NS ESIG t D NE W ter a ® FOR ort Cen /tsc D E p D om l Sup M EN sil.c COM echnica w.inter E R NOT act our T IL or ww cont -IN TERS 8 1-88 HA-5004/883 100MHz Current Feedback Amplifier July 1998 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-5004/883 current feedback amplifier is a video/wideband amplifier optimized for low gain applications. The design is based on current-mode feedback which allows the amplifier to achieve higher closed loop bandwidth than voltage-mode feedback operational amplifiers. Since feedback is employed, the HA-5004/883 can offer better gain accuracy and lower distortion than open loop buffers. Unlike conventional op amps, the bandwidth and rise time of the HA-5004/883 are nearly independent of closed loop gain. The 100MHz bandwidth at unity gain reduces to only 65MHz at a gain of 10. The HA-5004/883 may be used in place of a conventional op amp with a significant improvement in speed power product. • Slew Rate . . . . . . . . . . . . . . . . . . . . . . 1000V/µs (Min) 1200V/µs (Typ) • Output Current . . . . . . . . . . . . . . . . . . . . ±80mA (Min) ±100mA (Typ) • Drives . . . . . . . . . . . . . . . . . . . ±8.0V into 100Ω (Min) ±9.5V into 100Ω (Typ) • VSUPPLY . . . . . . . . . . . . . . . . . . . . . . . . . ±5V to ±18V Several features have been designed in for added value. A thermal overload feature protects the part against excessive junction temperature by shutting down the output. If this feature is not needed, it can be inhibited via a TTL input (TOI). A TTL chip enable/disable (OE) input is also provided; when the chip is disabled its output is high impedance. Finally, an open collector output flag (TOL) is provided to indicate the status of the chip. The status flag goes low to indicate when the chip is disabled due to either the internal Thermal Overload shutdown or the external disable. • Thermal Overload Protection and Output Flag • Bandwidth Nearly Independent of Gain • Output Enable/Disable Applications • Unity Gain Video/Wideband Buffer • Video Gain Block • High Speed Peak Detector In order to maximize bandwidth and output drive capacity, internal current limiting is not provided. However, current limiting may be applied via the VC + and VC - pins which provide power separately to the output stage. • Fiber Optic Transmitters • Zero Insertion Loss Transmission Line Drivers • Current to Voltage Converter Ordering Information • Radar Systems PART NUMBER HA1-5004/883 TEMP. RANGE (oC) -55 to +125 PACKAGE 14 Lead CerDIP Pinout HA-5004/883 (CERDIP) TOP VIEW VC + 1 14 V C OUT 2 13 V- +BAL 3 -BAL 4 V+ 5 + 12 FB 11 IN 10 TOL TOI 6 9 GND 7 8 NC OE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © Harris Corporation 1998 1 511053-883 File Number 3706.1 Spec Number HA-5004/883 Absolute Maximum Ratings Thermal Information Voltage between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VPeak Output Current Pulsed at 1ms ≤ 10% Duty Cycle . . . . ±300mA Continuous Output Current. . . . . . . . . . . . . . . . . . . . . . . . .±120mA rms Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC θJC Thermal Resistance θJA CerDIP Package . . . . . . . . . . . . . . . . . . . 73oC/W 18oC/W Package Power Dissipation Limit at +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.37W Package Power Dissipation Derating Factor Above +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . ±12V to ±15V RL ≥ 100Ω TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: V+ = VC+ = +15V, V- = VC - = -15V, R L = 100Ω, AV = +1, RF = 250Ω, OE = 0.8V, TOI = 0.8V or 2.0V, Unless Otherwise Specified. LIMITS PARAMETERS Input Offset Voltage Input Bias Current DC Gain Error (Small Signal) DC Gain Error (Large Signal) SYMBOL VIO +IB SSGE LSGE1 LSGE2 DC Voltage Gain DC Transimpedance Output Voltage Swing AV AR ±VOUT1 ±VOUT2 Output Current ±IOUT CONDITIONS GROUP A SUBGROUP