MP03 XXX 130 Series MP03 XXX 130 Series Phase Control Dual SCR, SCR/Diode Modules Replaces December 1998 version, DS4480-3.0 DS4480-4.0 January 2000 FEATURES KEY PARAMETERS 2000V VDRM ITSM 4000A IT(AV)(per arm) 134A 2500V Visol ■ Dual Device Module ■ Electrically Isolated Package ■ Pressure Contact Construction CIRCUIT OPTIONS ■ International Standard Footprint ■ Alumina (non-toxic) Isolation Medium Code APPLICATIONS HBT Circuit ■ Motor Control ■ Controlled Rectifier Bridges HBP ■ Heater Control ■ AC Phase Control HBN VOLTAGE RATINGS Type Number MP03/130-20 MP03/130-18 MP03/130-16 Repetitive Peak Voltages VDRM VRRM 2000 1800 1600 PACKAGE OUTLINE Conditions Tvj = 125oC IDRM = IRRM = 30mA VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. For full description of part number see "Ordering Instructions" on page 3. Module type code: MP03. See Package Details for futher information. CURRENT RATINGS - PER ARM Parameter Symbol IT(AV) IT(RMS) Mean on-state current RMS value Conditions Halfwave, resistive load Tcase = 75oC Max. Units Tcase = 75oC 134 A Tcase = 85oC 112 A Theatsink = 75oC 114 A Theatsink = 85oC 95 A 210 A 1/10 MP03 XXX 130 Series SURGE RATINGS - PER ARM Parameter Symbol ITSM I 2t Surge (non-repetitive) on-state current I2t for fusing Max. Units 10ms half sine; VR = 0 Tj = 125oC VR = 50% VRRM 4000 A 3200 A 10ms half sine; VR = 0 Tj = 125oC VR = 50% VRRM 80000 A2s 51200 A 2s Max. Units dc 0.21 o C/W halfwave 0.22 o C/W 3 phase 0.23 o C/W Mounting torque = 5Nm with mounting compound 0.05 o Conditions THERMAL & MECHANICAL RATINGS Symbol Rth(j-c) Parameter Thermal resistance - junction to case per Thyristor or Diode Conditions Rth(c-hs) Thermal resistance - case to heatsink per Thyristor or Diode Tvj Virtual junction temperature 125 o C Tsto Storage temperature range -40 to 125 o C Visol Isolation voltage Commoned terminals to base plate AC RMS, 1min, 50Hz C/W 2.5 kV Max. Units 1.90 V DYNAMIC CHARACTERISTICS Symbol Parameter Conditions On-state voltage At 450A, Tcase = 25oC - See Note 1 Peak reverse and off-state current At VRRM/VDRM, Tj = 125oC 30 mA dV/dt Linear rate of rise of off-state voltage To 60% VDRM Tj = 125oC 200* V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 400A Repetitive 50Hz Gate source 20V, 20Ω Rise time 0.5µs, Tj =125oC 100 A/µs VT(TO) Threshold voltage At Tvj = 125oC - See Note 1 1.25 V On-state slope resistance At Tvj = 125oC - See Note 1 1.33 mΩ VTM IRRM/IDRM rT * Higher dV/dt values available, contact factory for particular requirements. Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. 2/10 MP03 XXX 130 Series GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions Typ. Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC - 3.0 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC - 200 mA VGD Gate non-trigger voltage VDRM = 5V, Tcase = 25oC - 0.2 V VFGM Peak forward gate voltage Anode positive with respect to cathode - 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode - 0.25 V VRGM Peak reverse gate voltage - 5.0 V IFGM Peak forward gate current - 4 A PGM Peak gate power - 16 W PG(AV) Mean gate power - 3 W Anode positive with respect to cathode ORDERING INSTRUCTIONS Examples: Part number is made up as follows: MP03 HBT 130 - 18 MP 03 HBT 130 18 = Pressure contact module = Outline type = Circuit configuration code (see "circuit options" - front page) = Nominal average current rating at Tcase = 75oC = VRRM/100 MP03 HBP130-16 MP03 HBN130-20 MP03 HBT130-16 Note: Diode ratings and characteristics are comparable with SCR in types HBP or HBN. Types HBP or HBN can also be supplied with diode polarity reversed, to special order. MOUNTING RECOMMENDATIONS Adequate heatsinking is required to maintain the base temperature at 75oC if full rated current is to be achieved. Power dissipation may be calculated by use of VT(TO) and rT information in accordance with standard formulae. We can provide assistance with calculations or choice of heatsink if required. The heatsink surface must be smooth and flat; a surface finish of N6 (32µin) and a flatness within 0.05mm (0.002") are recommended. Immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, Scotch Brite