ON LM4040BTB-330GT3 Precision micro-power shunt voltage reference Datasheet

LM4040, LM4041
Precision Micro-Power
Shunt Voltage References
Description
LM4040 and LM4041 are precision two−terminal shunt mode
voltage references offered in factory programmed reverse breakdown
voltages of 1.225 V, 2.500 V, 3.000 V, 3.300 V, 4.096 V, and 5.000 V.
ON Semiconductor’s Charge Programmable floating gate
technology ensures precise voltage settings offering five grades of
initial accuracy; from 0.1% to 2%.
LM4040 and LM4041 operate over a shunt current range of 60 mA
to 15 mA with low dynamic impedance, and 100 ppm/°C temperature
coefficient ensuring stable reverse breakdown voltage accuracy over a
wide range of operating conditions.
These shunt regulators do not require an external stabilizing
capacitor but are stable with any capacitive load (up to 1 mF).
Offered in space saving SOT−23 and SC−70 packages LM4040 and
LM4041 are specified for operation over the full industrial
temperature range of −40°C to +85°C.
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SOT−23 3 Lead
TB SUFFIX
CASE 527AG
SC−70 5 Lead
SD SUFFIX
CASE 419AC
MARKING DIAGRAMS
4xA
G
4xYM
G
Features
• Reverse Breakdown Voltages:
4x
•
A
Y
M
G
•
•
•
•
♦ 1.225 V
♦ 3.300 V
♦ 2.500 V
♦ 4.096 V
♦ 3.000 V
♦ 5.000 V
Accuracy Grades:
♦ A: ±0.1%
♦ D: ±1.0%
♦ B: ±0.2%
♦ E: ±2.0%
♦ C: ±0.5%
Operating Current: 60 mA to 15 mA
Low Output Noise: 35 mV
(10 Hz to 10 KHz)
Small Package Size: SOT−23, SC−70
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mobile Handheld Devices
Industrial Process Control
Instrumentation
Laptop and Desktop PCs
Automotive
Energy Management
© Semiconductor Components Industries, LLC, 2013
July, 2013 − Rev. 4
PIN CONNECTIONS
1
5
1
3
2
4
3
2
(SOT−23)
Typical Applications
•
•
•
•
•
•
= Specific Device Code
= (4L = LM4040, 4M = LM4041)
= Assembly Location Code
= Production Year
= Production Month
= Pb−Free Package
(SC−70)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 11 of this data sheet.
1
Publication Order Number:
LM4040/D
LM4040, LM4041
RS
VIN
VR
LM4040
LM4041
Figure 1. Test Circuit
Table 1. PIN DESCRIPTIONS
Pin
SOT−23
SC−70
Name
1
3
V+
Positive voltage
2
1
V−
Negative voltage
3
2
NC
This pin must be left floating or connected to V−.
4
NIC
No Internal Connection. A voltage or signal applied to this pin will have no effect.
5
NIC
Function
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Unit
Reverse Current
20
mA
Forward Current
10
mA
Junction Temperature
150
°C
Power Dissipation
SOT−23−3
300
mW
Power Dissipation
SC−70−5
240
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. RECOMMENDED OPERATING CONDITIONS
Parameter
Rating
Unit
IREVERSE
0.06 − 15
mA
Ambient Temperature Range
−40 to +85
°C
Table 4. ESD SUSCEPTABILITY
Symbol
ESD
Min
Units
Human Body Model
Parameter
2000
V
Machine Model
200
V
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2
LM4040, LM4041
Table 5. DC ELECTRICAL CHARACTERISTICS
(IR = 100 mA, TA = −40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
Limits
Symbol
Parameter
Min
Typ
Max
Units
LM4041A (0.1%)
1.2238
1.225
1.2262
V
LM4041B (0.2%)
1.2226
1.225
1.2274
LM4041C (0.5%)
1.219
1.225
1.231
