IGBT Highspeed5IGBTinTRENCHSTOPTM5technology IGW50N65H5 650VIGBThighspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IGW50N65H5 Highspeedswitchingseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTM5technology FeaturesandBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQg •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters G C E Packagepindefinition: •Pin1-gate •Pin2&backside-collector •Pin3-emitter KeyPerformanceandPackageParameters Type IGW50N65H5 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 650V 50A 1.65V 175°C G50H655 PG-TO247-3 2 Rev.1.1,2012-11-09 IGW50N65H5 Highspeedswitchingseriesfifthgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 3 Rev.1.1,2012-11-09 IGW50N65H5 Highspeedswitchingseriesfifthgeneration Maximumratings Parameter Symbol Value Unit Collector-emitter voltage VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IC 80.0 56.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 150.0 A TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C - 150.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 305.0 145.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.50 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=50.0A Tvj=25°C Tvj=125°C Tvj=175°C - 1.65 1.85 1.95 2.10 - Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 3.2 4.0 4.8 Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 4 V V V 40.0 µA 2000.0 Rev.1.1,2012-11-09 IGW50N65H5 Highspeedswitchingseriesfifthgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 3000 - - 50 - - 11 - - 120.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=50.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 21 - ns - 15 - ns - 180 - ns - 18 - ns - 0.52 - mJ - 0.18 - mJ - 0.70 - mJ - 20 - ns - 4 - ns - 200 - ns - 25 - ns - 0.11 - mJ - 0.05 - mJ - 0.16 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=25.0A, VGE=0.0/15.0V, rG=12.0Ω,Lσ=30nH, Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=25°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, rG=12.0Ω,Lσ=30nH, Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 5 Rev.1.1,2012-11-09 IGW50N65H5 Highspeedswitchingseriesfifthgeneration SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 20 - ns - 15 - ns - 205 - ns - 26 - ns - 0.75 - mJ - 0.27 - mJ - 1.02 - mJ - 18 - ns - 5 - ns - 250 - ns - 35 - ns - 0.20 - mJ - 0.08 - mJ - 0.28 - mJ IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=150°C, VCC=400V,IC=25.0A, VGE=0.0/15.0V, rG=12.0Ω,Lσ=30nH, Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=150°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, rG=12.0Ω,Lσ=30nH, Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 6 Rev.1.1,2012-11-09 IGW50N65H5 Highspeedswitchingseriesfifthgeneration 300 100 270 10 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 240 tp=1µs 10µs 50µs 100µs 1 200µs 500µs 210 180 150 120 90 60 DC 30 0.1 1 10 100 0 1000 25 VCE,COLLECTOR-EMITTERVOLTAGE[V] 100 125 150 175 Figure 2. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 90 150 80 135 120 IC,COLLECTORCURRENT[A] 70 IC,COLLECTORCURRENT[A] 75 TC,CASETEMPERATURE[°C] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V. RecommendeduseatVGE≥7.5V) 60 50 40 30 20 VGE=20V 18V 105 15V 90 12V 75 10V 60 8V 7V 45 6V 30 10 0 50 5V 15 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0 1 2 3 4 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) Figure 4. Typicaloutputcharacteristic (Tvj=25°C) 7 Rev.1.1,2012-11-09 IGW50N65H5 Highspeedswitchingseriesfifthgeneration 150 150 130 120 VGE=20V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 120 18V 105 15V 90 12V 75 10V 60 8V 7V 45 6V 30 110 100 90 80 70 60 50 40 30 5V 20 15 0 Tj=25°C Tj=150°C 140 135 10 0 1 2 3 4 0 5 3.5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=150°C) Figure 6. Typicaltransfercharacteristic (VCE=20V) 2.50 1000 IC=12,5A IC=25A IC=50A 2.25 td(off) tf td(on) tr 2.00 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 4.0 1.75 1.50 1.25 100 10 1.00 0.75 0.50 0 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 30 60 90 120 150 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,rG=12Ω,Dynamictestcircuitin Figure E) 8 Rev.1.1,2012-11-09 IGW50N65H5 Highspeedswitchingseriesfifthgeneration 1000 td(off) tf td(on) tr td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 10 1 5 15 25 35 45 55 65 75 100 10 1 85 25 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,IC=25A,Dynamictestcircuitin Figure E) 100 125 150 175 12 typ. min. max. 5.5 Eoff Eon Ets 11 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=25A,rG=12Ω,Dynamictestcircuitin Figure E) 6.0 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 50 Tvj,JUNCTIONTEMPERATURE[°C] 10 9 8 7 6 5 4 3 2 1 0 25 50 75 100 125 0 150 Tvj,JUNCTIONTEMPERATURE[°C] 0 30 60 90 120 150 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.5mA) 9 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,rG=12Ω,Dynamictestcircuitin Figure E) Rev.1.1,2012-11-09 IGW50N65H5 Highspeedswitchingseriesfifthgeneration 2.50 1.2 Eoff Eon Ets Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 1.0 0.8 0.6 0.4 0.2 0.25 0.00 5 15 25 35 45 55 65 75 0.0 85 25 rG,GATERESISTOR[Ω] Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,IC=25A,Dynamictestcircuitin Figure E) 75 100 125 150 175 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=25A,rG=12Ω,Dynamictestcircuitin Figure E) 1.2 16 Eoff Eon Ets 130V 520V 14 1.0 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 50 Tvj,JUNCTIONTEMPERATURE[°C] 0.8 0.6 0.4 12 10 8 6 4 0.2 2 0.0 200 250 300 350 400 450 0 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=15/0V, IC=25A,rG=12Ω,Dynamictestcircuitin Figure E) 0 20 40 60 80 100 120 QGE,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=50A) 10 Rev.1.1,2012-11-09 IGW50N65H5 Highspeedswitchingseriesfifthgeneration 1 C,CAPACITANCE[pF] 1E+4 Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] Ciss Coss Crss 1000 100 10 1 0 5 10 15 20 25 D=0.5 0.2 0.05 0.02 0.01 single pulse 0.01 0.001 1E-6 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0.1 0.1 i: 1 2 3 ri[K/W]: 0.1621884 0.2278266 0.109985 τi[s]: 8.6E-4 0.01112208 0.09568113 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. IGBTtransientthermalresistance (D=tp/T) 11 Rev.1.1,2012-11-09 IGW50N65H5 Highspeedswitchingseriesfifthgeneration PG-TO247-3 12 Rev.1.1,2012-11-09 IGW50N65H5 Highspeedswitchingseriesfifthgeneration a a b b t 13 Rev.1.1,2012-11-09 IGW50N65H5 Highspeedswitchingseriesfifthgeneration RevisionHistory IGW50N65H5 Revision:2012-11-09,Rev.1.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2012-11-09 Preliminary data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected] Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2013InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 14 Rev.1.1,2012-11-09