May 1994 NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 26 and 24A, 100V. RDS(ON) = 0.065 and 0.080Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted NDP610A NDP610AE NDB610A NDB610AE Symbol Parameter NDP610B NDP610BE NDB610B NDB610BE Units VDSS Drain-Source Voltage 100 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) 100 V VGSS Gate-Source Voltage - Continuous ±20 V - Nonrepetitive (tP < 50 µs) ±40 V ID Drain Current - Continuous - Pulsed PD 26 24 A 104 96 A Total Power Dissipation @ TC = 25°C 100 W Derate above 25°C 0.67 W/°C -65 to 175 °C 275 °C TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds © 1997 Fairchild Semiconductor Corporation NDP610.SAM Electrical Characteristics (T Symbol Parameter C = 25°C unless otherwise noted) Conditions Type Min Typ Max Units 250 mJ 26 A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) EAS Single Pulse Drain-Source Avalanche Energy VDD = 25 V, ID = 26 A IAR Maximum Drain-Source Avalanche Current NDP610AE NDP610BE NDB610AE NDB610BE OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ALL IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V ALL IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR Gate - Body Leakage, Reverse 100 V 250 µA 1 mA ALL 100 nA VGS = -20 V, VDS = 0 V ALL -100 nA VDS = VGS, ID = 250 µA ALL TJ = 125°C ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 10 V, ID = 13 A VGS = 10 V, ID = 12 A ID(on) gFS On-State Drain Current Forward Transconductance TJ = 125°C 2 3 4 V 1.4 2.3 3.2 V 0.048 0.065 Ω 0.086 0.13 Ω 0.08 Ω 0.16 Ω NDP610A NDP610AE NDB610A TJ = 125°C NDB610AE NDP610B NDP610BE NDB610B TJ = 125°C NDB610BE VGS = 10 V, VDS = 10 V NDP610A NDP610AE NDB610A NDB610AE 26 A NDP610B NDP610BE NDB610B NDB610BE 24 A VDS = 10 V, ID = 13 A ALL 10 VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL 1430 1800 pF ALL 280 500 pF ALL 85 200 pF 16 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance NDP610.SAM Electrical Characteristics (T Symbol Parameter C = 25°C unless otherwise noted) Conditions Type Min Typ Max Units SWITCHING CHARACTERISTICS (Note 2) tD(ON) Turn - On Delay Time tr Turn - On Rise Time tD(OFF) VDD = 50 V, ID = 26 A, VGS = 10 V, RGEN = 7.5 Ω ALL 11 20 nS ALL 72 120 nS Turn - Off Delay Time ALL 40 65 nS tf Turn - Off Fall Time ALL 52 85 nS Qg Total Gate Charge ALL 47 65 nC Qgs Gate-Source Charge ALL 8 nC Qgd Gate-Drain Charge ALL 22 nC VDS = 80 V, ID = 26 A, VGS = 10V DRAIN-SOURCE DIODE CHARACTERISTICS IS ISM VSD Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 13 A trr Reverse Recovery Time Irr Reverse Recovery Current VGS = 0 V, IS = 26 A, dIS/dt = 100 A/µs (Note 2) NDP610A NDP610AE NDB610A NDB610AE 26 A NDP610B NDP610BE NDB610B NDB610BE 24 A NDP610A NDP610AE NDB610A NDB610AE 104 A NDP610B NDP610BE NDB610B NDB610BE 96 A ALL 0.88 1.3 V 0.83 1.2 V ALL 108 155 ns ALL 7.4 11 A TJ = 125°C THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case ALL 1.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient ALL 62.5 °C/W Notes: 1. NDP610A/610B and NDB610A/610B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP610.SAM Typical Electrical Characteristics 70 2.5 12 V GS = 5V 10 60 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) V GS = 20V 8.0 50 7.0 40 30 6.0 20 5.0 10 0 0 2 4 6 V DS , DRAIN-SOURCE VOLTAGE (V) 6.0 2 8.0 10 12 1.5 20 1 0.5 8 7.0 0 60 70 V GS = 10V V GS = 10V R DS(on), NORMALIZED 2 1.5 1 -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (°C) 150 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED 30 40 50 , DRAIN CURRENT (A) 4 I D = 13A 3 TJ = 125°C 2 25°C 1 -55°C 0 175 0 20 J Figure 3. On-Resistance Variation with Temperature. 40 I D , DRAIN CURRENT (A) 60 80 Figure 4. On-Resistance Variation with Drain Current and Temperature. 1.2 TJ = -55°C 25 V DS = 10V 125 Vth , NORMALIZED 30 20 10 0 2 3 4 5 6 7 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 8 GATE-SOURCE THRESHOLD VOLTAGE (V) 40 ID , DRAIN CURRENT (A) D Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2.5 DRAIN-SOURCE ON-RESISTANCE 20 I Figure 1. On-Region Characteristics. 0.5 -50 10 V DS = V 1.1 GS I D = 250µA 1 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 175 Figure 6. Gate Threshold Variation with Temperature. NDP610.SAM Typical Electrical Characteristics (continued) 30 I D = 250µA V GS = 0V 10 I , REVERSE DRAIN CURRENT (A) 1.1 1.05 1 0.95 TJ = 125°C 25°C 0.1 0.9 -50 -25 0 25 50 75 100 125 T J , JUNCTION TEMPERATURE (°C) 150 175 0.01 0.2 Figure 7. Breakdown Voltage Variation with Temperature. V DS = 20V I D = 26A , GATE-SOURCE VOLTAGE (V) C iss 1000 C oss 300 200 50 0.1 C rss 50 80 15 10 5 GS f = 1 MHz V V GS = 0 V 0 0.2 0.5 V DS 1 2 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 0 50 Figure 9. Capacitance Characteristics. 20 t on t d(on) 60 80 t off tr RL VIN 40 Q g , GATE CHARGE (nC) Figure 10. Gate Charge Characteristics. VDD t d (off) tf 90% 90% V OUT D VGS 1.2 20 2000 100 0.4 0.6 0.8 1 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 3000 CAPACITANCE (pF) -55°C 1 S BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE (V) 1.15 VOUT R GEN 10% 10% DUT G INVERTED 90% S V IN 50% 50% 10% PULSE W IDTH Figure 36. Switching Test Circuit. Figure 12. Switching Waveforms. NDP610.SAM Typical Electrical Characteristics (continued) VDS = 10V L V GS = 10V T J = -55°C + tp 20 V DD - 25°C 15 t p is adjusted to reach 125°C the desired peak inductive current, I L . 10 BV DSS tp 5 IL V DD g FS , TRANSCONDUCTANCE (SIEMENS) 25 0 0 5 10 15 20 ID , DRAIN CURRENT (A) 25 30 Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. Unclamped Inductive Load Circuit and Waveforms. 200 100 I D , DRAIN CURRENT (A) 50 RD S (O Lim N) 10 it 10 1m 10 10 0µ µs s s ms 10 0m DC s 5 V GS = 20V SINGLE PULSE 2 T C = 25°C 1 0.5 1 2 3 5 10 20 50 VDS , DRAIN-SOURCE VOLTAGE (V) 100 150 Figure 15. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.5 0.3 R θJC (t) = r(t) * RθJC R θJC = 1.5 °C/W 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 0.03 t1 0.02 0.01 0.02 0.01 0.01 0.02 0.05 t2 TJ - T C = P * R θ JC (t) Duty Cycle, D = t 1 /t2 Single Pulse 0.1 0.2 0.5 1 2 5 t1 ,TIME (ms) 10 20 50 100 200 500 1000 Figure 16. Transient Thermal Response Curve. NDP610.SAM