isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -45V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -2.0V(Max.)@ IC= -5.0A = -3.0V(Max.)@ IC= -10A ·Complement to Type BDW39 APPLICATIONS ·Designed for general purpose and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous -0.5 A PC Collector Power Dissipation @ TC=25℃ 85 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.47 ℃/W BDW44 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDW44 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -10mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -50mA -3.0 V VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -4V -3.0 V ICBO Collector Cutoff Current VCB= -45V; IE= 0 -1.0 mA ICEO Collector Cutoff Current VCE= -22.5V; IB= 0 -2.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2.0 mA hFE-1 DC Current Gain IC= -5A ; VCE= -4V 1000 hFE-2 DC Current Gain IC= -10A ; VCE= -4V 250 Current-Gain—Bandwidth Product IC= -3A; VCE= -3V; ftest= 1MHz Output Capacitance IE= 0; VCB= -10V; ftest= 0.1MHz fT COB isc Website：www.iscsemi.cn -45 UNIT B B 2 V 4 MHz 300 pF