LM4041D (1.0%)
1.213
1.225
1.237
LM4041E (2.0%)
1.200
Test Conditions
1.225 V
VR
VR
Reverse Breakdown Voltage
Reverse Breakdown Voltage
Tolerance
IR_MIN
Minimum Operating Current
DVR/DT
Reverse Breakdown Voltage
Temperature Coefficient
TA = +25°C
1.225
1.250
LM4041A
±1.2
±9.2
LM4041B
±2.4
±10.4
LM4041C
±6
±14
LM4041D
±12
±24
LM4041E
±25
±36
45
65
IR = 10 mA
±20
IR = 1 mA
ZR
eN
Reverse Breakdown Voltage
Change with Operating Current
Reverse Dynamic Impedance
mA
ppm/°C
LM4041A, B, C
±15
±100
LM4041D, E
±15
±150
±15
IR = 100 mA
DVR/DIR
mV
IR_MIN ≤ IR ≤
1 mA
LM4041A, B, C
0.7
2.0
LM4041D, E
0.7
2.5
1 mA ≤ IR ≤
15 mA
LM4041A, B, C
2.5
8
LM4041D, E
2.5
10
IR = 1 mA,
f = 120 Hz,
IAC = 0.1 IR
LM4041A, B
0.5
1.5
LM4041C
0.5
1.5
LM4041D, E
0.5
2.0
mV
W
Wideband Noise
IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz
200
mVRMS
DVR
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
120
ppm
VHYST
Thermal Hysteresis (Note 2)
DT = −40°C to +125°C
0.08
%
Reverse Breakdown Voltage
TA = +25°C
2.500 V
VR
VR
Reverse Breakdown Voltage
Tolerance
LM4040A (0.1%)
2.498
2.500
2.502
LM4040B (0.2%)
2.496
2.500
2.504
LM4040C (0.5%)
2.490
2.500
2.510
LM4040D (1.0%)
2.475
2.500
2.525
LM4040E (2.0%)
2.450
2.500
2.550
LM4040A
±2
±19
LM4040B
±4
±21
LM4040C
±10
±29
LM4040D
±25
±49
LM4040E
±50
±74
V
mV
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measurement after cycling to temperature +125°C.
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LM4040, LM4041
Table 5. DC ELECTRICAL CHARACTERISTICS
(IR = 100 mA, TA = −40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
Limits
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
45
65
mA
2.500 V
IR_MIN
Minimum Operating Current
DVR/DT
Reverse Breakdown Voltage
Temperature Coefficient
IR = 10 mA
IR = 1 mA
LM4040A, B, C
±15
±100
LM4040D, E
±15
±150
±15
IR = 100 mA
DVR/DIR
ZR
eN
Reverse Breakdown Voltage
Change with Operating Current
Reverse Dynamic Impedance
ppm/°C
±20
IR_MIN ≤ IR ≤
1 mA
LM4040A, B, C
0.3
1.0
LM4040D, E
0.3
1.2
1 mA ≤ IR ≤
15 mA
LM4040A, B, C
2.5
8
LM4040D, E
2.5
10
IR = 1 mA,
f = 120 Hz,
IAC = 0.1 IR
LM4040A, B
0.3
0.8
LM4040C
0.3
0.9
LM4040D, E
0.3
1.1
mV
W
Wideband Noise
IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz
350
mVRMS
DVR
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
120
ppm
VHYST
Thermal Hysteresis (Note 2)
DT = −40°C to +125°C
0.08
%
Reverse Breakdown Voltage
TA = +25°C
3.000 V
VR
VR
Reverse Breakdown Voltage
Tolerance
IR_MIN
Minimum Operating Current
DVR/DT
Reverse Breakdown Voltage
Temperature Coefficient
LM4040A (0.1%)
2.997
3.000
3.003
LM4040B (0.2%)
2.994
3.000
3.006
LM4040C (0.5%)
2.985
3.000
3.015
LM4040D (1.0%)
2.970
3.000
3.030
LM4040E (2.0%)
2.940
3.000
3.060
LM4040A
±3
±22
LM4040B
±6
±26
LM4040C
±15
±34
LM4040D
±30
±59
LM4040E
±60
±89
45
65
IR = 10 mA
±20
IR = 1 mA
DVR/DIR
Reverse Breakdown Voltage
Change with Operating Current
mV
mA
ppm/°C
LM4040A, B, C
±15
±100
LM4040D, E
±15
±150
IR = 100 uA
V
±15
IR_MIN ≤ IR ≤
1 mA
LM4040A, B, C
0.4
1.1
LM4040D, E
0.4
1.3
1mA ≤ IR ≤
15 mA
LM4040A, B, C
2.7
9
LM4040D, E
2.7
11
mV
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measurement after cycling to temperature +125°C.
