EC736007 -50V、 、-130mA P-Channel MOSFET Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance. These features combine to make this design an extremely efficient and reliable device for use in line current interrupter in telephone sets and a wide variety of other applications Features and Benefits: Advanced MOSFET process technology Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 6007 150℃ operating temperature Main Product Characteristics VDSS -50V RDS(on) 2.1ohm(typ.) ID -130mA Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS ESD TJ TSTG SOT-23 Marking and assigment Schematic diagram (TA=25℃unless otherwise noted) Parameter Continuous Drain Current, V GS @ -10V① Continuous Drain Current, VGS @ -10V① Pulsed Drain Current② Power Dissipation ③ Drain-Source Voltage Gate-to-Source Voltage ESD Rating (HBM module) Operating Junction and Storage Temperature Range Max. -130 -100 -520 230 -50 ± 20 1 Units -55 to + 150 °C mA mW V V KV Thermal Resistance Symbol RθJA Characterizes Junction-to-ambient(t≤10s) ④ Junction-to-Ambient (PCBmounted, steady-state) ④ E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 5 Typ. — — Max. 556 540 Units ℃/W ℃/W 5D16-Rev.F001 -50V、 、-130mA P-Channel MOSFET EC736007 Electrical Characteristics (TA=25℃ ℃ unless otherwise noted) Symbol V(BR)DSS RDS(on) VGS(th) Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Min. -50 — -0.8 — Typ. — 2.1 — — — — — 50 — — — — — — — — — — — 45 18 11 3.1 1.3 18 7.5 IDSS IGSS gfs Ciss Coss Crss td(on) tr td(off) tf Gate-to-Source forward leakage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Max. — 7 -2 -0.1 -1 -50 10 -10 — — — — — — — — Units V Ω V Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=-130mA, VGS=0V µA uA S pF ns Conditions VGS = 0V, ID = -10µA VGS=-10V,ID = -130mA VDS = VGS, ID = -1mA VDS =-40V,VGS = 0V VDS =-50V,VGS = 0V TJ = 125°C VGS =20V VGS = -20V VDS =-25 V ,ID =-130m A VGS = 0; VDS = -5 V; f = 1 MHz VDD = –15V; ID = –2.5 A; RL = 50ohm Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Min. Typ. Max. Units — — 130 mA — — 520 mA — — -1.3 V Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C E-CMOS Corp. (www.ecmos.com.tw) Page 2 of 5 5D16-Rev.F001 -50V、 、-130mA P-Channel MOSFET EC736007 Typical Electrical and Thermal Characteristics E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 5 5D16-Rev.F001 -50V、 、-130mA P-Channel MOSFET EC736007 Ordering and Marking Information EC736007 XX X R： ：Tape & Reel B1＝ ＝SOT23 3L E-CMOS Corp. (www.ecmos.com.tw) Part Number Package EC736007B1R SOT23-3L Page 4 of 5 Marking 5D16-Rev.F001 -50V、 、-130mA P-Channel MOSFET EC736007 SOT23-3L Package Outline Dimension E-CMOS Corp. (www.ecmos.com.tw) Page 5 of 5 5D16-Rev.F001