CSD25301W1015 www.ti.com SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010 P-Channel NexFET™ Power MOSFET Check for Samples: CSD25301W1015 FEATURES 1 • • • • • • • PRODUCT SUMMARY Ultra Low Qg and Qgd Small Footprint Low Profile 0.62mm Height Pb Free RoHS Compliant Halogen Free CSP 1 × 1.5 mm Wafer Level Package VDS Drain to Source Voltage –20 V Qg Gate Charge Total (4.5V) 1.9 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) nC 175 mΩ VGS = –2.5V 80 mΩ VGS = –4.5V 62 mΩ Voltage Threshold –0.75 V ORDERING INFORMATION APPLICATIONS • • • 0.4 VGS = –1.5V Battery Management Load Switch Battery Protection Device Package CSD25301W1015 1 × 1.5 Wafer Level Package Media 7-inch reel Qty Ship 3000 Tape and Reel ABSOLUTE MAXIMUM RATINGS DESCRIPTION TA = 25°C unless otherwise stated The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Top View D D S S S G VALUE UNIT VDS Drain to Source Voltage –20 V VGS Gate to Source Voltage ±8 V ID Continuous Drain Current, TC = 25°C(1) –2.2 A IDM Pulsed Drain Current, TA = 25°C(2) –8.8 A PD Power Dissipation(1) 1.5 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C (1) RqJA = 85°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤300ms, duty cycle ≤2% P0099-01 RDS(ON) vs VGS Gate Charge 6 ID = −1A 250 5 −VG − Gate Voltage − V RDS(on) − On-State Resistance − mΩ 300 200 TC = 125°C 150 100 50 ID = −1A VDS = −10V 4 3 2 1 TC = 25°C 0 0 1 2 3 4 −VGS − Gate to Source Voltage − V 5 6 G006 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 Qg − Gate Charge − nC G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009–2010, Texas Instruments Incorporated CSD25301W1015 SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = –250mA IDSS Drain to Source Leakage Current VGS = 0V, VDS = –16V IGSS Gate to Source Leakage Current VDS = 0V, VGS = ±8V VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = –250mA RDS(on) Drain to Source On Resistance gfs Transconductance –20 –0.4 V –1 mA –100 nA –0.75 –1 V VGS = –1.5V, ID = –1A 175 220 mΩ VGS = –2.5V, ID = –1A 80 100 mΩ VGS = –4.5V, ID = –1A 62 75 mΩ VDS = –10V, ID = –1A 5.8 S Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance Qg Gate Charge Total (–4.5V) Qgd Gate Charge Gate to Drain Qgs Gate Charge Gate to Source Qg(th) Gate Charge at Vth QOSS Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tf Fall Time VGS = 0V, VDS = –10V, f = 1MHz VDS = –10V, ID = –1A VDS = –9.8V, VGS = 0V VDS = –10V, VGS = –4.5V, ID = –1A RG = 20Ω 210 270 pF 90 120 pF 30 40 pF 1.9 2.5 nC 0.4 nC 0.35 nC 0.17 nC 1.7 nC 4 ns 2 ns 29 ns 12 ns Diode Characteristics VSD Diode Forward Voltage IS = –1A, VGS = 0V –0.75 –1 V Qrr Reverse Recovery Charge Vdd= –9.8V, IF = –1A, di/dt = 200A/ms 0.9 nC trr Reverse Recovery Time Vdd= –9.8V, IF = –1A, di/dt = 200A/ms 8.2 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER R qJA 2 MAX UNIT Thermal Resistance Junction to Ambient (Minimum Cu area) 270 °C/W Thermal Resistance Junction to Ambient (1 in2 Cu area) 105 °C/W Submit Documentation Feedback MIN TYP Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD25301W1015 CSD25301W1015 www.ti.com SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010 P-Chan 1.0x1.5 CSP TTA MAX Rev1 P-Chan 1.0x1.5 CSP TTA MIN Rev1 Max RqJA = 270°C/W when mounted on minimum pad area of 2 oz. Cu. Max RqJA = 105°C/W when mounted on 1 inch2 of 2 oz. Cu. M0155-01 M0156-01 TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) ZqJA – NormalizedThermal Impedance 10 1 0.5 0.3 0.1 0.01 0.1 0.05 Duty Cycle = t1/t2 0.02 0.01 P t1 t2 0.001 0.0001 0.00001 RqJA = 216°C/W (min Cu) TJ = P x ZqJA x RqJA Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 1k tp – Pulse Duration–s G012 Figure 1. Transient Thermal Impedance Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD25301W1015 3 CSD25301W1015 SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 5 10 VDS = −5V VGS = −2V 8 VGS = −4.5V −ID − Drain Current − A −ID − Drain Current − A 9 7 6 5 VGS = −3V 4 VGS = −1.5V VGS = −2.5V 3 2 4 3 TC = 125°C 2 TC = 25°C 1 TC = −55°C 1 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.75 3.0 −VDS − Drain