RoHS MBR2070CT-20100CT MBR2070CT-20100CT FEATURES · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications ELECTRICAL CHARACTERISTICS (Tamb=25℃ Characteristic Symbol Peak Repetitive Reverse Voltage VRRM R T Working Peak Reverse Voltage VRWM DC Blocking Voltage VR PMS Reverse Voltage VR(RMS) C E L Average Rectified Output Current (Note 1) @ TC=125℃ Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load 1. ANODE 2. CATHODE 3. ANODE O 123 C 2070CT IC 2080CT 2090CT 20100CT 70 80 90 100 V 49 56 63 70 V N unless otherwise specified) MBR O MBR MBR MBR Unit IO 20 A IFSM 150 A (JEDEC Method) Forward Voltage Drop J E D T ,. L TO-220 SCHOTTKY BARRIER RECTIFIER E Peak Reverse Current @ IF=10A, TC=125℃ @ IF=10A, TC= 25℃ @ IF=20A, TC=125℃ 0.75 0.85 0.85 0.95 0.15 150 VFM @ IF=20A, TC=25℃ at Rated DC Blocking Voltage @ TC= 25℃ @ TC=125℃ Typical Junction Capacitance (Note 2) W Operating and Storage Temperature Range IRM V mA Cj 1000 pF Tj, TSTG -65 to +150 ℃ Notes: 1. Thermal resistance junction to case mounted heat sink. 2. Measured at 1.OMHz and applied reverse voltage of 4.0V DC. WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]