NJL5190K/92K GENERAL PURPOSE PHOTO REFLECTOR ■ GENERAL DESCRIPTION The NJL5190K/5192K are the single-in-line super miniature and super thin general purpose photo reflectors, which consist of high output infrared emitting and high sensitive Si photo transistor, and attain high cost performance. ■ FEATURES • Super miniature, super thin type • Built-in visible light cut-off filter. • High output, high S/N ratio. ■ APPLICATIONS • End detector of video, audio tape. • Rotation detection and control of various motors, audio turntables. • Paper edge detection and mechanism timing detection of facsimile printer, X-Y recorder. • Reading film information and mechanism timing detection of camera. • Reading out the characters of bar code reader, encoder and the automatic vending machine. • Various detection of industrial system, such as FDD, Robot. ■ ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL Emitter Forward Current (Continuous) IF Reverse Voltage (Continuous) VR Power Dissipation PD Detector Collector-Emitter Voltage VCEO Emitter-Collector Voltage VECO Collector Current IC Collector Power Dissipation PC Coupled Total Power Dissipation Operating Temperature Storage Temperature Soldering Temperature Ptot Topr Tstg Tsol RATINGS UNIT 30 6 45 mA V mW 16 6 10 25 V V mA mW 60 -20 ~ +85 -30 ~ +85 260(10sec. 1.5mm from body) mW °C °C °C ■ ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER Emitter Forward Voltage Reverse Current Capacitance Detector Dark Current Collector-Emitter Voltage Coupled Output Current Operating Dark Current Rise Time Fall Time SYMBOL TEST CONDITION MIN TYP TYP UNIT V µA pF VF IR Ct IF=4mA VR=6V VR=0V,f=1MHz — — — — — 25 1.4 10 ICEO VCEO VCE=10V IC=100µA — 16 — — 0.2 IO ICEOD tr tf IF=4mA,VCE=2V,d=0.7mm IF=4mA,VCE=2V IO=100µA,VCE=2V,RL=1KΩ,d=0.7mm IO=100µA,VCE=2V,RL=1KΩ,d=0.7mm 50 — — 30 30 150 0.2 — — — — — — — µA V µA µA µS µS -1- NJL5190K/92K ■ OUTLINE (typ.) Unit : mm C C 0. 4.4 0. 1.65 4.4 7 7 0.8 ① cathode ② anode 2.6 2.6 ① cathode ② anode 0.5 0.85 collector ③ emitter ③ emitter 0.2 3.4 1.78 1.78 ② 0.5 3.8 min. ① 0.8 1.65 0.4 0.8 0.85 5 m in. 0.7 collector ③ 0.4 0.2 1.78 1.78 ① NJL5190K ② ③ NJL5190K-F C C 0. 4.4 0. 1.65 4.4 7 7 0.8 ① emitter ② collector 2.6 2.6 ① emitter ② collector 0.5 0.8 ③ ③ anode 0.2 3.4 ① ② 0.5 3.8 min. 1.78 1.78 ③ 0.4 1.78 1.78 ① NJL5192K -2- ② NJL5192K-F ③ 0.8 1.65 0.4 0.85 cathode anode 0.85 5 m in. 0.7 cathode 0.2 NJL5190K/92K ■ MEASURING SPECIFICATION FOR OUTPUT CURRENT The output current can be measured when reflected at the aluminum 0.7mm 0.7mm Aluminum Evaporation Surface Aluminum Evaporation Surface IF IO IF IO V CE V CE NJL5190K NJL5192K ■ MEASURING CIRCUIT FOR OPERATING DARK CURRENT Light Sealed Dark Box Light Sealed Dark Box I CEOD IF I CEOD IF VCE VCE NJL5190K NJL5192K ■ MEASURING SPECIFICATION FOR EDGE RESPONSE Aluminum Evaporation Surface Edge l d=0.7mm Lead -3- NJL5190K/92K ■ MEASURING CIRCUIT FOR RESPONSE TIME 0.7mm Aluminum Evaporation Surface tw V+ IO IF RD Input 90% RL P.G. OSC 10% Output tr NJL5190K 0.7mm Aluminum Evaporation Surface RD V+ IO IF RL P.G. OSC NJL5192K ■ MAXIMUM RATING CURVES Power Dissipation vs. Temperature Forward Current vs. Temperature 50 50 Total Power Dissipation Collector Power Dissipation 0 40 30 20 10 0 0 20 40 60 80 100 Ambient Temperature Ta(℃) -4- Forward Current IF(mA) Power Dissipation P(mW) 100 0 20 40 60 80 100 Ambient Temperature Ta(℃) tf NJL5190K/92K ■ TYPICAL CHARACTERISTICS Forward Current vs. Forward Voltage Forward Voltage vs. Temperature 1.6 Forward Voltage VF (V) Forward Current IF (mA) 100 10 1 IF=30mA 1.2 IF=4mA 1 0.8 -40 -20 1 0 1.4 2 20 40 60 80 100 Ambient Temperature Ta (ºC) Forward Voltage VF (V) Dark Current vs. Temperature Operating Dark