ON MBR7030WT Switchmode power rectifier Datasheet

MBR7030WT
SWITCHMODEt
Power Rectifier
The SWITCHMODE power rectifier, a state−of−the−art device,
employs the use of the Schottky Barrier principle with a Platinum
barrier metal.
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Features
• Dual Diode Construction; Terminals 1 and 3 May Be Connected for
•
•
•
•
•
SCHOTTKY BARRIER
RECTIFIER
70 AMPERES, 30 VOLTS
Parallel Operation at Full Rating
30 V Blocking Voltage
Low Forward Voltage Drop
Guardring for Stress Protection and High dv/dt Capability
175°C Operating Junction Temperature
Pb−Free Package is Available*
1
2, 4
Mechanical Characteristics
3
• Case: Epoxy, Molded. Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 4.3 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• ESD Ratings: Machine Model, B (< 400 V)
1
Human Body Model, 3B (> 8000 V)
2
TO−247
CASE 340L
STYLE 2
3
MAXIMUM RATINGS
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
30
V
Average Rectified Forward Current
(Rated VR, TC = 100°C)
Per Leg
Per Device
IF(AV)
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz, TC = 100°C)
IFRM
70
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
500
A
Peak Repetitive Reverse Current
(2.0 ms, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Tstg
−55 to +175
°C
Operating Junction Temperature (Note 1)
TJ
−55 to +175
°C
dv/dt
10,000
V/ms
Voltage Rate of Change (Rated VR)
A
35
70
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 3
MARKING DIAGRAM
1
MBR7030WT
AYWWG
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
MBR7030WT
MBR7030WTG
Package
Shipping
TO−247
30 Units/Rail
TO−247
(Pb−Free)
30 Units/Rail
Publication Order Number:
MBR7030WT/D
MBR7030WT
THERMAL CHARACTERISTICS (Per Diode)
Rating
Thermal Resistance,
Junction−to−Case
Symbol
Max
Unit
RqJC
0.55
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode)
Instantaneous Forward Voltage (Note 2)
@ IF = 35 Amps, TC = 25°C
@ IF = 70 Amps, TC = 25°C
@ IF = 35 Amps, TC = 100°C
VF
Instantaneous Reverse Current (Note 2)
@ Rated DC Voltage, TC = 25°C
@ Rated DC Voltage, TC = 100°C
IR
V
0.55
0.72
0.52
mA
5.0
250
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2.0%
1000
100
IR, REVERSE CURRENT (mA)
IF, INSTANTANEOUS FORWARD CURRENT (A)
TYPICAL CHARACTERISTICS
TJ = 150°C
10
TJ = 100°C
TJ = 25°C
1
0.1
TJ = −55°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
100
TJ = 100°C
1
0.1
TJ = 25°C
0.01
TJ = −55°C
0.001
0.0001
0.8
TJ = 150°C
10
0
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
5
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
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2
25
30
MBR7030WT
PF(AV), AVERAGE POWER DISSIPATION (WATTS)
80
70
DC
60
50
40
SQUARE WAVE
30
20
10
0
100
110
120
130
140
150
160
TC, CASE TEMPERATURE (°C)
Figure 3. Current Derating (Case)
45
40
35
SQUARE
WAVE
30
25
20
DC
15
10
5
0
0
10
20
8000
7000
6000
5000
4000
3000
2000
1000
0
5
10
15
20
25
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
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3
40
50
60
Figure 4. Forward Power Dissipation (Per Leg)
9000
0
30
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
10000
C, CAPACITANCE (pF)
IF(AV), AVERAGE FORWARD CURRENT (A)
TYPICAL CHARACTERISTICS
30
MBR7030WT
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE E
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
F 2 PL
W
J
H
G
D 3 PL
0.25 (0.010)
M
Y Q
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
STYLE 2:
PIN 1.
2.
3.
4.
S
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
ANODE
CATHODE (S)
ANODE 2
CATHODES (S)
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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4
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MBR7030WT/D
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