APTM100TDU35P Triple dual common source MOSFET Power Module D5 G3 G1 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D3 D2 S1 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration D6 G1 S1/S2 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D5 G3 S3/S4 S3 G5 S5/S6 S5 S2 S4 S6 G2 G4 G6 D4 D6 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 22 17 88 ±30 350 390 25 50 3000 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM100TDU35P– Rev 0 September, 2004 D3 D1 VDSS = 1000V RDSon = 350mΩ max @ Tj = 25°C ID = 22A @ Tc = 25°C APTM100TDU35P All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V, ID = 250µA Min 1000 VGS = 0V,VDS = 1000V T j = 25°C VGS = 0V,VDS = 800V T j = 125°C VGS = 10V, ID = 11A VGS = VDS, ID = 2.5mA VGS = ±30V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Min VGS = 10V VBus = 500V ID = 22A Qrr Reverse Recovery Charge Typ 5.2 0.88 0.16 186 Unit V 250 1000 350 5 ±100 mΩ V nA Max Unit µA nF nC 122 18 12 40 900 Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 22A, R G = 5Ω 1423 Test Conditions ns 155 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 22A, R G = 5Ω µJ 623 µJ 779 Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 22A IS = - 22A VR = 500V diS/dt = 100A/µs Max 24 Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery Z trr Reverse Recovery Time 3 Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 22A R G = 5Ω Rise Time Typ Max 22 17 1.3 10 Unit A Tj = 25°C 1170 V V/ns ns Tj = 25°C 16.28 µC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Z dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 22A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com 2–6 APTM100TDU35P– Rev 0 September, 2004 Symbol BVDSS APTM100TDU35P Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Min IGBT RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 2500 -40 -40 -40 3 Typ Max 0.32 150 125 100 5 250 Unit °C/W V °C N.m g Package outline APT website – http://www.advancedpower.com 3–6 APTM100TDU35P– Rev 0 September, 2004 5 places (3:1) APTM100TDU35P Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 60 80 7V 40 6.5V 30 6V 20 5.5V 10 VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 70 ID, Drain Current (A) 60 50 40 30 TJ=25°C 20 10 5V 0 0 5 10 15 20 25 TJ=125°C 30 0 VGS=10V 1.1 VGS=20V 1 3 4 5 6 7 8 9 25 Normalized to VGS=10V @ 11A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS , Drain to Source Voltage (V) 1.4 TJ=-55°C 0 0.9 0.8 20 15 10 5 0 0 10 20 30 40 ID, Drain Current (A) 50 60 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4–6 APTM100TDU35P– Rev 0 September, 2004 I D, Drain Current (A) VGS=15, 10&8V 50 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=11A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100µs limited by RDSon 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 100 1.2 1.0 0.9 0.8 0.7 1ms 10 Single pulse TJ=150°C 10ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage 10000 Ciss Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 14 I D=22A TJ=25°C 12 VDS=200V VDS=500V 10 V DS =800V 8 6 4 2 0 0 50 APT website – http://www.advancedpower.com 100 150 200 250 Gate Charge (nC) 5–6 APTM100TDU35P– Rev 0 September, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100TDU35P APTM100TDU35P Delay Times vs Current Rise and Fall times vs Current 80 180 t d(off) VDS=670V RG=5Ω TJ=125°C L=100µH 70 140 60 120 tr and tf (ns) V DS=670V RG=5Ω T J=125°C L=100µH 100 80 60 40 50 40 tr 30 20 td(on) 10 20 0 0 0 10 20 30 40 50 0 10 ID, Drain Current (A) 50 4 Eon V DS=670V RG=5Ω T J=125°C L=100µH 2 1.5 Switching Energy (mJ) Switching Energy (mJ) 20 30 40 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 2.5 E off 1 0.5 0 VDS=670V ID=22A TJ=125°C L=100µH 3.5 3 2.5 Eoff 2 Eon 1.5 1 0.5 0 0 10 20 30 40 50 0 5 10 ID, Drain Current (A) 15 20 25 30 35 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 250 225 200 175 150 125 100 75 I DR, Reverse Drain Current (A) Frequency (kHz) tf ZVS ZCS VDS=670V D=50% RG=5Ω T J=125°C T C=75°C 50 25 0 5 8 Hard switching 10 13 15 18 ID, Drain Current (A) 20 100 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM100TDU35P– Rev 0 September, 2004 td(on) and td(off) (ns) 160