DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON) max ID max TA = +25°C 18mΩ @ VGS = 10V 9.0A 30mΩ @ VGS = 4.5V 7.0A V(BR)DSS 30V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Backlighting Power Management Functions DC-DC Converters SO-8 Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate) S D S D S D G D Top View D G S Equivalent circuit Top View Internal Schematic Ordering Information (Note 4) Part Number DMN3030LSS-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 N3030LS N3030LS YY WW YY WW 1 4 Chengdu A/T Site DMN3030LSS Document number: DS31261 Rev. 12 - 2 1 = Manufacturer’s Marking N3030LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 4 Shanghai A/T Site 1 of 6 www.diodes.com October 2013 © Diodes Incorporated DMN3030LSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Symbol VDSS VGSS Steady State Units V V IDM Value 30 25 9.0 6.75 40 Symbol PD RJA TJ, TSTG Value 2.5 50 -55 to +150 Unit W °C/W °C TA = +25°C TA = +70°C ID Pulsed Drain Current (Note 6) A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Symbol Min Typ Max Unit BVDSS IDSS 30 1 100 1 V μA nA μA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = 25V, VDS = 0V 2.1 18 30 V 1.2 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 9A VGS = 4.5V, ID = 7A VDS = 10V, ID = 9A VGS = 0V, IS = 2.1A pF pF pF Ω IGSS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1 Static Drain-Source On-Resistance RDS (ON) gfs VSD 0.5 15.7 26.4 5.8 0.7 Ciss Coss Crss RG 0.30 741 124 95 0.88 2.5 7.6 16.7 1.9 5.2 4.0 4.4 23.0 9.4 12 25 Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS (Note 8) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: Qg Qgs Qgd td(on) tr td(off) tf mΩ Test Condition VDS = 15V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = 15V, VGS = 4.5V, ID = 9A nC ns VDS = 15V, VGS = 10V, ID = 9A VGS = 10V, VDS = 15V, RL = 15Ω, RG = 6Ω 5. Device mounted on 2 oz copper pad layout with RJA = 50°C/W. 6. Pulse width 10μS, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN3030LSS Document number: DS31261 Rev. 12 - 2 2 of 6 www.diodes.com October 2013 © Diodes Incorporated DMN3030LSS 16 18 14 VGS = 10V VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 15 12 9 6 10 VGS = 3.0V 3 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 6 4 0 1.5 5 0.03 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 VGS = 4.5V 0.02 VGS = 10V 0.01 0 0.1 1 10 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 100 0.05 3.5 VGS = 4.5V TA = 150°C 0.04 TA = 125°C TA = 85°C 0.03 TA = 25°C 0.02 0.01 TA = -55°C 0 3 6 9 12 ID, DRAIN-SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 15 1.6 0.03 1.5 VGS = 10V 0.025 TA = 150°C TA = 125°C TA = 85°C 0.02 TA = 25°C 0.015 0 3 6 9 12 ID, DRAIN-SOURCE CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Temperature DMN3030LSS Document number: DS31261 Rev. 12 - 2 1.4 VGS = 10V ID = 10A 1.3 1.2 VGS = 4.5V ID = 5A 1.1 1.0 0.9 0.8 TA = -55°C 0.01 2 2.5 3 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 0.06 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 8 2 VGS = 2.5V 0 VDS = 5V 12 15 3 of 6 www.diodes.com 0.7 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature October 2013 © Diodes Incorporated DMN3030LSS 10,000 2.2 ID = 250µA C, CAPACITANCE (pF) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.5 1.9 1.6 1,000 100 1.3 10 1 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Total Capacitance Fig. 7 Gate Threshold Variation vs. Ambient Temperature 30 100 IS, SOURCE CURRENT (A) 10 1 VGS = 150°C 0.1 VGS = 125°C VGS = 85°C 0.01 VGS = 25°C VGS = -55°C 0.001 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 1 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 RJA(t) = r(t) * RJA RJA = 90°C/W D = 0.02 0.01 P(pk) D = 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 10 Transient Thermal Response DMN3030LSS Document number: DS31261 Rev. 12 - 2 4 of 6 www.diodes.com October 2013 © Diodes Incorporated DMN3030LSS Package Outline Dimensions 0.254 Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMN3030LSS Document number: DS31261 Rev. 12 - 2 5 of 6 www.diodes.com October 2013 © Diodes Incorporated DMN3030LSS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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