ADPOW APTM100TDU35P Triple dual common source mosfet power module Datasheet

APTM100TDU35P
Triple dual common source
MOSFET Power Module
D5
G3
G1
G5
S3
S1
S5
S1/S2
S3/S4
S5/S6
S2
S4
S6
G2
G4
G6
D2
D4
D1
D3
D2
S1
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
D6
G1
S1/S2
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
D5
G3
S3/S4
S3
G5
S5/S6
S5
S2
S4
S6
G2
G4
G6
D4
D6
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
22
17
88
±30
350
390
25
50
3000
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM100TDU35P– Rev 0 September, 2004
D3
D1
VDSS = 1000V
RDSon = 350mΩ max @ Tj = 25°C
ID = 22A @ Tc = 25°C
APTM100TDU35P
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V, ID = 250µA
Min
1000
VGS = 0V,VDS = 1000V
T j = 25°C
VGS = 0V,VDS = 800V
T j = 125°C
VGS = 10V, ID = 11A
VGS = VDS, ID = 2.5mA
VGS = ±30V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Min
VGS = 10V
VBus = 500V
ID = 22A
Qrr
Reverse Recovery Charge
Typ
5.2
0.88
0.16
186
Unit
V
250
1000
350
5
±100
mΩ
V
nA
Max
Unit
µA
nF
nC
122
18
12
40
900
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 22A, R G = 5Ω
1423
Test Conditions
ns
155
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 22A, R G = 5Ω
µJ
623
µJ
779
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 22A
IS = - 22A
VR = 500V
diS/dt = 100A/µs
Max
24
Source - Drain diode ratings and characteristics
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery Z
trr
Reverse Recovery Time
3
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 22A
R G = 5Ω
Rise Time
Typ
Max
22
17
1.3
10
Unit
A
Tj = 25°C
1170
V
V/ns
ns
Tj = 25°C
16.28
µC
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 22A di/dt ≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C
APT website – http://www.advancedpower.com
2–6
APTM100TDU35P– Rev 0 September, 2004
Symbol
BVDSS
APTM100TDU35P
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case
Min
IGBT
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M6
2500
-40
-40
-40
3
Typ
Max
0.32
150
125
100
5
250
Unit
°C/W
V
°C
N.m
g
Package outline
APT website – http://www.advancedpower.com
3–6
APTM100TDU35P– Rev 0 September, 2004
5 places (3:1)
APTM100TDU35P
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.3
0.1
0.05
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
60
80
7V
40
6.5V
30
6V
20
5.5V
10
VDS > ID(on)xRDS (on)MAX
250µs pulse test @ < 0.5 duty cycle
70
ID, Drain Current (A)
60
50
40
30
TJ=25°C
20
10
5V
0
0
5
10
15
20
25
TJ=125°C
30
0
VGS=10V
1.1
VGS=20V
1
3
4
5
6
7
8
9
25
Normalized to
VGS=10V @ 11A
1.2
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS , Drain to Source Voltage (V)
1.4
TJ=-55°C
0
0.9
0.8
20
15
10
5
0
0
10
20
30
40
ID, Drain Current (A)
50
60
25
50
75
100
125
150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4–6
APTM100TDU35P– Rev 0 September, 2004
I D, Drain Current (A)
VGS=15, 10&8V
50
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=11A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
100µs
limited by RDSon
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
100
1.2
1.0
0.9
0.8
0.7
1ms
10
Single pulse
TJ=150°C
10ms
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
10000
Ciss
Coss
1000
Crss
100
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
14
I D=22A
TJ=25°C
12
VDS=200V
VDS=500V
10
V DS =800V
8
6
4
2
0
0
50
APT website – http://www.advancedpower.com
100
150
200
250
Gate Charge (nC)
5–6
APTM100TDU35P– Rev 0 September, 2004
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100TDU35P
APTM100TDU35P
Delay Times vs Current
Rise and Fall times vs Current
80
180
t d(off)
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
70
140
60
120
tr and tf (ns)
V DS=670V
RG=5Ω
T J=125°C
L=100µH
100
80
60
40
50
40
tr
30
20
td(on)
10
20
0
0
0
10
20
30
40
50
0
10
ID, Drain Current (A)
50
4
Eon
V DS=670V
RG=5Ω
T J=125°C
L=100µH
2
1.5
Switching Energy (mJ)
Switching Energy (mJ)
20
30
40
I D, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
2.5
E off
1
0.5
0
VDS=670V
ID=22A
TJ=125°C
L=100µH
3.5
3
2.5
Eoff
2
Eon
1.5
1
0.5
0
0
10
20
30
40
50
0
5
10
ID, Drain Current (A)
15
20
25
30
35
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
250
225
200
175
150
125
100
75
I DR, Reverse Drain Current (A)
Frequency (kHz)
tf
ZVS
ZCS
VDS=670V
D=50%
RG=5Ω
T J=125°C
T C=75°C
50
25
0
5
8
Hard
switching
10
13
15
18
ID, Drain Current (A)
20
100
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM100TDU35P– Rev 0 September, 2004
td(on) and td(off) (ns)
160
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