DMN1053UCP4 N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION Product Summary (Typ.@ VGS = 4.5V, TA = +25°C) BVDSS RDS(ON) ID 12V 38mΩ 4.0A Features TR-MOS Technology with the Lowest RDS(ON) CSP with Footprint 0.81mm × 0.81mm (Typ.) Height = 0.29mm for Low Profile Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation MOSFET is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high-efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per Mechanical Data footprint area. Case: X3-DSN0808-4 Terminal Connections: See Diagram Below Terminal Finish: Matte Tin Annealed Over Copper Pillar UBM: 203μm Applications DC-DC Converters Battery Management Load Switch Top-View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number DMN1053UCP4-7 Notes: Case X3-DSN0808-4 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 4B = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: E = 2017) M or M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMN1053UCP4 Document number: DS38789 Rev. 2 - 2 Mar 3 2018 F Apr 4 May 5 2019 G Jun 6 1 of 7 www.diodes.com 2020 H Jul 7 Aug 8 2021 I Sep 9 Oct O 2022 J Nov N Dec D July 2017 © Diodes Incorporated DMN1053UCP4 Maximum Ratings Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +70°C TA = +25°C TA = +70°C NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION Continuous Source Current @ VGS = 4.5V (Note 5) Continuous Source Current @ VGS = 4.5V (Note 6) Value 12 8 2.7 2.2 ID A 4.0 3.2 8 0.74 15 ID Pulsed Drain Current (Pulse Duration 10μs, Duty Cycle ≤1%) Continuous Source-Drain Diode Current Pulse Diode Forward Current Unit V V IDM IS ISM A A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Symbol PD RJA PD RJA TJ, TSTG Value 0.74 167 1.34 93 -55 to +150 Unit W °C/W W °C/W °C . Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Body Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Charge Body Diode Reverse Recovery Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 12 - - 1.0 100 V µA nA VGS = 0V, ID = 250μA VDS = 9.6V, VGS = 0V VGS = 8V, VDS = 0V VGS(TH) 0.35 0.5 0.7 V RDS(ON) - 38 42 45 49 57 82 42 50 53 65 80 110 mΩ |Yfs| VSD - 6.0 0.7 1 S V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 1.0A VGS = 2.5V, ID = 1.0A VGS = 2.1V, ID = 1.0A VGS = 1.8V, ID = 0.5A VGS = 1.5V, ID = 0.2A VGS = 1.2V, ID = 0.1A VDS = 6V, IS = 1.0A VGS = 0V, IS = 1.0A Ciss Coss Crss Rg Qg Qgs - 612 91 84 1.3 7.2 0.6 908 127 126 2.6 15 - pF pF pF Ω nC nC Qgd - 1.3 - nC tD(ON) tR tD(OFF) tF QRR tRR - 3.6 6.0 13.5 2 0.7 6.4 10 14 32 4 1.5 14 ns ns ns ns nC ns VDS = 6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 6V, ID = 1.0A VDD = 6V, ID = 1.0A VGEN = 4.5V, RG = 1Ω, RL = 6Ω IF = 1A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN1053UCP4 Document number: DS38789 Rev. 2 - 2 2 of 7 www.diodes.com July 2017 © Diodes Incorporated DMN1053UCP4 10 10.0 VGS = 4.5V VDS=5V VGS = 4.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 VGS = 3.0V VGS = 1.3V VGS = 2.5V 6.0 VGS = 2.0V VGS = 1.8V 4.0 VGS = 1.5V 2.0 6 4 TJ = 150℃ TJ = 85℃ TJ = 25℃ TJ = 125℃ 2 VGS = 1.0V TJ = -55℃ 0 0.0 0 0.5 1 1.5 2 2.5 0.4 3 0.