MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™P6 600VCoolMOS™P6PowerTransistor IPx60R600P6 DataSheet Rev.2.2 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 1Description D²PAK CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. TO-220 TO-220FP tab tab 2 1 3 DPAK tab 1 2 3 Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 600 mΩ Qg.typ 12 nC ID,pulse 18 A Eoss@400V 1.8 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package IPB60R600P6 PG-TO 263 IPP60R600P6 PG-TO 220 IPA60R600P6 PG-TO 220 FullPAK IPD60R600P6 PG-TO 252 Final Data Sheet Marking 6R600P6 2 RelatedLinks see Appendix A Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Final Data Sheet 3 Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 7.3 4.6 A TC=25°C TC=100°C - 18 A TC=25°C - - 133 mJ ID=1.3A; VDD=50V; see table 12 EAR - - 0.20 mJ ID=1.3A; VDD=50V; see table 12 Avalanche current, repetitive IAR - - 1.3 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO-220, TO-252, TO-263 Ptot - - 63 W TC=25°C Power dissipation (FullPAK) TO-220FP Ptot - - 28 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque (Non FullPAK) TO-220 - - - 60 Ncm M3 and M3.5 screws Mounting torque (FullPAK) TO-220FP - - - 50 Ncm M2.5 screws Continuous diode forward current IS - - 6.3 A TC=25°C Diode pulse current IS,pulse - - 18 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 10 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 10 Insulation withstand voltage for TO-220FP VISO - - 2500 V Vrms,TC=25°C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 2) 1) Limited by Tj max. Maximum duty cycle D=0.75 Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 4 Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 3Thermalcharacteristics Table3Thermalcharacteristics(NonFullPAK)TO-220 Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 2 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 °C 1.6mm (0.063 in.) from case for 10s Unit Note/TestCondition Tsold Table4Thermalcharacteristics(FullPAK)TO-220FP Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 4.5 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 °C 1.6mm (0.063 in.) from case for 10s Unit Note/TestCondition Tsold Table5ThermalcharacteristicsTO-252,TO-263 Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 2 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient RthJA for SMD version - 35 45 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area °C/W for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave & reflow soldering allowed - - 260 °C Final Data Sheet Tsold 5 reflow MSL1 Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table6Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 4.0 4.5 V VDS=VGS,ID=0.2mA - 10 1 - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.540 1.404 0.600 - Ω VGS=10V,ID=2.4A,Tj=25°C VGS=10V,ID=2.4A,Tj=150°C Gate resistance RG - 11 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3.5 Zero gate voltage drain current IDSS Gate-source leakage current Table7Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 557 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 28 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 23 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 88 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 11 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω;seetable11 Rise time tr - 7 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω;seetable11 Turn-off delay time td(off) - 33 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω;seetable11 Fall time tf - 14 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω;seetable11 Unit Note/TestCondition Table8Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 3 - nC VDD=400V,ID=3A,VGS=0to10V Gate to drain charge Qgd - 5 - nC VDD=400V,ID=3A,VGS=0to10V Gate charge total Qg - 12 - nC VDD=400V,ID=3A,VGS=0to10V Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=3A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 6 Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Table9Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=3A,Tj=25°C 196 - ns VR=400V,IF=3A,diF/dt=100A/µs; see table 10 - 1.7 - µC VR=400V,IF=3A,diF/dt=100A/µs; see table 10 - 17 - A VR=400V,IF=3A,diF/dt=100A/µs; see table 10 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 7 Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPAK) Diagram2:Powerdissipation(FullPAK) 70 30 60 25 50 40 Ptot[W] Ptot[W] 20 30 15 10 20 5 10 0 0 25 50 75 100 125 0 150 0 25 50 TC[°C] 75 100 125 150 TC[°C] Ptot=f(TC) Ptot=f(TC) Diagram3:Max.transientthermalimpedance(NonFullPAK) Diagram4:Max.transientthermalimpedance(NonFullPAK) 