to Source Voltage − V C − Capacitance − pF −VG − Gate Voltage − V 2.00 G002 f = 1MHz VGS = 0V 250 4 3 2 200 COSS = CDS + CGD CISS = CGD + CGS 150 100 CRSS = CGD 50 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 Qg − Gate Charge − nC 0 0 5 10 15 20 −VDS − Drain to Source Voltage − V G003 Figure 4. Gate Charge G004 Figure 5. Capacitance 1.0 300 RDS(on) − On-State Resistance − mΩ −VGS(th) − Threshold Voltage − V 1.75 300 ID = −1A VDS = −10V 1 ID = −250µA 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 ID = −1A 250 200 TC = 125°C 150 100 50 TC = 25°C 0 −25 25 75 125 175 TC − Case Temperature − °C 0 1 2 3 4 5 −VGS − Gate to Source Voltage − V G005 Figure 6. Threshold Voltage vs. Temperature 4 1.50 Figure 3. Transfer Characteristics 6 0.0 −75 1.25 −VGS − Gate to Source Voltage − V G001 Figure 2. Saturation Characteristics 5 1.00 6 G006 Figure 7. On Resistance vs. Gate Voltage Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD25301W1015 CSD25301W1015 www.ti.com SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 10 1.4 ID = −1A VGS = −4.5V −ISD − Source to Drain Current − A Normalized On-State Resistance 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0.0 −75 1 TC = 125°C 0.1 TC = 25°C 0.01 0.001 0.0001 −25 25 75 125 TC − Case Temperature − °C 175 0.0 0.8 1.0 1.2 G008 2.5 −ID − Drain Current − A −ID − Drain Current − A 0.6 Figure 9. Typical Diode Forward Voltage 100 10 1ms 1 10ms 0.01 0.1 0.4 −VSD − Source to Drain Voltage − V G007 Figure 8. On Resistance vs. Temperature 0.1 0.2 Area Limited by RDS(on) 100ms Single Pulse RθJA = 216°C/W (min Cu) 1 2.0 1.5 1.0 0.5 DC 10 100 −VDS − Drain To Source Voltage − V Figure 10. Maximum Safe Operating Area 0.0 −50 −25 0 25 50 75 100 125 150 175 TC − Case Temperature − °C G009 G011 Figure 11. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD25301W1015 5 CSD25301W1015 SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010 www.ti.com MECHANICAL DATA CSD25301W1015 Package Dimensions Pin 1 Mark 1 Solder Ball Ø 0.31 ±0.075 2 1 A B 1.50 B 1.00 +0.00 –0.10 0.50 A 2 Pin 1 Mark C C 1.00 +0.00 –0.10 0.50 Side View Bottom View 0.04 0.62 Max 0.38 Top View 0.62 Max Seating Plate Front View M0157-01 NOTE: All dimensions are in mm (unless otherwise specified) Pinout 6 POSITION DESIGNATION C1, C2 Drain A1 Gate A2, B1, B2 Source Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD25301W1015 CSD25301W1015 www.ti.com SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010 Land Pattern Recommendation Ø 0.25 1 2 1.00 0.50 A B C 0.50 M0158-01 NOTE: All dimensions are in mm (unless otherwise specified) Tape and Reel Information 4.00 ±0.10 Ø 1.50 ±0.10 4.00 ±0.10 Ø 0.60 0.86 ±0.05 +0.05 –0.10 1.65 ±0.05 2° Max 3.50 ±0.05 8.00 +0.30 –0.10 1.75 ±0.10 2.00 ±0.05 0.254 ±0.02 1.19 ±0.05 2° Max M0159-01 NOTE: All dimensions are in mm (unless otherwise specified) Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD25301W1015 7 CSD25301W1015 SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010 www.ti.com REVISION HISTORY Changes from Original (August 2009) to Revision A • Replaced incorrect label: RqJC with RqJA in the THERMAL CHARACTERISTICS table. ...................................................... 2 Changes from Revision A (August 2010) to Revision B • 8 Page Page Deleted the Package Marking Information section ............................................................................................................... 7 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD25301W1015 PACKAGE MATERIALS INFORMATION www.ti.com 17-May-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device CSD25301W1015 Package Package Pins Type Drawing SPQ DSBGA 3000 YZC 6 Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 180.0 8.4 Pack Materials-Page 1 1.09 B0 (mm) K0 (mm) P1 (mm) 1.56 0.65 4.0 W Pin1 (mm) Quadrant 8.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 17-May-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CSD25301W1015 DSBGA YZC 6 3000 210.0 185.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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