GTM GTT3434 N-channel enhancement mode power mosfet Datasheet

Pb Free Plating Product
ISSUED DATE :2006/10/31
REVISED DATE :
GTT3434
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
30V
34m
6.1A
Description
The GTT3434 uses advanced trench technology to provide excellent on-resistance and low gate charge.
The TSSOP-6 package is universally used for all commercial-industrial surface mount applications.
Features
* Low on-resistance
*Capable of 2.5V gate drive
Package Dimensions
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min.
Max.
1.10 MAX.
0
0.10
0.70
1.00
0.12 REF.
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min.
Max.
0.45 REF.
0.60 REF.
0°
10°
0.30
0.50
0.95 REF.
1.90 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
Unit
VDS
30
V
VGS
±12
V
3
ID @TA=25
6.1
A
3
ID @TA=70
4.9
A
30
A
1.14
W
Continuous Drain Current , [email protected]
Continuous Drain Current , [email protected]
Pulsed Drain Current
Symbol
1
IDM
Total Power Dissipation
PD @TA=25
Linear Derating Factor
0.01
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Value
Rthj-a
110
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
GTT3434
3
Max.
Unit
/W
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ISSUED DATE :2006/10/31
REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
VGS=0, ID=250uA
Gate Threshold Voltage
VGS(th)
0.6
-
-
V
VDS=VGS, ID=1mA
gfs
-
20
-
S
VDS=10V, ID=6.1A
IGSS
-
-
±100
nA
VGS= ±12V
-
-
1
uA
VDS=30V, VGS=0
-
-
5
uA
VDS=24V, VGS=0
-
-
34
-
-
50
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
IDSS
RDS(ON)
m
Test Conditions
VGS=4.5V, ID=6.1A
VGS=2.5V, ID=2.0A
Total Gate Charge2
Qg
-
8
12
Gate-Source Charge
Qgs
-
1.9
-
Gate-Drain (“Miller”) Change
Qgd
-
2.6
-
Td(on)
-
21
-
Tr
-
45
-
Td(off)
-
40
-
Tf
-
30
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.2
V
IS=1.7A, VGS=0V
Trr
-
40
-
ns
IS=1.7A, dI/dt=100A/ s
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
nC
ID=6.1A
VDS=15V
VGS=4.5V
ns
VDS=15V
ID=1A
VGS=4.5V
RG=6
RL=15
Source-Drain Diode
Parameter
Forward On Voltage2
2
Reverse Recovery Time
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad.
GTT3434
Page: 2/4
ISSUED DATE :2006/10/31
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Drain Current
Fig 5. On-Resistance
v.s. Gate-Source Voltage
GTT3434
Fig 2. Transfer Characteristics
Fig 4. On-Resistance
v.s. Junction Temperature
Fig 6. Body Diode Characteristics
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ISSUED DATE :2006/10/31
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Threshold Voltage
Fig 10. Single Pulse Power
0.0001
0.001
0.01
0.1
1
10
100
600
Fig 11. Normalized Maximum Transient Thermal Impedance
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GTT3434
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