1/4 ◇STRUCTURE Silicon Monolithic Integrated Circuit ◇PRODUCT SPI BUS 128Kbit (16,384×8bit) EEPROM ◇PART NUMBER BR35H128-WC Series PART NUMBER BR35H128F-WC BR35H128FJ-WC ◇FEATURES PACKAGE SOP8 SOP-J8 Serial Peripheral Interface Single power supply (2.5V～5.5V) 1,000,000 erase/write cycles endurance（85℃） 500,000 erase/write cycles endurance（105℃） 300,000 erase/write cycles endurance（125℃） ◇ABSOLUTE MAXIMUM RATING (Ta=25℃) Parameter Symbol Supply Voltage Vcc Rating －0.3～6.5 560 (BR35H128F-WC) Power Dissipation Pd 560 (BR35H128FJ-WC) Storage Temperature Tstg －65～150 Operating Temperature Topr －40～125 Terminal Voltage － －0.3～Vcc+0.3 ※Degradation is done at 4.5mW/℃(※1,2) for operation above 25℃. ◇RECOMMENDED OPERATING CONDITION Parameter Symbol Supply Voltage Vcc Input Voltage VIN Rating 2.5～5.5 0～Vcc REV. B Unit V Unit V ※1 ※2 mW ℃ ℃ V 2/4 ◇MEMORY CELL CHARACTERISTICS(Vcc=2.5～5.5V) Specification Parameter Write/Erase Cycle Data Retention Test Condition Unit Min. Typ. Max. 1,000,000 - - Cycle Ta≦85℃ 500,000 - - Cycle Ta≦105℃ 300,000 - - Cycle Ta≦125℃ 40 - - Year Ta≦25℃ 20 - - Year Ta≦125℃ *1 *1 ○Initial Data：Memory array FFh *1 Not 100% TESTED ◇DC OPERATING CHARACTERISTICS ◇AC OPERATING CHARACTERISTICS (Unless otherwise specified Ta=-40～125℃, CL=100pF) (Unless otherwise specified Ta=-40～125℃, Vcc=2.5～5.5V) Parameter Symbol Specification Min. Typ. Max. Unit test condition Parameter Symbol 2.5V≦VCC≦5.5V Min. Typ. Max. Unit “H” Input Voltage VIH1 0.7xVcc － Vcc+0.3 V 2.5V≦Vcc≦5.5V SCK clock Frequency fSCK － － 5 “L” Input Voltage VIL1 -0.3 － 0.3xVcc V 2.5V≦Vcc≦5.5V SCK High Time tSCKWH 85 － － MHz ns “L” Output Voltage VOL 0 － 0.4 V IOL=2.1mA (Vcc=2.5V～5.5V) SCK Low Time tSCKWL 85 － － ns “H” Output Voltage V IOH=-0.4mA (Vcc=2.5V～5.5V) ns VOH Vcc-0.5 － Vcc CS High Time tCS 85 － － Input Leakage Current ILI -10 － 10 μA VIN=0V～Vcc CS Setup Time tCSS 90 － － ns Output Leakage Current ILO -10 － 10 μA VOUT=0V～Vcc , CSB=Vcc CS Hold Time tCSH 85 － － ns ICC1 － － 2.5 mA ICC2 － － 5.5 mA ICC3 － － 1.5 mA Operating Current Write Operating Current Read Vcc=2.5V , fSCK=5MHz , tE/W=5ms SCK Setup Time tSCKS 90 － － ns Byte Write，Page Write SCK Hold Time tSCKH 90 － － ns Vcc=5.5V , fSCK=5MHz , tE/W=5ms SI Setup Time tDIS 20 － － ns Byte Write，Page Write SI Hold Time tDIH 30 － － ns Vcc=2.5V , fSCK=5MHz Output Data Delay Time1 tPD1 - － 70 ns Read，Read Status Register Output Data Delay Time2 (CL=30pF) tPD2 - － 55 ns Vcc=5.5V , fSCK=5MHz Output Hold Time tOH 0 － － ns Read，Read Status Register Output Disable Time tOZ - － 100 ns ICC4 － － 2 mA ISB － － 10 μA CSB=Vcc Vcc=5.5V Standby Current SCK=SI=Vcc or GND, SO=OPEN ○This product is not designed for protection against ○radioactive rays. SCK Rise Time *1 tRC － － 1 μs SCK Fall Time *1 tFC － － 1 μs Output Rise Time *1 tRO － － 50 ns Output Fall Time *1 tFO － － 50 ns tE/W － － 5 ms Write Cycle Time ※1 Not 100% TESTED ◇ BLOCK DIAGRAM CSB ◇PIN No. / PIN NAME 1 8 VCC VOLTAGE INSTRUCTION DECODE