Current vs. Temperature 1000 10000 Operating Currnt Iceod (A) 1000 100 10 1 0.1 100 10 1 0.01 IF=4mA,Vce=2V Vce=10V 0.001 -40 -20 0 20 40 60 80 0.1 -40 100 -20 Ambient Temperature Ta (ºC) 250 200 150 100 Vce=2V,d=0.7mm 50 0 2 4 6 8 Forward Current IF (mA) 20 40 60 80 100 Output Current vs. Temperature Relative Output Current Io/Io(25ºC) (%) 300 0 0 Ambient Temperature Ta (ºC) Output Current vs. Forward Current (Ta=25°C) Output Current Io (µA) Dark Current Iceo (nA) 0 10 120 100 80 60 IF=4mA,VCE=2V 40 20 0 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta (ºC) -5- NJL5190K/92K Output Characteristics (Ta=25°C) Vce Saturation (Ta=25°C) Collector-Emitter Voltage Vce (V) 400 IF=10mA Output Current Io (µA) 350 300 IF=8mA 250 IF=6mA 200 150 IF=4mA 100 IF=2mA 50 0 0 1 2 3 4 0.3 Io=200µA Io=150µA 0.2 Io=100µA Io=70µA Io=50µA Io=30µA 0.1 Io=10µA 0 5 0.1 Collector-Emitter Voltage Vce (V) 10 Forward Current IF (mA) Output Current vs. Distance (Ta=25°C) Output Current vs. Edge Distance (Ta=25°C) 120% 120% Vce=2V,IF=4mA Vce=2V,IF=4mA,d=0.7mm 100% Relative Output Current Io/Io(max.) Relative Output Current Io/Io(max.) 1 80% 60% 40% 20% 100% 80% 60% 40% 20% 0% 0 1 2 3 4 0% 5 -1 -0.8 -0.6 -0.4 -0.2 Reflector Distance d (mm) Spectral Response (Ta=25°C) 0.2 0.4 0.6 0.8 1 Switching Time vs. Load Resistance (Ta=25°C) 1000 120 100 Switching Time t (µS) Relative Response (%) 0 Edge Distance l (mm) 80 60 Vce=2V 40 tr tf 100 td 10 20 Vce=2V,Io=100µA 0 500 600 700 1 800 900 1000 Wavelength λ (nm) -6- 0.1 1 Load Resistance RL (K Ω ) 10 NJL5190K/92K PRECAUTION FOR HANDLING 1. Soldering 1) Avoid the reflow method and solder to touch the body of the device during wave soldering. This is to prevent changes in optical characteristics of the device. 2) Recommended in Soldering Temperature Time Lead Soldering Position 260°C maximum less than 10 seconds At least 1.5mm from body 3) Soldering is recommended to be done in as short period of the time as possible by controlling the temperature of the soldering iron or by the iron of less than 15 watts. 4) The resin gets softened right after soldered, so, the following care has to be taken. - Not to contact the lens surface to anything - Not to dip the device into water or any solvents 5) It is recommended not to solder when the leads or between the lead get pulled, depressed or twisted. 6) In the case of using rosin flux, be careful to avoid contact with the lens surface. If the lens is covered with the flux, the specified characteristics cannot be achieved. 2. Post Solder Cleaning 1) Organic solvents for flux removal like trichloroethlene, acetone, thinner etc, might attach the lens surface. It is preferable to use less reactive solvents, Methyl Alcohol, Isopropyle Alcohol. 2) Cleaning Operation Cleaning Solvent Temperature : 35°C maximum Dipping Time : 3 minute maximum 3. Attention in handling 1) Treat not to touch the lens surface. 2) Avoid dust and any other foreign materials(flux, paints, bonding material, etc.) on the lens surface. 3) Never to apply reverse voltage(VEC) of more than 6V on the photo transistor when measuring the characteristics or adjusting the system. If applied, it causes to lower the sensitivity. 4) When mounting, special care has to be taken on the mounting position and tilting of the device because it is very important to place the device to the optimum position to the object. 4. Storage The leads are silver plated and they are discolored if the device is left open to the air for long after taken out of the envelop. It causes deterioration of soldering characteristics. Mount the device as short as possible after opening the envelope. -7- NJL5190K/92K MEMO [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.