PD - 97550 AUIRFP2907Z AUTOMOTIVE GRADE HEXFET® Power MOSFET Features ● ● ● ● ● ● ● D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS 75V RDS(on) max. G S 4.5mΩ ID 170A D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G D S TO-247AC G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V c EAS (tested) IAR EAR TJ TSTG Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value i Avalanche Current c Repetitive Avalanche Energy h A 680 Linear Derating Factor Gate-to-Source Voltage Units 170 120 IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation VGS EAS Max. d Operating Junction and 310 W 2.0 ± 20 W/°C V 520 mJ 690 See Fig.12a,12b,15,16 A mJ °C -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torque, 6-32 or M3 screw Thermal Resistance Typ. Max. Units ––– 0.49 °C/W Case-to-Sink, Flat, Greased Surface 0.24 ––– Junction-to-Ambient ––– 40 RθJC Junction-to-Case RθCS RθJA j Parameter 300 10 lbf•in (1.1N•m) HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 08/13/2010 AUIRFP2907Z Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 75 ––– ––– 2.0 180 ––– ––– ––– ––– ––– 0.069 3.5 ––– ––– ––– ––– ––– ––– ––– ––– 4.5 4.0 ––– 20 250 200 -200 Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 90A V VDS = VGS, ID = 250µA S VDS = 25V, ID = 90A µA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V f Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance ––– ––– ––– ––– ––– ––– ––– ––– 180 46 65 19 140 97 100 5.0 270 ––– ––– ––– ––– ––– ––– ––– LS Internal Source Inductance ––– 13 ––– Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance ––– ––– ––– ––– ––– ––– 7500 970 510 3640 650 1020 ––– ––– ––– ––– ––– ––– nC ns nH Conditions ID = 90A VDS = 60V VGS = 10V VDD = 38V ID = 90A RG = 2.5Ω VGS = 10V Between lead, f f D 6mm (0.25in.) from package pF G S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 60V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 90 ISM (Body Diode) Pulsed Source Current ––– ––– 680 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time ––– ––– ––– ––– 41 59 1.3 61 89 c Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L=0.13mH, RG = 25Ω, IAS = 90A, VGS =10V. Part not recommended for use above this value. ISD ≤ 90A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. 2 Conditions MOSFET symbol A V ns nC showing the integral reverse p-n junction diode. TJ = 25°C, IS = 90A, VGS = 0V TJ = 25°C, IF = 90A, VDD = 38V di/dt = 100A/µs f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25°C, L=0.13mH, RG = 25Ω, IAS = 90A, VGS =10V. Rθ is measured at TJ of approximately 90°C. www.irf.com AUIRFP2907Z Qualification Information† Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-247 MSL1 Class M4 (425V) AEC-Q101-002 ESD Human Body Model Class H2 (4000V) AEC-Q101-001 Charged Device Model RoHS Compliant Class C5 (1125V) AEC-Q101-005 Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRFP2907Z 1000 10000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 100 4.5V 10 4.5V ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 175°C Tj = 25°C 1 0.1 1 10 10 0.1 100 Fig 1. Typical Output Characteristics 100 200 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current (Α) 10 Fig 2. Typical Output Characteristics 1000 T J = 175°C 100 10 T J = 25°C 1 VDS = 25V ≤60µs PULSE WIDTH 0.1 2 4 6 8 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) T J = 25°C 150 T J = 175°C 100 50 V DS = 10V 380µs PULSE WIDTH 0 10 0 25 50 75 100 125 150 ID,Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com nce AUIRFP2907Z 100000 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd ID= 90A 10000 Ciss Coss Crss 1000 VDS= 60V VDS= 38V 10.0 VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) C oss = C ds + C gd VDS= 15V 8.0 6.0 4.0 2.0 100 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 100 150 200 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 50 1000 T J = 175°C 100 TJ = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100µsec 10 1msec 1 VGS = 0V 1 10msec Tc = 25°C Tj = 175°C Single Pulse 0.1 0.0 0.5 1.0 1.5 2.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 2.5 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRFP2907Z 175 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 ID, Drain Current (A) 150 125 100 75 50 25 0 ID = 90A VGS = 10V 2.0 1.5 1.0 0.5 25 50 75 100 125 150 -60 -40 -20 0 175 T C , Case Temperature (°C) 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 0.001 τJ SINGLE PULSE ( THERMAL RESPONSE ) R1 R1 τJ τ1 τ1 R2 R2 τ2 R3 R3 τ3 τ2 Ci= τi/Ri Ci i/Ri τC τ τ3 Ri (°C/W) 0.1224 τi (sec) 0.000360 0.1238 0.001463 0.2433 0.021388 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com 1 AUIRFP2907Z DRIVER L VDS D.U.T RG + V - DD IAS VGS 20V tp A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS , Single Pulse Avalanche Energy (mJ) 2500 15V ID 16A 25A BOTTOM 90A TOP 2000 1500 1000 500 tp 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD 4.0 Charge Fig 13a. Basic Gate Charge Waveform L DUT 0 1K Fig 13b. Gate Charge Test Circuit www.irf.com VCC VGS(th) Gate threshold Voltage (V) VG 3.5 3.0 2.5 ID = 250µA 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 14. Threshold Voltage vs. Temperature 7 AUIRFP2907Z Avalanche Current (A) 1000 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 100 0.01 0.05 0.10 10 1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 600 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 90A 500 400 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 8 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav www.irf.com AUIRFP2907Z D.U.T Driver Gate Drive + - P.W. + D.U.T. ISD Waveform Reverse Recovery Current + V DD • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - Period + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * ISD VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRFP2907Z TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Part Number AUFP2907Z YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRFP2907Z Ordering Information Base part AUIRFP2907Z www.irf.com Package Type TO-247 Standard Pack Form Tube Complete Part Number Quantity 25 AUIRFP2907Z 11 AUIRFP2907Z IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. 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