DETECTION CONTROL CLOCK GENERATION SO 2 WRITE HIGH VOLTAGE INHIBITION GENERATOR 7 NC INSTRUCTION REGISTER NC 3 STATUS REGISTER ADDRESS REGISTER 14bit ADDRESS 6 SCK 14bit DECODER 131,072bit EEPROM READ/WRITE DATA GND 4 REGISTER 8bit 8bit AMP Fig.1 BLOCK DIAGRAM REV. B 5 SI PIN No. 1 2 3 4 5 6 7 8 PIN NAME CSB SO NC GND SI SCK NC VCC 3/4 ◇NOTES FOR POWER SUPPLY In order to prevent an inadvertent write, the device has the feature of P.O.R. After the power is on, the device is in the write disable mode. P.O.R. works only during power up. The noise may force the device write enable mode with CSB=“H” during power ON/OFF. In the case of power up, keep the following conditions to ensure to make the function of P.O.R. tR ◇ RECOMMENDED CONDITIONS OF tR, tOFF, Vbot Vcc tOFF Vbot tR tOFF Vbot Below 10ms Above 10ms Below 0.3V Below 100ms Above 10ms Below 0.2V 0 Fig.2 Vcc Waveform Please keep CSB “H” during power ON/OFF. The device is an active state during CSB is low. The extraordinary function or data collaption may occur because of noise etc., if power-up is done with CSB “L”. In order to prevent above errors from happening, keep CSB “H” (=Vcc) during power ON. (The device does not receive any command during CSB is high.) It may continue at low Vcc by capacitance of Vcc line during power off. Please keep CSB “H” during power off because of the device may make malfunction and inadvertent write. （Good example） CSB follows Vcc. (CSB is pull up to Vcc) Ｖｃｃ Ｖｃc ＧＮＤ Ｖｃｃ ＣＳＢ ＧＮＤ Good Bad （Bad example） CSB is low during power ON/OFF. Please take more than 10ms between power ON and power OFF, or the internal circuit is not always reset. Fig.3 CS TIMING DURING POWER ON/OFF ◇CAUTIONS ON USE (1) Absolute maximum ratings If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded, LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that conditions exceeding the absolute maximum ratings should not be impressed to LSI. (2) GND electric potential Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltages is lower than that of GND terminal. (3) Heat design In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin. (4) Terminal to terminal shortcircuit and wrong packaging When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may destruct LSI. And in the case of shortcircuit between LSI terminals and terminals and power source, terminal and GND owing to foreign matter, LSI may be destructed. (5) Strong electromagnetic field Use in a strong electromagnetic field may cause malfunction, therefore, evaluated design sufficiently. REV. B 4/4 ◇PHYSICAL DIMENSION Product Name：BR35H128F-WC Product Name：BR35H128FJ-WC Max5.25 (incrude.BURR) 128H 128H LOT No. LOT No. Drawing No. : EX111-5002 Drawing No. : EX112-6001 Fig.4-(a) PHYSICAL DIMENSION SOP8 Fig.4-(b) PHYSICAL DIMENSION SOP-J8 (BR25S128F-WC) (BR25S128FJ-WC) REV. B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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