Preliminary Technical Information IXFN220N20X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 G S 200V 160A 6.2m RDS(on) D N-Channel Enhancement Mode Avalanche Rated = = miniBLOC, SOT-227 E153432 S S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 200 200 V V VGSS VGSM Continuous Transient 20 30 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 160 500 A A IA EAS TC = 25C TC = 25C 110 2.5 A J PD TC = 25C 390 W dv/dt IS IDM, VDD VDSS, TJ 150°C 20 V/ns -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg VISOL Md 50/60 Hz, RMS IISOL 1mA t = 1 minute t = 1 second S D G = Gate S = Source Features Mounting Torque Terminal Connection Torque Weight D = Drain International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Avalanche Rated Low RDS(on) Advantages Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 200 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 110A, Note 1 V Applications 4.5 V 100 nA 10 A 1 mA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 5.2 Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 6.2 m DS100828B(9/17) IXFN220N20X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 60A, Note 1 70 RGi Gate Input Resistance Ciss Coss SOT-227B (IXFN) Outline 120 S 1.6 13.6 nF 2.2 nF 9.0 pF 1000 3250 pF pF 37 ns VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 85A RG = 5(External) Qg(on) Qgs 27 ns 155 ns 17 ns 204 nC 65 nC 47 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 85A Qgd (M4 screws (4x) supplied) 0.32 C/W RthJC RthCS C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 220 A ISM Repetitive, Pulse Width Limited by TJM 880 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM 128 IF = 110A, -di/dt = 100A/s 580 VR = 100V, VGS = 0V ns nC 9 A Note 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN220N20X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 220 900 VGS = 10V VGS = 10V 8V 200 800 180 600 140 I D - Amperes I D - Amperes 9V 700 7V 160 120 100 6V 80 8V 500 400 7V 300 60 200 40 5V 20 6V 100 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 VDS - Volts 220 2.8 VGS = 10V 8V 2.4 140 RDS(on) - Normalized 160 I D - Amperes 30 VGS = 10V 7V 180 6V 120 100 80 60 2.0 I D = 220A 1.6 I D = 110A 1.2 5V 40 0.8 20 4V 0.4 0 0 4.0 0.5 1 1.5 2 2.5 -50 3 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 110A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 BVDSS / VGS(th) - Normalized 3.5 RDS(on) - Normalized 25 Fig. 4. RDS(on) Normalized to ID = 110A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 200 20 VDS - Volts o 3.0 TJ = 125 C 2.5 2.0 o TJ = 25 C 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 0.7 VGS(th) 0.6 0.5 0.5 0 100 200 300 400 500 600 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 700 800 900 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFN220N20X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 350 180 160 300 140 250 I D - Amperes I D - Amperes 120 100 80 60 200 150 o TJ = 125 C o 100 25 C o - 40 C 40 50 20 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 6.0 6.5 7.0 7.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 320 5.5 VGS - Volts 600 o TJ = - 40 C 280 500 240 400 I S - Amperes g f s - Siemens o 25 C 200 o 160 125 C 120 300 200 o TJ = 125 C 80 100 40 0 o TJ = 25 C 0 0 40 80 120 160 200 240 280 320 360 400 0.2 440 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 100V Capacitance - PicoFarads I D = 110A 8 I G = 10mA 7 VGS - Volts 1.0 VSD - Volts I D - Amperes 6 5 4 3 2 Ciss 10,000 1,000 Coss 100 Crss 10 f = 1 MHz 1 0 1 0 20 40 60 80 100 120 140 160 180 200 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFN220N20X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 18 1000 RDS(on) Limit 16 25μs 100 100μs 12 I D - Amperes E OSS - MicroJoules 14 10 8 6 10 1ms 1 4 o TJ = 150 C 10ms o TC = 25 C Single Pulse 2 0 DC 0.1 0 40 80 120 160 200 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: F_220N20X3(28-S202) 4-26-17