FGA90N30 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA90N30 provides low conduction and switching loss. FGA90N30 offers the optimum solution for PDP applications where low condution loss is essential. • Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 20A • High Input Impedance TO-3P G C E Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted Description FGA90N30 Units VCES Collector-Emitter Voltage 300 V VGES Gate-Emitter Voltage ± 30 V IC Collector Current ICM Pulsed Collector Current PD @ TC = 25°C 90 A @ TC = 25°C 220 A Maximum Power Dissipation @ TC = 25°C 219 W Maximum Power Dissipation @ TC = 100°C 87 W (Note 1) TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 °C Notes: (1) Repetitive test , pulse width = 100usec , Duty = 0.5 * Ic_pulse limited by max Tj Thermal Characteristics Typ. Max. Units RθJC(IGBT) Symbol Thermal Resistance, Junction-to-Case for IGBT Parameter -- 0.57 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W ©2006 Fairchild Semiconductor Corporation FGA90N30 Rev. A 1 www.fairchildsemi.com FGA90N30 300V PDP IGBT September 2006 Device Marking Device Package Reel Size Tape Width Quantity FGA90N30 FGA90N30 TO-3P -- -- 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250μA 300 -- -- V ΔBVCES/ ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250μA -- 0.6 -- V/°C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 100 μA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 250 nA 2.5 4.0 5.0 V IC = 20A, VGE = 15V -- 1.1 1.4 V IC = 90A, VGE = 15V -- 1.9 -- V IC = 90A, VGE = 15V, TC = 125°C -- 2.0 -- V -- 1700 - pF VCE = 30V, VGE = 0V, f = 1MHz -- 290 - pF -- 80 - pF On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time -- 30 -- ns tr Rise Time -- 200 -- ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss VCC = 200V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25°C -- 110 -- ns -- 140 300 ns -- 0.15 -- mJ -- 0.45 -- mJ Ets Total Switching Loss -- 0.6 -- mJ td(on) Turn-On Delay Time -- 30 -- ns tr Rise Time -- 210 -- ns td(off) Turn-Off Delay Time -- 110 -- ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss -- 0.72 -- mJ Ets Total Switching Loss -- 0.88 -- mJ Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge VCC =200V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 125°C VCE = 200V, IC = 20A, VGE = 15V 2 FGA90N30 Rev. A -- 200 -- ns -- 0.16 -- mJ -- 87 130 nC -- 12 18 nC -- 38 57 nC www.fairchildsemi.com FGA90N30 300V PDP IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 100 Figure 2. Typical Output Characteristics 100 o 20V o TC = 25 C 12V 12V 10V 15V 80 80 Collector Current, I [A] 10V C Collector Current, IC [A] TC = 125 C 20V 15V 60 V GE= 8 V 40 60 V GE= 8 V 40 20 20 0 0 0 1 2 3 4 5 0 6 1 Figure3. Typical Saturation Voltage Characteristics 4 5 6 C o m m o n E m itte r V CE = 2 0V 100 o TC = 60 40 o 25 C o TC = 125 C C Collector Current, I [A] Tc = 25 C o Tc = 125 C Collector Current, IC [A] 3 Figure 4. Transfer characteristics C o m m o n E m itte r V Ge = 15V 80 2 C o lle c t o r - E m it te r V o lt a g e , V C E [ V ] C o lle c to r -E m itte r V o lta g e , V C E [V ] 10 20 0 1 0 1 2 3 0 2 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 8 10 6 CE 2 .0 90A 1 .8 1 .6 1 .4 40A 1 .2 20A 1 .0 Ic= 1 0 A 0 .8 C o m m o n E m it t e r o TC = 25 C [V] C o m m o n E m it t e r V GE = 15V 2 .2 Collector - Emitter Voltage, V [V] CE 6 Figure 6. Saturation Voltage vs. VGE 2 .4 Collector-Emitter Voltage, V 4 G a te - E m itte r V o lta g e , V G E [V ] C o lle c to r - E m itte r V o lta g e , V C E [V ] 5 4 3 90A 2 20A 1 0 .4 40A 10A 0 .6 0 25 50 75 100 125 4 8 12 16 20 o C a s e T e m p e