AO5404E N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5404E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. -RoHS compliant VDS (V) = 20V ID = 0.5 A (VGS = 4.5V) RDS(ON) < 0.55 Ω (VGS = 4.5V) RDS(ON) < 0.68 Ω (VGS = 2.5V) RDS(ON) < 0.80 Ω (VGS = 1.8V) ESD PROTECTED! SC89-3L D D1 G S1 S G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec V Drain-Source Voltage DS VGS Gate-Source Voltage TA=25°C Continuous Drain Current A, F ID TA=70°C PD TA=70°C TJ, TSTG Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State C Steady-State Alpha & Omega Semiconductor, Ltd. 0.5 0.45 A 3 Junction and Storage Temperature Range Maximum Junction-to-Lead V 0.5 IDM TA=25°C Power Dissipation ±8 0.5 Pulsed Drain Current B A 20 Units V Steady State RθJA RθJL 0.38 0.28 0.24 0.18 °C -55 to 150 Typ 275 360 300 W Max 330 450 350 Units °C/W °C/W °C/W www.aosmd.com AO5404E Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ 20 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.45 ID(ON) On state drain current VGS=4.5V, VDS=5V 3 TJ=55°C 5 VDS=0V, VGS=±4.5V µA V 0.395 0.55 0.6 0.85 VGS=2.5V, ID=0.5A 0.479 0.68 Ω VGS=1.8V, ID=0.3A 0.578 0.8 Ω TJ=125°C A gFS Forward Transconductance VDS=5V, ID=0.5A 1.5 VSD Diode Forward Voltage IS=0.1A,VGS=0V Maximum Body-Diode Continuous Current 0.65 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr µA 1 Static Drain-Source On-Resistance Output Capacitance ±1 ±100 RDS(ON) Crss µΑ 0.6 VDS=0V, VGS=±8V VGS=4.5V, ID=0.5A Coss Units V 1 VDS=20V, VGS=0V IDSS IS Max 35 VGS=0V, VDS=10V, f=1MHz VGS=5V, VDS=10V, RL=50Ω, RGEN=3Ω S 1 V 0.4 A 45 pF 8 pF 6 pF 0.63 VGS=4.5V, VDS=10V, ID=0.5A 1 Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=0.5A, dI/dt=100A/µs nC 0.08 nC 0.16 nC 4.5 ns 3.3 ns 78 ns 32 IF=0.5A, dI/dt=100A/µs Ω 8 ns 10 2 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. 0.5 B: Repetitive rating, pulse width limited by junction temperature. 0.45 C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve 0.28 provides a single pulse rating. 0.18 F. The maximum current rating is limited by bond-wires Rev0: Jan, 08 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5404E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 3 4.5V VDS=5V 2.5V 1.5 3.5V 2 25°C ID(A) ID (A) 2V Vgs=1.5V 1 125°C 1 0.5 1V 0 0 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 1.8 RDS(ON) (Ω) 0.7 Normalized On-Resistance 0.8 VGS=1.8V 0.6 VGS=2.5V 0.5 0.4 VGS=4.5V 0.3 0.2 VGS=4.5V ID=0.5A 1.6 1.4 VGS=1.8V ID=-0.3A 1.2 VGS=2.5V ID=0.5A 1 0.8 0.6 0 0.2 0.4 0.6 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 0.5 0.45 1.0E+00 1 ID=0.5A 1.0E-01 0.8 125°C 0.28 125°C 0.18 1.0E-02 0.6 IS (A) RDS(ON) (Ω) 25 0.4 25°C 1.0E-03 1.0E-04 25°C 0.2 1.0E-05 1.0E-06 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO5404E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 5 VDS=10V ID=0.5A Capacitance (pF) VGS (Volts) 4 3 2 Ciss 40 20 Coss 1 0 Crss 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 Qg (nC) Figure 7: Gate-Charge Characteristics 20 RDS(ON) limited 10 100µ 0.1s DC 0.1 0.1 1ms 1 6 10 2 0 0.0001 100 0.001 0.01 VDS (Volts) 1 10 100 0.5 0.45 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=450°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.28 0.18 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 8 4 10ms 1s 10s TJ(Max)=150°C TA=25°C 0.0 TJ(Max)=150°C TA=25°C 12 Power (W) ID (Amps) 15 14 10µs ZθJA Normalized Transient Thermal Resistance 10 VDS (Volts) Figure 8: Capacitance Characteristics 10.0 1.0 5 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com