1 101 10 0.5 100 0.5 100 0.1 ZthJC[K/W] ZthJC[K/W] 0.2 0.1 0.05 0.02 10-1 0.05 0.02 10-1 0.01 0.01 single pulse 10-2 0.2 10-5 single pulse 10-4 10-3 10-2 10-1 10-2 10-5 10-4 10-3 tp[s] 10-1 100 101 tp[s] ZthJC=f(tP);parameter:D=tp/T Final Data Sheet 10-2 ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Diagram5:Safeoperatingarea(NonFullPAK) Diagram6:Safeoperatingarea(FullPAK) 102 102 1 µs 1 µs 101 101 10 µs 10 µs 100 µs 100 µs 1 ms 100 1 ms 100 10 ms ID[A] ID[A] 10 ms DC 10-1 DC 10-1 10-2 10-2 10-3 10-3 100 101 102 10-4 103 100 101 102 VDS[V] VDS[V] ID=f(VDS);TC=25°C;D=0;parameter:tp ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram7:Safeoperatingarea(NonFullPAK) Diagram8:Safeoperatingarea(FullPAK) 2 103 102 10 1 µs 101 1 µs 101 10 µs 100 µs 10 µs 100 µs 100 10 ms ID[A] 10 ms ID[A] 1 ms 100 1 ms DC 10-1 DC 10-1 10-2 10-2 10-3 10-3 100 101 102 103 10-4 100 101 102 VDS[V] VDS[V] ID=f(VDS);TC=80°C;D=0;parameter:tp ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 9 103 Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Diagram9:Typ.outputcharacteristics Diagram10:Typ.outputcharacteristics 20 12 20 V 10 V 20 V 10 V 8V 15 9 8V 10 ID[A] ID[A] 7V 7V 6 6V 5 3 5.5 V 6V 5V 5.5 V 0 5V 4.5 V 0 5 10 15 0 20 4.5 V 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram11:Typ.drain-sourceon-stateresistance Diagram12:Drain-sourceon-stateresistance 5.0 1.50 1.40 4.5 1.30 1.20 4.0 1.10 1.00 3.0 5.5 V 6V 6.5 V 7V 2.5 RDS(on)[Ω] RDS(on)[Ω] 3.5 10 V 0.80 typ 98% 0.70 0.60 2.0 20 V 0.50 1.5 0.40 0.30 1.0 0.5 0.90 0.20 0 5 10 15 0.10 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=2.4A;VGS=10V 10 Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Diagram13:Typ.transfercharacteristics Diagram14:Typ.gatecharge 20 10 9 25 °C 8 15 120 V 7 480 V VGS[V] ID[A] 6 10 150 °C 5 4 3 5 2 1 0 0 2 4 6 8 10 0 12 0 3 VGS[V] 6 9 12 15 125 150 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=3.0Apulsed;parameter:VDD Diagram15:Forwardcharacteristicsofreversediode Diagram16:Avalancheenergy 2 10 140 120 100 IF[A] 125 °C EAS[mJ] 101 25 °C 80 60 100 40 20 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=1.3A;VDD=50V 11 Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Diagram17:Drain-sourcebreakdownvoltage Diagram18:Typ.capacitances 104 700 680 660 103 Ciss 620 C[pF] VBR(DSS)[V] 640 600 102 Coss 580 101 560 540 Crss 520 -75 -50 -25 0 25 50 75 100 125 150 175 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=1MHz Diagram19:Typ.Cossstoredenergy 3.0 2.5 Eoss[µJ] 2.0 1.5 1.0 0.5 0.0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 12 Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 6TestCircuits Table10Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table11Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table12Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 13 ID VDS Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 7PackageOutlines Figure1OutlinePG-TO263,dimensionsinmm/inches Final Data Sheet 14 Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Figure2OutlinePG-TO220,dimensionsinmm/inches Final Data Sheet 15 Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 DIM A A1 A2 b b1 b2 b3 b4 c D D1 E e e1 N H L L1 Q MILLIMETERS MIN MAX 4.50 4.90 2.34 2.85 2.86 2.42 0.65 0.90 0.95 1.38 0.95 1.51 0.65 1.38 0.65 1.51 0.40 0.63 15.67 16.15 8.97 9.83 10.00 10.65 2.54 (BSC) INCHES MIN 0.177 0.092 0.095 0.026 0.037 0.037 0.026 0.026 0.016 0.617 0.353 0.394 DOCUMENT NO. Z8B00003319 SCALE 0 2.5 0 2.5 5mm EUROPEAN PROJECTION 0.100 (BSC) 5.08 3 28.70 12.78 2.83 2.95 3.15 MAX 0.193 0.112 0.113 0.035 0.054 0.059 0.054 0.059 0.025 0.636 0.387 0.419 0.200 3 29.75 13.75 3.45 3.38 3.50 1.130 0.503 0.111 0.116 0.124 1.171 0.541 0.136 0.133 0.138 ISSUE DATE 05-05-2014 REVISION 04 Figure3OutlinePG-TO220FullPAK,dimensionsinmm/inches Final Data Sheet 16 Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Figure4OutlinePG-TO252,dimensionsinmm/inches Final Data Sheet 17 Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 8AppendixA Table13RelatedLinks • IFXCoolMOSTMP6Webpage:www.infineon.com • IFXCoolMOSTMP6applicationnote:www.infineon.com • IFXCoolMOSTMP6simulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 18 Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 RevisionHistory IPB60R600P6, IPP60R600P6, IPA60R600P6, IPD60R600P6 Revision:2015-07-10,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2013-12-05 Release of final version 2.1 2013-12-05 Release of multi-package datasheet 2.2 2015-07-10 PG-TO 263 package added WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 19 Rev.2.2,2015-07-10