IRF IRD3CH42DB6 Industrial motor drive Datasheet

IRD3CH42DB6
Ultra Fast-Soft Recovery Diode
VRRM = 1200V
IF (Nominal) = 75A
TJ (max) = 150°C
VF typ = 2.3V
C
Applications
A
 Industrial Motor Drive
 Uninterruptible Power Supply
 Welding
 Solar Inverter
Features
Low VF
Ultra Fast-Soft Recovery
Chip Type
IRD3CH42DB6
VRRM
1200V
C
A
Cathode
Anode
Benefits
High efficiency in a wide range of applications
Performance optimized for IGBT anti parallel diode
IF(Nominal)
75A
Die Size
2
6.53 x 6.53mm
Package Type
Wafer
Mechanical Parameters
Die Size
Anode Pad Size
Area Total / Active
Thickness
Wafer Size
Minimum Street Width
Flat Position
Maximum-Possible Chips per Wafer
Passivation Frontside
Front Metal-Anode Pad
Backside Metal
Die Bond
Reject Ink Dot Size
Recommended Storage Environment
1
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© 2014 International Rectifier
6.53 x 6.53
mm2
5.08 x 5.10
42.6/29.4
330
µm
150
mm
100
µm
0
Degree
331pcs
Silicon Nitride
Al-1%Si (3µm)
Cr /Ni /Ag
Electrically conductive epoxy or solder
0.25mm min (black, center)
Store in original container, in dry Nitrogen,
<6 months at an ambient temperature of 23°C
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IRD3CH42DB6
Maximum Ratings
Parameter
Reverse Voltage
Operating Junction and Storage Temperature
VRRM
TJ, TSTG
Max.
1200
-40 to +150
Units
V
°C
Static Characteristics (Tested on wafers) . TJ=25°C
Parameter
VRRM
VFM
IRM
Maximum Reverse Breakdown Voltage
Maximum Forward Voltage
Maximum Reverse Leakage Current
Min.
Typ. Max. Units
1200
–––
–––
–––
–––
–––
–––
1.63
20
Conditions
IRRM= 150µA,TJ = 25°C 
TJ = 25°C, IF = 10A,
µA TJ = 25°C, VRRM = 1200V
V
Electrical Characteristics (Not subject to production test)
Parameter
VF
Forward Voltage
IR
Leakage Current
Min.
Typ. Max. Units
–––
2.3
2.7
V
–––
–––
–––
2.5
–––
–––
–––
V
µA
mA
1.5
1.7
TJ
Conditions
25°C IF = 75A , TJ = 25°C 
150°C IF = 75A , TJ = 150°C 
25°C VR = 1200V, TJ = 25°C 
150°C VR = 1200V, TJ = 150°C 
Switching Characteristics (Inductive Load-Not subject to production test)
Parameter
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irr
Peak Reverse Recovery Current
Err
Reverse Recovery Energy
S
Softness (tb/ta)
2
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Min.
—
—
—
—
—
—
—
—
—
—
© 2014 International Rectifier
Typ. Max. Units
285
340
5.8
11
32
51
3.5
6.4
2.4
1.4
—
—
—
—
—
—
—
—
—
—
ns
µC
A
mJ
TJ
25°C
150°C
25°C
150°C
25°C
150°C
25°C
150°C
25°C
150°C
Conditions 
IF = 75A , di/dt=400A/µs,
VRR = 600V
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IRD3CH42DB6
225
600
200
IF, Instantaneous Forward Current(A)
500
-40°C
25°C
150°C
175
IF = 150A
400
150
trr - (ns)
IF = 75A
125
IF = 38A
300
100
200
75
50
V
= 600V
R
T J = 150°C ---------T = 25°C _____
J
100
25
0
200
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
400
4.5
600
800
1000
dif/dt - (A/µs)
VF, Forward Voltage Drop (V)
Fig 1. Typical Forward Charateristic
Fig 2. Typical trr vs. di/dt
25
120
V R = 600V
T = 150°C ---------J
_____
T J = 25°C
IF = 150A
20
100
IF = 75A
IF = 75A
80
IF = 38A
Irr - (A)
Qrr - (C)
15
IF = 150A
IF = 38A
60
10
40
V
5
0
0
200
400
600
800
1000
dif/dt - (A/µs)
Fig 3. Typical Qrr vs. di/dt
3
= 600V
R
T = 150°C ---------J
_____
T J = 25°C
20
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200
400
600
800
1000
dif/dt - (A/µs)
Fig 4. Typical Irr vs. di/dt
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IRD3CH42DB6
14
IF = 150A
12
IF = 75A
Err - (mJ)
10
IF = 38A
8
3
t rr
tb
ta
6
4
2
V
2
R
= 600V
Q rr
I RRM
T = 150°C ---------J
_____
T = 25°C
J
400
600
800
0.75 I RRM
1000
dif/dt - (A/µs)
Fig 5. Typical Err vs. di/dt
4
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0.5 I RRM
di(rec)M/dt
0
200
4
© 2014 International Rectifier
1
di f /dt
Fig 6. Reverse Recovery Waveform
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IRD3CH42DB6
Die Drawing
NOTES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
2. CONTROLLING DIMENSION: MILLIMETERS
3. DIE WIDTH AND LENGTH TOLERANCE: + 0/ -0.0508 [+ 0/ -.002]
4. DIE THICKNESS = 0.330 [.013]
5
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IRD3CH42DB6
Additional Testing and Screening
For Customers requiring product supplied as Known Good Die (KGD) or requiring specific die level testing, please contact your local IR Sales.
Shipping
Three shipping options are offered.

Un-sawn wafer

Die in waffle pack (consult the IR Die Sales team for availability)

Die on film (consult the IR Die Sales team for availability)
Tape and Reel is also available for some products. Please consult your local IR sales office or email http://die.irf.com for
additional information.
Please specify your required shipping option when requesting prices and ordering Die product. If not specified, Un-sawn
wafer will be assumed.
Handling
 Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263.

Product must be handled only in a class 10,000 or better-designated clean room environment.

Singulated die are not to be handled with tweezers. A vacuum wand with a non-metallic ESD protected tip
should be used.
Wafer/Die Storage
 Proper storage conditions are necessary to prevent product contamination and/or degradation after shipment.

Un-sawn wafers and singulated die can be stored for up to 12 months when in the original sealed packaging at
room temperature (45% +/- 15% RH controlled environment).

Un-sawn wafers and singulated die that have been opened can be stored when returned to their containers and
placed in a Nitrogen purged cabinet, at room temperature (45% +/- 15% RH controlled environment).

Note: To reduce the risk of contamination or degradation, it is recommended that product not being used in the
assembly process be returned to their original containers and resealed with a vacuum seal process.

Sawn wafers on a film frame are intended for immediate use and have a limited shelf life.

Die in Surf Tape type carrier tape are intended for immediate use and have a limited shelf life. This is primarily
due to the nature of the adhesive tape used to hold the product in the carrier tape cavity. This product can be
stored for up to 30 days. This applies whether or not the material has remained in its original sealed container.
Further Information
For further information please contact your local IR Sales office or email your enquiry to
http://die.irf.com
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
6
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© 2014 International Rectifier
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April 09, 2014
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