JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diodes WBFBP-06C FBAT54SDW (2×2×0.5) unit: mm SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES z Low Forward Voltage Drop z Fast Switching APPLICATION Ultra high speed switching, rectifiers For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) FBAT54SDW Marking:KL8 Maximum Ratings @TA=25℃ Parameter Symbol Limits Unit VRM VR 30 V Average Rectified Output Current IO 100 mA Power Dissipation PD 150 mW TJ 125 ℃ TSTG -65-125 ℃ Peak Repetitive reverse voltage DC Blocking Voltage Junction temperature Storage temperature range ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage Forward Total leakage current voltage capacitance Reverse recovery time Symbol V(BR) IR VF CT t rr unless Test otherwise conditions IR= 100μA VR=25V specified） MIN MAX 30 V 2 IF=0.1mA 240 IF=1mA 320 IF=10mA 400 IF=30mA 500 IF=100mA 1000 VR=1V,f=1MHz IF=10mA, IR=10mA~1mA RL=100Ω UNIT uA mV 10 pF 5 nS Typical Characteristics Symbol A A1 b D E D1 E1 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.150 0.250 1.900 2.100 1.900 2.100 0.420 REF. 0.420 REF. 0.650 TYP. 0.600 REF. 0.300 REF. 0.500 REF. Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.006 0.010 0.075 0.083 0.075 0.083 0.017 REF. 0.017 REF. 0.026 TYP. 0.024 REF. 0.012 REF. 0.020 REF. APPLICATION CIRCUITS Bridge rectifiers