TEMPERATURE MIN MAX UNITS 1 +25oC -2.5 2.5 mV 2, 3 +125oC, -55oC -20 20 mV 1 +25oC -5 5 µA 2, 3 +125oC, -55oC -20 20 µA 1 +25oC - 0.43 % 2, 3 +125oC, -55oC - 0.75 % 1 +25oC - 0.43 % 2, 3 +125oC, -55oC - 0.75 % 1 +25oC - 0.43 % 2, 3 +125oC, -55oC - 0.75 % 1 +25oC 233 - V/V 2, 3 +125oC, -55oC 133 - V/V 1 +25oC 58 - V/mA 2, 3 +125oC, -55oC 33 - V/mA 1 +25oC 11.5 -11.5 V 2, 3 +125oC, -55oC 10.5 -10.5 V 1 +25oC 9.0 -9.0 V 2, 3 +125oC, -55oC 8.0 -8.0 V 1 +25oC 90 -90 mA 2, 3 +125oC, -55oC 80 -80 mA VIN = 0V VIN = 0V (Note 1) VIN = ±100mV, RL = 100Ω VIN = ±5.0V, RL = 1kΩ VIN = ±10V, RL = 1kΩ For All Gain Error Conditions (Note 2) For All Gain Error Conditions (Note 3) VIN = ±15V, RL = 1kΩ VIN = ±10V, RL = 100Ω VIN = ±10V, RL = 100Ω 2 HA-5004/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: V+ = VC+ = +15V, V- = VC - = -15V, R L = 100Ω, AV = +1, RF = 250Ω, OE = 0.8V, TOI = 0.8V or 2.0V, Unless Otherwise Specified. LIMITS PARAMETERS SYMBOL Logic Input Voltage VIH MIN MAX UNITS 1 +25oC 2.0 - V 2, 3 +125oC, -55oC 2.0 - V 1 +25oC - 0.8 V 2, 3 +125oC, -55oC - 0.8 V 1 +25oC 50 - dB 2, 3 +125oC, -55oC 50 - dB 1 +25oC 50 - dB 2, 3 +125oC, -55oC 50 - dB 1 +25oC - 16 mA 2, 3 +125oC, -55oC - 22 mA 1 +25oC -16 - mA 2, 3 +125oC, -55oC -22 - mA Pins OE, TOI PSRR1 PSRR2 Power Supply Current TEMPERATURE Pins OE, TOI (Note 4) VIL Power Supply Rejection Ratio CONDITIONS GROUP A SUBGROUP +ICC -ICC V+ = +10V, +20V V- = -15V V- = -10V, -20V V+ = +15V VIN = 0V, RL = 1kΩ VIN = 0V, RL = 1kΩ NOTES: 1. Inverting (FB) input is a low impedance point; Bias Current and Offset Current are not specified for this terminal. 2. DC Voltage Gain = 1 --------------------------Gain Error , for all Gain Error conditions. R F --------------------------- , RF = 250Ω, for all Gain Error conditions. Gain Error 4. Please refer to the Truth Table in the Applications Information section. 3. DC Transimpedance = TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Table 2 Intentionally Left Blank. See AC Specifications in Table 3 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: V+ = VC+ = +15V, V- = VC - = -15V, R L = 1kΩ , AV = +1, R F = 250Ω, CL ≤ 10pF, OE = 0.8V, TOI = 0.8V or 2.0V, Unless Otherwise Specified. LIMITS PARAMETERS Slew Rate Rise and Fall Time Full Power Bandwidth SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS +SR VOUT = 0V to +10V 1, 2 +25oC 1000 - V/µs -SR VOUT = 0V to -10V 1, 2 +25oC 1000 - V/µs TR VOUT = 0V to +200mV, 1, 2 +25oC - 7.0 ns TF VOUT = 0V to -200mV 1, 2 +25oC - 7.0 ns VPEAK = 2V 1, 3 +25oC 79.5 - MHz FPBW 3 HA-5004/883 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized at: V+ = VC+ = +15V, V- = VC - = -15V, R L = 1kΩ , AV = +1, R F = 250Ω, CL ≤ 10pF, OE = 0.8V, TOI = 0.8V or 2.0V, Unless Otherwise Specified. LIMITS PARAMETERS SYMBOL Quiescent Power Consumption PC CONDITIONS VIN = 0V NOTES TEMPERATURE MIN MAX UNITS 1, 4 -55oC to +125oC - 660 mW NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. Measured between 10% and 90% points. 3. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK). 4. Power Consumption based upon Quiescent Supply Current test maximum. TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLE 1) Interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1 (Note 1), 2, 3 Group A Test Requirements 1, 2, 3 Groups C & D Endpoints 1 NOTE: 1. PDA applies to Subgroup 1 only. 4 HA-5004/883 Die Characteristics WORST CASE CURRENT DENSITY: 6.6 x 104A/cm 2 DIE DIMENSIONS: 63 x 93 x 19 mils ± 1 mils 1600 x 2370 x 483µm ± 25.4µm SUBSTRATE POTENTIAL (Powered Up): VEE TRANSISTOR COUNT: 64 METALLIZATION: Type: Al, 1% Cu Thickness: 16kÅ ± 2kÅ PROCESS: Bipolar Dielectric Isolation GLASSIVATION: Type: Nitride (Si3N4) over (Silox, 5% Phos.) Silox Thickness: 12kÅ ± 2kÅ Nitride Thickness: 3.5kÅ ± 1.5kÅ Metallization Mask Layout HA-5004/883 OE TOI GND TOL V+ IN -BAL FB +BAL V- VC- VC+ 5 OUT