or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. Care should be taken to ensure no foreign particles remain. An even coating of thermal compound (eg. Unial) should be applied to both the heatsink and module mounting surfaces. This should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance. After application of thermal compound, place the module squarely over the mounting holes, (or 'T' slots) in the heatsink. Using a torque wrench, slowly tighten the recommended fixing bolts at each end, rotating each in turn no more than 1/4 of a revolution at a time. Continue until the required torque of 5Nm (44lb.ins) is reached at both ends. It is not acceptable to fully tighten one fixing bolt before starting to tighten the others. Such action may DAMAGE the module. 3/10 MP03 XXX 130 Series CURVES Instantaneous on-state current IT - (A) 1000 800 600 Tj = 125˚C 400 200 0 0 1.0 2.0 3.0 Instantaneous on-state voltage VT - (V) 4.0 Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1 50 P G Gate voltage VG - (V) M = 10 W Tj = 25˚C Tj = -40˚C Tj = 125˚C 1 0.1 0.01 0.1 1 Gate current IG - (A) Fig. 2 Gate trigger characteristics 4/10 16 10 MP03 XXX 130 Series 0.3 Rth(j-c) 0.2 0.1 0 0.001 0.010 0.100 1.0 10 100 Time - (s) Fig. 3 Transient thermal impedance (DC) - (Thyristor or diode) 10 9 8 7 6 60 5 50 4 40 I2t 3 30 2 20 1 10 0 10 1 ms 1 2 3 45 I2t value - A2s x 103 Peak half sine wave on-state current - (kA) Thermal Impedance - (˚C/W) Rth(j-hs) 0 50 cycles at 50Hz Duration Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% VRRM, Tcase = 125˚C (Thyristor or diode) 5/10 MP03 XXX 130 Series On-state power loss per device - (W) 400 350 300 250 180˚ 120˚ 200 90˚ 60˚ 150 30˚ 100 50 0 0 25 50 75 100 Mean on-state current - (A) 125 150 Fig. 5 On-state power loss per arm vs forward current at various conduction angles, sine wave, 50/60Hz On-state power loss per device - (W) 400 350 300 180˚ 250 120˚ 90˚ 200 d.c. 60˚ 150 30˚ 100 50 0 0 25 50 75 100 Mean on-state current - (A) 125 150 Fig. 6 On-state power loss per arm vs forward current at various conduction angles, square wave, 50/60Hz 6/10 Maximum permissible case temperature - (˚C) MP03 XXX 130 Series 140 120 100 80 60 40 20 90˚ 30˚ 0 0 25 60˚ 120˚ 50 75 100 Mean on-state current - (A) 125 180˚ 150 Maximum permissible case temperature - (˚C) Fig. 7 Maximum permissible case temperature vs forward current per arm at various conduction angles, sine wave, 50/60Hz 140 120 100 80 60 40 20 30˚ 0 0 25 60˚ 50 75 100 Mean on-state current - (A) 90˚ 120˚ 125 180˚ d.c. 150 Fig. 8 Maximum permissible case temperature vs forward current per arm at various conduction angles, square wave, 50/60Hz 7/10 MP03 XXX 130 Series 600 Total power - (W) 500 0.12 0.10 0.08 0.04 0.02 0.15 R - Load Rth(hs-a) ˚C/W L - Load 400 0.20 300 200 0.30 0.40 100 0 20 0 40 60 80 100 0 Maximum ambient temperature - (˚C) 50 100 150 D.C. output current - (A) 200 Fig. 9 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance. (Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal). 600 Total power - (W) 500 400 300 200 0.10 0.15 0.12 0.08 0.04 0.02 Rth(hs-a) ˚C/W R & L- Load 0.20 0.30 0.40 100 0 20 0 40 60 80 100 0 Maximum ambient temperature - (˚C) 50 100 150 D.C. output current - (A) 200 Fig. 9 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance. (Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal). 8/10 MP03 XXX 130 Series PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 42.5 35 28.5 Ø5.5 5 6.5 5 18 50 38 5 K2 G2 G1 K1 80 2.8x0.8 2 3x M8 3 32 52 1 92 Recommended fixings for mounting: Recommended mounting torque: Recommended torque for electrical connections: Maximum torque for electrical connections: Nominal weight: 950g M5 socket head cap screws. 5Nm (44lb.ins) 8Nm (70lb.ins) 9Nm (80lb.ins) Module outline type code: MP03 CIRCUIT CONFIGURATIONS G1K1 K2 G2 2 1 3 HBT G1K1 1 2 3 HBP K2 G2 1 2 3 HBN 9/10 MP03 XXX 130 Series ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 Thyristor and diode measurement with a multi-meter AN4853 Use of VTO, rT on-state characteristic AN5001 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4480-4 Issue No. 4.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10