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LM4040, LM4041
Table 5. DC ELECTRICAL CHARACTERISTICS
(IR = 100 mA, TA = −40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
Limits
Symbol
Parameter
Typ
Max
Units
LM4040A, B
0.4
0.9
W
LM4040C
0.4
0.9
LM4040D, E
0.4
1.2
Test Conditions
Min
3.000 V
ZR
eN
Reverse Dynamic Impedance
IR = 1 mA,
f = 120 Hz,
IAC = 0.1 IR
Wideband Noise
IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz
350
mVRMS
DVR
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
120
ppm
VHYST
Thermal Hysteresis (Note 2)
DT = −40°C to +125°C
0.08
%
Reverse Breakdown Voltage
TA = +25°C
3.300 V
VR
VR
VR
Reverse Breakdown Voltage
Reverse Breakdown Voltage
Tolerance
IR_MIN
Minimum Operating Current
DVR/DT
Reverse Breakdown Voltage
Temperature Coefficient
LM4040A (0.1%)
3.297
3.300
3.303
LM4040B (0.2%)
3.294
3.300
3.306
LM4040C (0.5%)
3.285
3.300
3.315
LM4040D (1.0%)
3.270
3.300
3.330
LM4040A
±3
±22
LM4040B
±6
±26
LM4040C
±15
±34
LM4040D
±30
±59
45
65
TA = +25°C
IR = 10 mA
LM4040A, B, C
±15
±100
LM4040D
±15
±150
ZR
Reverse Breakdown Voltage
Change with Operating Current
Reverse Dynamic Impedance
IR_MIN ≤ IR ≤
1 mA
LM4040A, B, C
0.3
1.0
LM4040D
0.3
1.2
1 mA ≤ IR ≤
15 mA
LM4040A, B, C
2.5
8
LM4040D
2.5
10
IR = 1 mA,
f = 120 Hz,
IAC = 0.1 IR
LM4040A, B
0.3
0.8
LM4040C
0.3
0.9
0.3
1.1
LM4040D
eN
mV
mA
±15
IR = 100 mA
DVR/DIR
V
ppm/°C
±20
IR = 1 mA
V
mV
W
Wideband Noise
IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz
350
mVRMS
DVR
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
120
ppm
VHYST
Thermal Hysteresis (Note 2)
DT = −40°C to +125°C
0.08
%
Reverse Breakdown Voltage
TA = +25°C
4.096 V
VR
LM4040A (0.1%)
4.092
4.096
4.100
LM4040B (0.2%)
4.088
4.096
4.104
LM4040C (0.5%)
4.080
4.096
4.120
LM4040D (1.0%)
4.055
4.096
4.137
V
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measurement after cycling to temperature +125°C.
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LM4040, LM4041
Table 5. DC ELECTRICAL CHARACTERISTICS
(IR = 100 mA, TA = −40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
Limits
Symbol
Parameter
Typ
Max
Units
LM4040A
±4
±31
mV
LM4040B
±8
±35
LM4040C
±20
±47
LM4040D
±41
±80
45
65
IR = 10 mA
±30
Test Conditions
Min
4.096 V
VR
Reverse Breakdown Voltage
Tolerance
IR_MIN
Minimum Operating Current
DVR/DT
Reverse Breakdown Voltage
Temperature Coefficient
IR = 1 mA
LM4040A, B, C
±20
±100
LM4040D
±20
±150
±15
IR = 100 mA
DVR/DIR
ZR
eN
Reverse Breakdown Voltage
Change with Operating Current
Reverse Dynamic Impedance
mA
ppm/°C
IR_MIN ≤ IR ≤
1 mA
LM4040A, B, C
0.5
1.2
LM4040D
0.5
1.5
1 mA ≤ IR ≤
15 mA
LM4040A, B, C
3.0
10
LM4040D
3.0
13
IR = 1 mA,
f = 120 Hz,
IAC = 0.1 IR
LM4040A, B
0.5
1.0
LM4040C
0.5
1.0
LM4040D
0.5
1.3
mV
W
Wideband Noise
IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz
800
mVRMS
DVR
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
120
ppm
VHYST
Thermal Hysteresis (Note 2)
DT = −40°C to +125°C
0.08
%
Reverse Breakdown Voltage
TA = +25°C
5.000 V
VR
VR
Reverse Breakdown Voltage
Tolerance
IR_MIN
Minimum Operating Current
DVR/DT
Reverse Breakdown Voltage
Temperature Coefficient
LM4040A (0.1%)
4.995
5.000
5.005
LM4040B (0.2%)
4.990
5.000
5.010
LM4040C (0.5%)
4.975
5.000
5.025
LM4040D (1.0%)
4.950
5.000
5.050
LM4040A
±5
±38
LM4040B
±10
±43
LM4040C
±25
±58
LM4040D
±50
±99
45
65
IR = 10 mA
mV
mA
ppm/°C
±30
IR = 1 mA
V
LM4040A, B, C
±20
±100
LM4040D
±20
±150
±15
IR = 100 mA
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measurement after cycling to temperature +125°C.
