Semipower ES1JF Surface mount superfast recovery rectifier Datasheet

ES1AF THRU ES1JF
Surface Mount Superfast Recovery Rectifier
Reverse Voltage – 50 to 600 V
PINNING
Forward Current – 1 A
PIN
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Superfast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
DESCRIPTION
1
Cathode
2
Anode
1
2
Top View
Marking Code:
ES1AF~ES1JF: ES1A~ES1J
Simplified outline SMAF and symbol
MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 27mg / 0.00095oz
Absolute Maximum Ratings and Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
ES1AF
ES1BF
ES1CF
ES1DF
ES1EF
ES1GF
ES1JF
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
50
100
150
200
300
400
600
V
Maximum RMS voltage
V RMS
35
70
105
140
210
280
420
V
Maximum DC Blocking Voltage
V DC
50
100
150
200
300
400
600
V
Maximum Average Forward Rectified Current
at T c = 125 °C
I F(AV)
1
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
I FSM
30
A
Maximum Forward Voltage at 1 A
VF
Parameter
Maximum DC Reverse Current
T a = 25 °C
at Rated DC Blocking Voltage
T a =125 °C
Typical Junction Capacitance
at V R =4V, f=1MHz
Maximum Reverse Recovery Time
(1)
Typical Thermal Resistance (2)
Operating and Storage Temperature Range
1.25
1
1.68
V
IR
5
100
μA
Cj
15
pF
t rr
35
ns
RθJA
80
°C/W
T j , T stg
-55 ~ +150
°C
(1)Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A .
(2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
2016 Rev 1.0
Page 1 of 3
ES1AF THRU ES1JF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
t rr
10 ohm
Noninductive
+0.5
D.U.T
+
PULSE
GENERATOR
Note 2
25Vdc
approx
0
-
-0.25
1 ohm
NonInductive
OSCILLOSCOPE
Note 1
-1.0
Note:1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
10ns/div
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
300
1.2
1.0
I R - Reverse Current ( μ A)
Average Forward Current (A)
Fig.2 Maximum Average Forward Current Rating
0.8
0.6
0.4
0.2
Single phase half-wave 60 Hz
resistive or inductive load
100
T J =125°C
10
T J =75°C
1.0
T J =25°C
0.1
0.0
25
50
75
100
125
150
175
40
20
0
Case Temperature (°C)
T J =25°C
1.0
ES1AF~ES1DF
ES1EF/ES1GF
0.1
100
Fig.5 Typical Junction Capacitance
Junction Capacitance ( pF)
Instaneous Forward Current (A)
Fig.4 Typical Forward Characteristics
10
80
60
% of PIV.VOLTS
ES1JF
0.01
100
10
T J=25°C
f = 1.0MHz
V sig = 50mV p-p
1
0.001
0
0.5
1.5
1.0
2.0
2.5
Instaneous Forward Voltage (V)
0.1
1.0
10
100
Reverse Voltage (V)
Peak Forward Surage Current (A)
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
35
30
25
20
15
10
05
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
2016 Rev 1.0
Page 2 of 3
ES1AF THRU ES1JF
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SMAF
∠ALL ROUND
C
A
∠ALL ROUND
HE
g
Top View
mil
Bottom View
A
C
D
E
e
g
HE
max
1.1
0.20
3.7
2.7
1.6
1.2
4.9
min
0.9
0.12
3.3
2.4
1.3
0.8
4.4
max
43
7.9
146
106
63
47
193
min
35
4.7
130
94
51
31
173
UNIT
mm
g
pad
e
E
A
pad
D
E
A
V M
7°
The recommended mounting pad size
Marking
Type number
2.2
(86)
1.6
(63)
1.8
(71)
1.6
(63)
∠
mm
Unit :
(mil)
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Marking code
ES1AF
ES1A
ES1BF
ES1B
ES1CF
ES1C
ES1DF
ES1D
ES1EF
ES1E
ES1GF
ES1G
ES1JF
ES1J
2016 Rev 1.0
Page 3 of 3
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