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.065 0.06 0.055 VGS = 1.8V 0.05 VGS = 2.1V 0.045 VGS = 2.5V 0.04 VGS = 4.5V 0.035 0.03 0.025 0 2 4 6 8 0.05 TJ = 150℃ TJ = 85℃ 0.045 TJ = 25℃ 0.04 0.035 TJ = -55℃ 0.03 0.025 2 4 6 8 10 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMN1053UCP4 Document number: DS38789 Rev. 2 - 2 1.6 ID = 1.0A ID = 0.5A 0.04 0.02 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 0.02 0 1.4 0.06 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS= 4.5V 0.055 1.2 0.08 10 0.065 TJ = 125℃ 1 0.1 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.06 0.8 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION 8.0 3 of 7 www.diodes.com 1.5 1.4 VGS = 2.1V, ID = 1A 1.3 1.2 1.1 VGS = 1.8V, ID = 0.5A 1 0.9 VGS = 2.5V, ID = 1A 0.8 VGS = 4.5V, ID = 1A 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature July 2017 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.8 0.08 0.07 VGS = 2.1V, ID = 1A 0.06 VGS = 1.8V, ID = 0.5A 0.05 0.04 VGS = 2.5V, ID = 1A 0.03 VGS = 4.5V, ID = 1A 0.7 0.6 ID = 1mA 0.5 ID = 250μA 0.4 0.3 0.2 0.02 -50 -25 0 25 50 75 100 125 -50 150 10 0 25 50 75 100 125 150 100000 150℃ IDSS, LEAKAGE CURRENT (nA) VGS = 0V 8 IS, SOURCE CURRENT (A) -25 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 6 4 TJ = 150℃ TJ = 85℃ TJ = 125℃ 2 TJ = 25℃ 10000 125℃ 1000 85℃ 100 10 25℃ 1 TJ = -55℃ 0.1 0 0 0.3 0.6 0.9 1.2 0 1.5 2 4 6 8 10 12 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Drain-Source Leakage Current vs. Voltage VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 100 10000 RDS(ON) Limited 1000 ID, DRAIN CURRENT (A) f=1MHz CT, JUNCTION CAPACITANCE (pF) NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION DMN1053UCP4 Ciss Coss 100 PW =100µs PW =1ms 10 PW =10ms 1 PW =100ms PW =1s 0.1 Crss TJ(Max)=150℃ PW =10s TC=25℃ Single Pulse DC DUT on 1*MRP board VGS= 4.5V 0.01 10 0 2 4 6 8 10 12 10 100 Figure 12. SOA, Safe Operation Area Figure 11. Typical Junction Capacitance Document number: DS38789 Rev. 2 - 2 1 VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) DMN1053UCP4 0.1 4 of 7 www.diodes.com July 2017 © Diodes Incorporated DMN1053UCP4 NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION PPK, PEAK TRANSIENT POWER (W) 400 Single Pulse RθJA=177℃/W RθJA(t)=RθJA * r(t) TJ-TA=P * RθJA(t) 300 200 100 0 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Single Pulse Maximum Power Dissipation r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJA(t) = r(t) * RθJA RθJA= 177℃/W Duty Cycle, D = t1 / t2 D=0.005 D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure14. Transient Thermal Resistance DMN1053UCP4 Document number: DS38789 Rev. 2 - 2 5 of 7 www.diodes.com July 2017 © Diodes Incorporated DMN1053UCP4 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION X3-DSN0808-4 D e Ø b (4x) e E Dim A Pin1 0.2510 0.2890 0.2700 A1 0.0360 0.0440 0.0400 A2 b 0.2150 0.2450 0.2300 0.1836 0.2244 0.2040 D 0.7900 0.8300 0.810 E 0.7900 0.8300 0.810 e A2 X3-DSN0808-4 Min Max Typ - - 0.400 All Dimensions in mm A Seating Plane A1 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X3-DSN0808-4 Ø D (4x) C Dimensions C D Value (in mm) 0.400 0.2040 C DMN1053UCP4 Document number: DS38789 Rev. 2 - 2 6 of 7 www.diodes.com July 2017 © Diodes Incorporated DMN1053UCP4 IMPORTANT NOTICE NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2017, Diodes Incorporated www.diodes.com DMN1053UCP4 Document number: DS38789 Rev. 2 - 2 7 of 7 www.diodes.com July 2017 © Diodes Incorporated