SSC BAS86 0.2a surface-mount small-signal schottky diode Datasheet

BAS86
0.2A Surface-mount Small-signal Schottky Diode
PRODUCT SUMMARY
Voltage range 50 Volts
Popular small Mini-MELF package
Dissipation 200mW at TA = 25°C
SOD-80 (Mini-MELF)
FEATURES
For general-purpose applications.
This diode features low turn-on voltage.
This Schottky barrier device is protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
The low forward voltage drop and fast switching make it ideal for
protecting MOS devices, or as steering, biasing and coupling
diodes for fast switching and low logic level applications.
This diode is also available in the DO-35 case as a BAT86.
MECHANICAL DATA
Case: MiniMELF glass case (SOD-80)
Weight: approx. 0.05g
Cathode band color: Green
Dimensions in inches and (millimeters)
Pb-free, RoHS compliant.
MAXIMUM RATINGS
Rating at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Volts
Continuous reverse voltage
VR
50
Forward continuous current at Tamb=25oC
IF
200
(Note 1)
mA
Repetitive peak forward current
at tp<1s, d<0.5, Tamb=25oC
IFRM
500
(Note 1)
mA
Power dissipation at Tamb=25oC
Ptot
200
(Note 1)
mW
Thermal resistance junction to ambient air
RθJA
300
(Note 1)
°C/W
Junction temperature
Ambient operating temperature range
Storage temperature range
Tj
125
°C
Tamb
-65 to +125
°C
TS
-65 to +150
°C
Notes: 1. Valid as long as the electrodes are maintained at 25°C.
10/1/2006 Rev.3.01
www.SiliconStandard.com
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BAS86
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise noted.
Parameter
Reverse breakdown voltage
Leakage current
Symbol
Test Condition
Min.
Typ.
Max.
Unit
V(BR)R
IR=10uA (pulsed)
50
-
-
Volts
0.2
0.5
mA
IR
VR=25V
Forward voltage
VF
Pulse Test tp<300us, d<2 %
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
-
0.200
0.275
0.365
0.460
0.700
0.300
0.380
0.450
0.600
0.900
Capacitance
Ctot
VR=1V, f=1MHz
-
-
8
pF
trr
IF=10mA, IR=10mA,
IR=1mA
-
-
5
ns
Reverse recovery time
Volt
o
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10/1/2006 Rev.3.01
www.SiliconStandard.com
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