INT  T  – K2  R TH  T 
Code = -----------------------------------------------------------------------------  255
K3  R TH  T 
(EQ. 3)
Note, the final application system temperature depends on the
allowed power consumption and the level of insulation from the
ambient temperature.
Two different calibration point settings can be stored in General
Purpose non-volatile registers. More calibrated temperature
points can be stored and used as a look-up table in an external
memory.
Placement and Layout Consideration
It is recommended to place the ISL25700 and thermistor as
close as possible to each other, inside the insulated area to
achieve higher accuracy and keep the ground trace between the
thermistor and the device as short as possible. The device ground
pin and the system ground should be connected at a single point,
known as the “single point ground”, preventing picking up the
common ground noise into the RTH feedback pin.
The ISL25700 also can be placed outside of the insulated area
and far away from the thermistor, but the setpoint accuracy will
decrease, due to the wide ambient temperature range. It is
recommended to use a look-up table based on Equation 2 to
compensate for the setpoint shift.
Put a 1µF capacitor in parallel with 0.1µF decoupling capacitor
close to the VDD pin.
It is recommended to have a pull-up resistor of 500k or higher, or
a high-pass RC filter, as shown in the “Block
Diagram/Application Circuit” on page 2, to the gate of a
P-MOSFET in order to prevent a high current spike through the
MOSFET at power-up. The time constant of the high-pass filter
should be in the range of 1µs to 20µs.
FN6885 Rev 1.00
July 23, 2014
Page 16 of 18
ISL25700
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to web to make sure you
have the latest Rev.
DATE
REVISION
CHANGE
July 23, 2014
FN6885.1
Added Related Literature on page 1.
Operating Specification table on “Voltage at pin from GND to VCC” on page 6: Changed the value for Min from -2 to
-3 and Max from 2 to 3.
September 3, 2010
FN6885.0
Initial release.
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Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such
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FN6885 Rev 1.00
July 23, 2014
Page 17 of 18
ISL25700
Package Outline Drawing
L10.2.1x1.6A
10 LEAD ULTRA THIN QUAD FLAT NO-LEAD PLASTIC PACKAGE
Rev 5, 3/10
8.
PIN 1
INDEX AREA
2.10
A
B
PIN #1 ID
1
0.05 MIN.
1
8.
4
4X 0.20 MIN.
1.60
0.10 MIN.
10
5
0.80
10X 0.40
0.10
6
9
2X
6X 0.50
10 X 0.20 4
TOP VIEW
0.10 M C A B
M C
BOTTOM VIEW
(10 X 0.20)
SEE DETAIL "X"
(0.05 MIN)
PACKAGE
OUTLINE
1
MAX. 0.55
0.10 C
(10X 0.60)
C
(0.10 MIN.)
(2.00)
SEATING PLANE
0.08 C
SIDE VIEW
(0.80)
(1.30)
C
0 . 125 REF
(6X 0.50 )
(2.50)
0-0.05
TYPICAL RECOMMENDED LAND PATTERN
DETAIL "X"
NOTES:
FN6885 Rev 1.00
July 23, 2014
1.
Dimensioning and tolerancing conform to ASME Y14.5M-1994.
2.
All Dimensions are in millimeters. Angles are in degrees.
Dimensions in ( ) for Reference Only.
3.
Unless otherwise specified, tolerance : Decimal ± 0.05
4.
Lead width dimension applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
5.
Maximum package warpage is 0.05mm.
6.
Maximum allowable burrs is 0.076mm in all directions.
7.
Same as JEDEC MO-255UABD except:
No lead-pull-back, MIN. Package thickness = 0.45 not 0.50mm
Lead Length dim. = 0.45mm max. not 0.42mm.
8.
The configuration of the pin #1 identifier is optional, but must be located within
the zone indicated. The pin #1 identifier may be either a mold or mark feature.
Page 18 of 18
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