ra tu re , T C ( C ) G a t e - E m it t e r V o lt a g e , V G E [ V ] 3 FGA90N30 Rev. A www.fairchildsemi.com FGA90N30 300V PDP IGBT Typical Performance Characteristics (Continued) Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Charaacteristics 6 C o m m o n E m it t e r o TC = 125 C C ie s 4 Capacitance [pF] Collector - Emitter Voltage, V CE [V] 5 3 90A 2 20A 40A 1000 Coes C re s 1 C o m m o n E m itte r V GE = 0V , f = 1M H z 100 10A o TC = 25 C 0 4 8 12 16 20 0 .1 1 10 C o lle c to r - E m itte r V o lta g e , V C E [V ] G a te - E m itte r V o lta g e , V G E [V ] Figure 9. Gate Charge Characteristics Figure 10. SOA Characteristics 15 Ic M A X (P u ls e d ) C o m m o n E m it t e r RL = 10 ohm Collector Current, Ic [A] [V] GE Gate-Emitter Voltage, V Vcc = 200V 5 1m s 10 D C O p e ra tio n 1 S in g le N o n re p e titive o P u lse T c = 2 5 C C u rve s m u s t b e d e ra te d lin e a rly w ith in c re a s e in te m p e ra tu re 0 .1 0 .0 1 0 10 100μs Ic M A X (C o n tin u o u s ) 10 0 50μs 100 o TC = 25 C 20 30 40 50 60 70 80 0 .1 90 1 G a te C h a rg e , Q g [n C ] 10 100 1000 C o lle c to r - E m itte r V o lta g e , V C E [V ] Figure 11. Turn-On Characteristics vs. Gate Resistance Figure 12. Turn-Off Characteristics vs. Gate Resistance 1000 1000 C o m m o n E m itte r V CC = 20 0 V , V GE = 15V IC = 2 0 A o T C = 25 C o tr Switching Time [ns] Switching Time [ns] T C = 125 C 100 td (o n ) tf 100 td (o ff) C o m m o n E m itte r V CC = 20 0 V , V GE = 15 V IC = 2 0 A o TC = 25 C o TC = 125 C 10 10 0 20 40 60 80 0 100 40 60 80 100 G a t e R e s is t a n c e , R G [ Ω ] G a te R e s is ta n c e , R G [ Ω ] 4 FGA90N30 Rev. A 20 www.fairchildsemi.com FGA90N30 300V PDP IGBT Typical Performance Characteristics (Continued) Figure 13. Turn-On Characteristics vs. Collector Current Figure 14.Turn-Off Characteristics vs. Collector Current 1000 1000 C o m m o n E m it t e r V GE = 15V , R G = 10Ω o TC = 25 C tf o Switching Time [ns] Switching Time [ns] TC = 125 C tr 100 td (o n ) 100 td ( o f f ) C o m m o n E m it te r V GE = 15 V , R G = 10 Ω o TC = 25 C o TC = 125 C 10 10 0 20 40 60 80 0 100 20 40 60 80 100 C o lle c to r C u r r e n t , Ic [A ] C o lle c to r C u r r e n t , Ic [ A ] Figure 15. Switching Loss vs. Gate Resistance Figure 16.Switching Loss vs. Collector Current 10 1 Switching Loss [mJ] Switching Loss [mJ] E o ff Eon 0 .1 C o m m o n E m itte r V CC = 200V , V GE = 15V IC = 2 0 A 1 E o ff 0 .1 C o m m o n E m itte r V GE = 1 5 V , R G = 1 0 Ω Eon o TC = 25 C o TC = 25 C o TC = 125 C o 0 .0 1 TC = 125 C 0 .0 1 0 20 40 60 80 100 0 G a te R e s is t a n c e , R G [ Ω ] 20 40 60 80 100 C o lle c to r C u r r e n t , Ic [A ] Figure 17. Turn-Off SOA Figure 1000 Collector Current, IC [A] Safe O perating Area o V G E = 20V , T C = 100 C 100 10 1 10 100 1000 C ollector-E m itter V oltage, V C E [V ] 5 FGA90N30 Rev. A www.fairchildsemi.com FGA90N30 300V PDP IGBT Typical Performance Characteristics FGA90N30 300V PDP IGBT Typical Performance Characteristics (Continued) Figure 18. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.1 0.2 0.1 0.05 0.01 0.02 Pdm 0.01 t1 t2 single pulse 1E-3 1E-5 1E-4 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] 6 FGA90N30 Rev. A www.fairchildsemi.com TO-3P 15.60 ±0.20 3.80 ±0.20 +0.15 3.50 ±0.20 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 1.50 –0.05 16.50 ±0.30 9.60 ±0.20 19.90 ±0.20 13.90 ±0.20 ø3.20 ±0.10 4.80 ±0.20 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 7 FGA90N30 Rev. A 0.60 –0.05 www.fairchildsemi.com FGA90N30 300V PDP IGBT Mechanical Dimensions TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20