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LM4040, LM4041
Table 5. DC ELECTRICAL CHARACTERISTICS
(IR = 100 mA, TA = −40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
Limits
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
mV
5.000 V
DVR/DIR
ZR
eN
Reverse Breakdown Voltage
Change with Operating Current
Reverse Dynamic Impedance
IR_MIN ≤ IR ≤
1 mA
LM4040A, B, C
0.5
1.4
LM4040D
05
1.8
1 mA ≤ IR ≤
15 mA
LM4040A, B, C
3.5
12
LM4040D
3.5
15
IR = 1 mA,
f = 120 Hz,
IAC = 0.1 IR
LM4040A, B
0.5
1.1
LM4040C
0.5
1.1
LM4040D
0.5
1.5
W
Wideband Noise
IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz
800
mVRMS
DVR
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
120
ppm
VHYST
Thermal Hysteresis (Note 2)
DT = −40°C to +125°C
0.08
%
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measurement after cycling to temperature +125°C.
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LM4040, LM4041
TYPICAL PERFORMANCE CHARACTERISTICS
10
VIN (V)
0
5
0
3
6
2
4
VR (V)
VR (V)
VIN (V)
5
1
2
0
0
0
10
20
30
0
40
20
40
60
80
RESPONSE TIME (ms)
Figure 2. LM4040 − 2.5 V (RS = 30 k)
Figure 3. LM4040 − 5 V (RS = 30 k)
VIN (V)
RESPONSE TIME (ms)
5
0
1.5
VR (V)
1.0
0.5
0
0
10
20
30
40
RESPONSE TIME (ms)
Figure 4. LM4041 − 1.225 V (RS = 30 k)
100
REVERSE CURRENT (mA)
REVERSE CURRENT (mA)
100
80
60
40
+85°C
+25°C
20
80
60
40
+85°C
+25°C
−40°C
20
−40°C
0
0
0.5
1.0
1.5
2.0
2.5
0
3.0
0
1
2
3
4
5
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
Figure 5. Reverse Characteristics
(LM4040 − 2.5 V)
Figure 6. Reverse Characteristics
(LM4040 − 5 V)
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6
LM4040, LM4041
TYPICAL PERFORMANCE CHARACTERISTICS
0.3
0.4
IR = 150 mA
0.2
0.3
+35 ppm/°C
−20 ppm/°C
−0.2
0.1
0
−0.1
−0.3
−0.4
−0.4
1.E+03
1.E+02
−20
0
20
40
60
80
−0.5
−40
100
−20
0
20
40
60
80
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 7. Temperature Drift − LM4040
Figure 8. Temperature Drift − LM4041
CL = 0 mF
1.E+01
LM4040 − 5 V
1.E+00
CL = 1 mF
LM4040 − 2.5 V
1.E+02
100
1.E+03
IR = 150 mA
TJ = 25°C,
DIR = 0.1IR
LM4041 − 1.225 V
1.E+03
1.E+04
1.E+05
1.E+06
IR = 1 mA
TJ = 25°C,
DIR = 0.1IR
1.E+02
CL = 0 mF
LM4041 − 1.225 V
1.E+01
1.E+00
LM4040 − 5 V
CL = 1 mF
1.E−01
LM4040 − 2.5 V
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 9. Output Impedance vs. Frequency
Figure 10. Output Impedance vs. Frequency
100
REVERSE CURRENT (mA)
1.E−01
−29 ppm/°C
−0.2
−0.3
−0.5
−40
OUTPUT IMPEDANCE (W)
VR CHANGE (%)
0
−0.1
+48 ppm/°C
0.2
OUTPUT IMPEDANCE (W)
VR CHANGE (%)
0.1
IR = 150 mA
80
60
40
+85°C
+25°C
20
−40°C
0
0
0.4
0.8
1.2
1.6
REVERSE VOLTAGE (V)
Figure 11. Reverse Characteristics − LM4041
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2.0
LM4040, LM4041
Device Description
VS
The LM404x shunt references use ON Semiconductor’s
floating gate (EEPROM) technology to produce a capacitor
which stores an accurate and stable voltage that is used as the
reference voltage for a control amplifier and shunt
N−channel FET.
