ETC2 AUIRFP2907Z Ultra low on-resistance Datasheet

PD - 97550
AUIRFP2907Z
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
●
●
●
●
●
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●
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V(BR)DSS
75V
RDS(on) max.
G
S
4.5mΩ
ID
170A
D
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
G
D
S
TO-247AC
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
c
EAS (tested)
IAR
EAR
TJ
TSTG
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value i
Avalanche Current c
Repetitive Avalanche Energy h
A
680
Linear Derating Factor
Gate-to-Source Voltage
Units
170
120
IDM
Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
VGS
EAS
Max.
d
Operating Junction and
310
W
2.0
± 20
W/°C
V
520
mJ
690
See Fig.12a,12b,15,16
A
mJ
°C
-55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Typ.
Max.
Units
–––
0.49
°C/W
Case-to-Sink, Flat, Greased Surface
0.24
–––
Junction-to-Ambient
–––
40
RθJC
Junction-to-Case
RθCS
RθJA
j
Parameter
300
10 lbf•in (1.1N•m)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
08/13/2010
AUIRFP2907Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
75
–––
–––
2.0
180
–––
–––
–––
–––
–––
0.069
3.5
–––
–––
–––
–––
–––
–––
–––
–––
4.5
4.0
–––
20
250
200
-200
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 90A
V VDS = VGS, ID = 250µA
S VDS = 25V, ID = 90A
µA VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
180
46
65
19
140
97
100
5.0
270
–––
–––
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
13
–––
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
7500
970
510
3640
650
1020
–––
–––
–––
–––
–––
–––
nC
ns
nH
Conditions
ID = 90A
VDS = 60V
VGS = 10V
VDD = 38V
ID = 90A
RG = 2.5Ω
VGS = 10V
Between lead,
f
f
D
6mm (0.25in.)
from package
pF
G
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
90
ISM
(Body Diode)
Pulsed Source Current
–––
–––
680
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
41
59
1.3
61
89
c
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C,
L=0.13mH, RG = 25Ω, IAS = 90A, VGS =10V.
Part not recommended for use above this value.
ƒ ISD ≤ 90A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
„ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
2
Conditions
MOSFET symbol
A
V
ns
nC
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 90A, VGS = 0V
TJ = 25°C, IF = 90A, VDD = 38V
di/dt = 100A/µs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS.
† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡ This value determined from sample failure population,
starting TJ = 25°C, L=0.13mH, RG = 25Ω, IAS = 90A, VGS =10V.
ˆ Rθ is measured at TJ of approximately 90°C.
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AUIRFP2907Z
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
TO-247
MSL1
Class M4 (425V)
AEC-Q101-002
ESD
Human Body Model
Class H2 (4000V)
AEC-Q101-001
Charged Device
Model
RoHS Compliant
Class C5 (1125V)
AEC-Q101-005
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRFP2907Z
1000
10000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
100
4.5V
10
4.5V
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
0.1
1
10
10
0.1
100
Fig 1. Typical Output Characteristics
100
200
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (Α)
10
Fig 2. Typical Output Characteristics
1000
T J = 175°C
100
10
T J = 25°C
1
VDS = 25V
≤60µs PULSE WIDTH
0.1
2
4
6
8
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
T J = 25°C
150
T J = 175°C
100
50
V DS = 10V
380µs PULSE WIDTH
0
10
0
25
50
75
100
125
150
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
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nce
AUIRFP2907Z
100000
12.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
ID= 90A
10000
Ciss
Coss
Crss
1000
VDS= 60V
VDS= 38V
10.0
VGS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
C oss = C ds + C gd
VDS= 15V
8.0
6.0
4.0
2.0
100
0.0
1
10
100
0
VDS, Drain-to-Source Voltage (V)
100
150
200
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
50
1000
T J = 175°C
100
TJ = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10
1msec
1
VGS = 0V
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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2.5
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRFP2907Z
175
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
ID, Drain Current (A)
150
125
100
75
50
25
0
ID = 90A
VGS = 10V
2.0
1.5
1.0
0.5
25
50
75
100
125
150
-60 -40 -20 0
175
T C , Case Temperature (°C)
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
τJ
SINGLE PULSE
( THERMAL RESPONSE )
R1
R1
τJ
τ1
τ1
R2
R2
τ2
R3
R3
τ3
τ2
Ci= τi/Ri
Ci i/Ri
τC
τ
τ3
Ri (°C/W)
0.1224
τi (sec)
0.000360
0.1238
0.001463
0.2433
0.021388
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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1
AUIRFP2907Z
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
VGS
20V
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
EAS , Single Pulse Avalanche Energy (mJ)
2500
15V
ID
16A
25A
BOTTOM 90A
TOP
2000
1500
1000
500
tp
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
4.0
Charge
Fig 13a. Basic Gate Charge Waveform
L
DUT
0
1K
Fig 13b. Gate Charge Test Circuit
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VCC
VGS(th) Gate threshold Voltage (V)
VG
3.5
3.0
2.5
ID = 250µA
2.0
1.5
1.0
-75 -50 -25
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
7
AUIRFP2907Z
Avalanche Current (A)
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses
100
0.01
0.05
0.10
10
1
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
600
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 90A
500
400
300
200
100
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
175
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRFP2907Z
D.U.T
Driver Gate Drive
ƒ
+
‚
-
P.W.
+
„
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
V DD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
*

RG
D=
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
Period
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
*
ISD
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRFP2907Z
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Part Number
AUFP2907Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFP2907Z
Ordering Information
Base part
AUIRFP2907Z
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Package Type
TO-247
Standard Pack
Form
Tube
Complete Part Number
Quantity
25
AUIRFP2907Z
11
AUIRFP2907Z
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other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
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IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
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