Spec. No. : C990F3 Issued Date : 2015.12.24 Revised Date : Page No. : 1/ 9 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN4N65BF3 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C RDS(ON)@VGS=10V, ID=2A 650V 4A 2.5A 2Ω(typ) Features • Low On Resistance • Simple Drive Requirement • Fast Switching Characteristic • Pb-free lead plating and RoHS compliant package Applications • Adapter • Switching Mode Power Supply Symbol Outline TO-263 MTN4N65BF3 G D S G：Gate D：Drain S：Source Ordering Information Device Package Shipping MTN4N65BF3-0-T7-X TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTN4N65BF3 CYStek Product Specification Spec. No. : C990F3 Issued Date : 2015.12.24 Revised Date : Page No. : 2/ 9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Single Pulse Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 1) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature VDS VGS IDM EAS IAS EAR 650 ±30 4* 2.5* 16* 64 4 3.4 mJ A mJ TL 300 °C PD 100 0.8 -55~+150 W W/°C °C ID Tj, Tstg Unit V A *Drain current limited by maximum junction temperature Note : 1.Pulse width limited by maximum junction temperature. 2. IAS=4A, VDD=50V, L=8mH, RG=25Ω, starting TJ=+25℃. 100% tested by conditions of L=8mH, VGS=10V, IAS=2A, VDD=50V. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max MTN4N65BF3 Symbol RθJC RθJA Value 1.25 62.5 Unit °C/W CYStek Product Specification CYStech Electronics Corp. Spec. No. : C990F3 Issued Date : 2015.12.24 Revised Date : Page No. : 3/ 9 Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions 650 2.0 - 0.6 5.3 2.0 4.0 ±100 1 10 2.6 V V/°C V S nA Ω VGS=0V, ID=250μA, Tj=25℃ Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =15V, ID=2A VGS=±30V VDS =650V, VGS =0V VDS =520V, VGS =0V, TC=125°C VGS =10V, ID=2A 18.8 3.3 8.7 10.6 10.2 40 32.8 575 56 32 - nC ID=4A, VDD=520V, VGS=10V ns VDD=325V, ID=4A, VGS=10V, RG=25Ω pF VGS=0V, VDS=25V, f=1MHz 330 1.27 1.5 4 16 - V IS=2A, VGS=0V Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr - μA A ns μC VGS=0V, IF=4A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTN4N65BF3 CYStek Product Specification Spec. No. : C990F3 Issued Date : 2015.12.24 Revised Date : Page No. : 4/ 9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.2 10 BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V,6V ID, Drain Current(A) 8 VGS=5V 6 4 VGS=4.5V 2 1.1 1 0.9 0.8 ID=250μA, VGS=0V 0.7 0.6 0 0 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage(V) 45 -75 50 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) 5 5 4.5 VGS=10V TA=25°C VDS=10V 4 4 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(Ω) -25 Drain Current vs Gate-Source Voltage Static Drain-Source On-State resistance vs Drain Current 3 2 3.5 3 2.5 2 1.5 1 1 0.5 0 0 0.001 0.01 0.1 ID, Drain Current(A) 1 0 10 4 6 VGS , Gate-Source Voltage(V) 8 10 10 14 Ta=25°C VGS=0V IF, Forward Current(A) 12 2 Forward Drain Current vs Source-Drain Voltage Static Drain-Source On-State Resistance vs Gate-Source Voltage RDS(on), Static Drain-Source On-State Resistance(Ω) -50 10 8 6 4 ID=2A 1 Tj=150°C Tj=25°C 0.1 0.01 2 0.001 0 0 MTN4N65BF3 2 4 6 VGS , Gate-Source Voltage(V) 8 10 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source Drain Voltage(V) CYStek Product Specification Spec. No. : C990F3 Issued Date : 2015.12.24 Revised Date : Page No. : 5/ 9 CYStech Electronics Corp. Typical Characteristics(Cont.) Capacitance vs Reverse Voltage Static Drain-Source On-resistance vs Ambient Temperature 1000 Ciss Coss Capacitance-(pF) RDS(on) , Normalized Static Drain-Source On-state Resistance 2.8 100 10 Crss f=1MHz 1 ID=2A, VGS=10V 2.4 2 1.6 1.2 0.8 0.4 RDSON@Tj=25°C : 2Ω typ. 0 0 5 10 15 20 25 VDS , Drain-to-Source Voltage(V) 30 -75 -50 -25 Gate Charge Characteristics Maximum Safe Operating Area 10 Operation in this area is limited by RDS(ON) VDS=130V 10μs 10 VGS, Gate-Source Voltage(V) ID, Drain Current(A) 100 100μs 1ms 10ms 1 100ms DC 0.1 TC=25°C, Tj=150°C, VGS=10V, RθJC=1.25°C/W, single pulse 8 VDS=325V 6 4 VDS=520V 2 ID=4A 0 0.01 1 10 100 VDS, Drain-Source Voltage(V) 0 1000 4 8 12 16 20 Qg, Total Gate Charge(nC) Threshold Voltage vs Junction Tempearture Maximum Drain Current vs Case Temperature 1.4 VGS(th), Normalized Threshold Voltage 5 4.5 ID, Maximum Drain Current(A) 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) 4 3.5 3 2.5 2 1.5 1 VGS =10V, RθJC=1.25°C/W 0.5 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 0 25 50 75 100 125 TC, Case Temperature(°C) MTN4N65BF3 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C990F3 Issued Date : 2015.12.24 Revised Date : Page No. : 6/ 9 CYStech Electronics Corp. Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current Single Pulse Power Rating, Junction to Case 3500 GFS , Forward Transfer Admittance(S) 10 3000 TJ(MAX) =150°C TC=25°C RθJC=1.25°C/W 2500 Power (W) 1 0.1 0.01 0.001 0.01 2000 1500 VDS=15V 1000 Ta=25°C Pulsed 500 0.1 1 ID, Drain Current(A) 10 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.25°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-05 MTN4N65BF3 1.E-04 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C990F3 Issued Date : 2015.12.24 Revised Date : Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension MTN4N65BF3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C990F3 Issued Date : 2015.12.24 Revised Date : Page No. : 8/ 9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN4N65BF3 CYStek Product Specification Spec. No. : C990F3 Issued Date : 2015.12.24 Revised Date : Page No. : 9/ 9 CYStech Electronics Corp. TO-263 Dimension Marking : Device Name Date Code CYS 4N65B □□□□ Style : Pin 1.Gate 2.Drain 3.Source 3-Lead Plastic Surface Mounted Package CYStek Package Code : F3 *:Typical Millimeters Min. Max. 4.470 4.670 0.000 0.150 1.170 1.370 0.710 0.910 1.170 1.370 0.310 0.530 1.170 1.370 10.010 10.310 DIM A A1 B b b1 c c1 D Inches Min. Max. 0.176 0.184 0.000 0.006 0.046 0.054 0.028 0.036 0.046 0.054 0.012 0.021 0.046 0.054 0.394 0.406 DIM E e e1 L L1 L2 L3 V Millimeters Min. Max. 8.500 8.900 *2.540 4.980 5.180 15.050 15.450 5.080 5.480 2.340 2.740 1.300 1.700 5.600 REF Inches Min. Max. 0.335 0.350 *0.100 0.196 0.204 0.593 0.608 0.200 0.216 0.092 0.108 0.051 0.067 0.220 REF Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN4N65BF3 CYStek Product Specification