RS
VR ILOAD
ISHUNT
Figure 13. Typical Operating Circuit
+
To select a value of RS, set VS at its minimum value and
ILOAD at its maximum. Be sure to maintain a minimum
operating current of 60 mA through LM404x at all times, as
LM404x uses this current to power its internal circuitry. The
RS value should be large enough to keep ISHUNT less than
15 mA for proper regulation when VS is maximum and
ILOAD is at a minimum. Therefore, the value of RS is
bounded by the following equation:
+
−
VREF +
ǒVS(min) * VRǓ
ǒ60 mA ) ILOAD(max)Ǔ
−
Figure 12. Functional Block Diagram
u RS
and
The device operates like a zener diode; maintaining a
fixed voltage across its output terminals when biased with
60 mA to 15 mA of reverse current. The LM404x will also
act like a silicon diode when forward biased with currents up
to 10 mA.
RS u
ǒVS(max) * VRǓ
ǒ15 mA ) ILOAD(min)Ǔ
Choosing a larger resistance minimizes the power
dissipated in the circuit by reducing the shunt current.
Output Capacitance
Applications Information
The LM404x’s internal pass transistor maintains a
constant output voltage by sinking the necessary amount of
current across a source resistor. The source resistance (RS)
is set by the load current range (ILOAD), supply voltage (VS)
variations, LM404x’s terminal voltage (VR), and desired
quiescent current.
The LM404x does not require an external capacitor for
frequency stability and is stable for any output capacitance.
Effect of Temperature
LM404x has an output voltage temperature coefficient of
typically ±15 to ±30 ppm/°C meaning the LM404x’s output
voltage will change by 50 – 100 mV/°C for a 3.300 V
regulator. The polarity of this temperature induced voltage
shift can vary from device to device, some moving in the
positive direction and others in the negative direction.
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LM4040, LM4041
Table 6. ORDERING INFORMATION
Part Number
Specific
Device
Marking
Voltage
Accuracy
LM4041ATB−122GT3*
±0.1%
LM4041BTB−122GT3
±0.2%
LM4041CTB−122GT3
4M
1.225 V
±1.0%,
LM4041ETB−122GT3
±2.0%,
LM4040ATB−250GT3*
±0.1%
LM4040BTB−250GT3
±0.2%
2.500 V
±1.0%,
LM4040ETB−250GT3*
±2.0%,
LM4040ATB−300GT3*
±0.1%
LM4040BTB−300GT3
±0.2%
3.000 V
±1.0%,
LM4040ETB−300GT3*
±2.0%,
LM4040ATB−330GT3*
±0.1%
LM4040BTB−330GT3
±0.2%
LM4040CTB−330GT3
±0.5%
3.300 V
LM4040DTB−330GT3
±1.0%,
LM4040ETB−330GT3*
±2.0%,
LM4040ATB−409GT3*
±0.1%
LM4040BTB−409GT3
±0.2%
LM4040CTB−409GT3
4.096 V
±1.0%,
LM4040ETB−409GT3*
±2.0%,
LM4040ATB−500GT3
±0.1%
LM4040BTB−500GT3
±0.2%
5.000 V
SOT−23−3
150 ppm/°C
100 ppm/°C
150 ppm/°C
100 ppm/°C
150 ppm/°C
100 ppm/°C
150 ppm/°C
100 ppm/°C
±0.5%
LM4040DTB−409GT3
LM4040CTB−500GT3
−40°C to 85°C
100 ppm/°C
±0.5%
LM4040DTB−300GT3
4L
Package
(Note 3)
±0.5%
LM4040DTB−250GT3
LM4040CTB−300GT3
Temperature Range
±0.5%
LM4041DTB−122GT3
LM4040CTB−250GT3
Max Drift
150 ppm/°C
100 ppm/°C
±0.5%
LM4040DTB−500GT3
±1.0%,
LM4040ETB−500GT3*
±2.0%,
150 ppm/°C
*Consult Sales.
