CHENMKO ENTERPRISE CO.,LTD CHT3019ZPT SURFACE MOUNT NPN Switching Transistor VOLTAGE 80 Volts CURRENT 1 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-73/SOT-223 * Suitable for high packing density. * High saturation current capability. * Voltage controlled small signal switch. 1.65+0.15 6.50+0.20 0.90+0.05 3.00+0.10 2.0+0.3 3.5+0.2 * NPN Switching Transistor 7.0+0.3 CONSTRUCTION 0.70+0.10 BCP56 0.9+0.2 2.0+0.3 MARKING 0.70+0.10 2.30+0.1 0.27+0.05 0.01~0.10 0.70+0.10 4.60+0.1 1 1 Base CIRCUIT 3 2 2 Emitter C (3) 3 Collector ( Heat Sink ) (1) B E(2) SC-73/SOT-223 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 120 VCEO collector-emitter voltage open base − 80 V VEBO emitter-base voltage open collector − 7.0 V IC collector current (DC) − 1000 mA ICM peak collector current − 1500 − 2.0 W Tamb ≤ 25 °C; note 1 V mA Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 RATING CHARACTERISTIC CURVES ( CHT3019ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 357 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 90 V − 10 nA IEBO emitter cut-off current IC = 0; VEB = 5 V − 10 nA hFE DC current gain IC = 0.1 mA; V CE = 10V IC = 1.0 mA; VCE = 10V 50 90 IC = 150 mA; VCE =10V 100 IC = 500 mA; VCE = 10V IC = 1.0 A; VCE = 10V 50 15 collector-emitter saturation voltage IC = 150 mA; IB = 15 m A − 0.2 V IC =-500 mA; IB = 50 m A − 0.5 V VBEsat base-emitter saturation voltage IC =150 mA; IB =15 mA − 1.1 V Cob collector capacitance − 12 pF C ib emitter capacitance IC = ic = 0; VBE = 500 mV; f = 1 MHz − 60 pF fT transition frequency IC = 50 mA; VCE = 1 0 V; f = 1.0 MHz 100 F noise Þgure IC = 100 µA; VCE = 1 0 V; RS = 1 kΩ; − f = 1.0kHz VCEsat IE = ie = 0; VCB = 1 0 V; f = 1 MHz − − 300 − − − 4.0 MHz dB