3. Tape & Reel, 3,000 Units / Reel
4. All packages are RoHS−compliant (Lead−free, Halogen−free).
5. The standard lead finish is NiPdAu.
6. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
7. For detailed information and a breakdown of device nomenclature and numbering systems, please see the ON Semiconductor Device
Nomenclature document, TND310/D, available at www.onsemi.com
http://onsemi.com
11
LM4040, LM4041
Table 6. ORDERING INFORMATION
Part Number
Specific
Device
Marking
Voltage
Accuracy
LM4041ASD−122GT3*
±0.1%
LM4041BSD−122GT3
±0.2%
LM4041CSD−122GT3
4M
1.225 V
±1.0%,
LM4041ESD−122GT3*
±2.0%,
LM4040ASD−250GT3*
±0.1%
LM4040BSD−250GT3
±0.2%
2.500 V
±1.0%,
LM4040ESD−250GT3*
±2.0%,
LM4040ASD−300GT3*
±0.1%
LM4040BSD−300GT3
±0.2%
3.000 V
±1.0%,
LM4040ESD−300GT3*
±2.0%,
LM4040ASD−330GT3*
±0.1%
LM4040BSD−330GT3
±0.2%
LM4040CSD−330GT3
±0.5%
3.300 V
LM4040DSD−330GT3
±1.0%,
LM4040ESD−330GT3*
±2.0%,
LM4040ASD−409GT3*
±0.1%
LM4040BSD−409GT3
±0.2%
LM4040CSD−409GT3
4.096 V
±1.0%,
LM4040ESD−409GT3*
±2.0%,
LM4040ASD−500GT3*
±0.1%
LM4040BSD−500GT3
±0.2%
5.000 V
SC−70−5
150 ppm/°C
100 ppm/°C
150 ppm/°C
100 ppm/°C
150 ppm/°C
100 ppm/°C
150 ppm/°C
100 ppm/°C
±0.5%
LM4040DSD−409GT3
LM4040CSD−500GT3
−40°C to 85°C
100 ppm/°C
±0.5%
LM4040DSD−300GT3
4L
Package
(Note 3)
±0.5%
LM4040DSD−250GT3
LM4040CSD−300GT3
Temperature Range
±0.5%
LM4041DSD−122GT3
LM4040CSD−250GT3
Max Drift
150 ppm/°C
100 ppm/°C
±0.5%
LM4040DSD−500GT3
±1.0%,
LM4040ESD−500GT3*
±2.0%,
150 ppm/°C
*Consult Sales.
3. Tape & Reel, 3,000 Units / Reel
4. All packages are RoHS−compliant (Lead−free, Halogen−free).
5. The standard lead finish is NiPdAu.
6. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
7. For detailed information and a breakdown of device nomenclature and numbering systems, please see the ON Semiconductor Device
Nomenclature document, TND310/D, available at www.onsemi.com
http://onsemi.com
12
LM4040, LM4041
PACKAGE DIMENSIONS
SOT−23, 3 Lead
CASE 527AG
ISSUE O
D
SYMBOL
MIN
A
0.89
1.12
A1
0.013
0.10
b
0.37
0.50
c
0.085
0.18
D
2.80
3.04
E
2.10
2.64
E1
1.20
1.40
3
E1
1
E
2
e
MAX
e
0.95 BSC
e1
1.90 BSC
L
0.40 REF
e1
L1
TOP VIEW
θ
A
NOM
0.54 REF
0º
8º
q
b
L1
A1
SIDE VIEW
L
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC TO-236.
http://onsemi.com
13
c
LM4040, LM4041
PACKAGE DIMENSIONS
SC−88A (SC−70 5 Lead), 1.25x2
CASE 419AC
ISSUE A
SYMBOL
MIN
A
0.80
D
e
e
E1 E
MAX
1.10
A1
0.00
0.10
A2
0.80
1.00
b
0.15
0.30
0.18
c
0.10
D
1.80
2.00
2.20
E
1.80
2.10
2.40
E1
1.15
1.25
1.35
0.65 BSC
e
0.26
L
L1
0.36
0.46
0.42 REF
0.15 BSC
L2
TOP VIEW
NOM
θ
0º
8º
θ1
4º
10º
q1
A2 A
q
q1
b
L
L1
A1
SIDE VIEW
c
L2
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-203.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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http://onsemi.com
14
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
LM4040/D