MC74HCT374A Octal 3-State Noninverting D Flip-Flop with LSTTL-Compatible Inputs High–Performance Silicon–Gate CMOS The MC74HCT374A may be used as a level converter for interfacing TTL or NMOS outputs to High–Speed CMOS inputs. The HCT374A is identical in pinout to the LS374. Data meeting the setup and hold time is clocked to the outputs with the rising edge of Clock. The Output Enable does not affect the state of the flip–flops, but when Output Enable is high, the outputs are forced to the high–impedance state. Thus, data may be stored even when the outputs are not enabled. The HCT374A is identical in function to the HCT574A, which has the input pins on the opposite side of the package from the output pins. This device is similar in function to the HCT534A, which has inverting outputs. • • • • • • • • Output Drive Capability: 15 LSTTL Loads TTL/NMOS–Compatible Input Levels Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 4.5 to 5.5 V Low Input Current: 1.0 µA In Compliance with the Requirements Defined by JEDEC Standard No. 7A Chip Complexity: 276 FETs or 69 Equivalent Gates Improvements over HCT374 — Improved Propagation Delays — 50% Lower Quiescent Power — Improved Input Noise and Latchup Immunity http://onsemi.com MARKING DIAGRAMS 20 PDIP–20 N SUFFIX CASE 738 20 MC74HCT374AN AWLYYWW 1 20 1 20 1 SOIC WIDE–20 DW SUFFIX CASE 751D HCT374A AWLYYWW 1 1 1 A WL YY WW = Assembly Location = Wafer Lot = Year = Work Week ORDERING INFORMATION Device MC74HCT374ADW Package Shipping PDIP–20 1440 / Box SOIC–WIDE 38 / Rail MC74HCT374ADWR2 SOIC–WIDE March, 2000 – Rev. 8 1 HCT 374A ALYW TSSOP–20 DT SUFFIX CASE 948G 20 MC74HCT374AN Semiconductor Components Industries, LLC, 2000 20 1000 / Reel MC74HCT374ADT TSSOP–20 75 / Rail MC74HCT374ADTR2 TSSOP–20 2500 / Reel Publication Order Number: MC74HCT374A/D MC74HCT374A PIN ASSIGNMENT OUTPUT ENABLE Q0 LOGIC DIAGRAM D0 D1 D2 DATA INPUTS D3 D4 D5 D6 D7 CLOCK 3 2 4 5 7 6 8 9 13 12 14 15 17 16 18 19 Q0 Q1 Q2 Q3 Q4 NONINVERTING OUTPUTS Q5 1 20 VCC 2 19 Q7 D0 3 18 D7 D1 4 17 D6 Q1 5 16 Q6 Q2 6 15 Q5 D2 7 14 D5 D3 8 13 D4 Q3 9 12 Q4 10 11 CLOCK GND Q6 Q7 FUNCTION TABLE 11 Inputs OUTPUT ENABLE 1 Output Enable PIN 20 = VCC PIN 10 = GND L L L H ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ Value Units Internal Gate Count* Design Criteria 69 ea. Internal Gate Propagation Delay 1.5 ns Internal Gate Power Dissipation 5.0 µW .0075 pJ Speed Power Product *Equivalent to a two–input NAND gate. http://onsemi.com 2 Output Clock D Q L,H, X H L X X H L No Change Z X = don’t care Z = high impedance MC74HCT374A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS* Symbol VCC Parameter DC Supply Voltage (Referenced to GND) Value Unit – 0.5 to + 7.0 V Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V DC Input Current, per Pin ± 20 mA Iout DC Output Current, per Pin ± 35 mA ICC DC Supply Current, VCC and GND Pins ± 75 mA PD Power Dissipation in Still Air, 750 500 450 mW Tstg Storage Temperature – 65 to + 150 _C Iin TL Plastic DIP† SOIC Package† TSSOP Package† This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. v v _C Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP, SOIC, SSOP or TSSOP Package) 260 *Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. †Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D). ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ v ÎÎÎÎ v ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout Parameter Min Max Unit 4.5 5.5 V 0 VCC V – 55 + 125 _C 0 500 ns DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time (Figure 1) DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Test Conditions VCC V – 55 to 25_C 85_C 125_C Unit VIH Minimum High–Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| 20 µA 4.5 5.5 2.0 2.0 2.0 2.0 2.0 2.0 V VIL Maximum Low–Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| 20 µA 4.5 5.5 0.8 0.8 0.8 0.8 0.8 0.8 V Minimum High–Level Output Voltage Vin = VIH or VIL |Iout| 20 µA 4.5 5.5 4.4 5.4 4.4 5.4 4.4 5.4 V Vin = VIH or VIL |Iout| 6.0 mA 4.5 3.98 3.84 3.7 Vin = VIH or VIL |Iout| 20 µA 4.5 5.5 0.1 0.1 0.1 0.1 0.1 0.1 Vin = VIH or VIL |Iout| 6.0 mA 4.5 0.26 0.33 0.4 Maximum Input Leakage Current Vin = VCC or GND 5.5 ± 0.1 ± 1.0 ± 1.0 µA IOZ Maximum Three–State Leakage Current Output in High–Impedance State Vin = VIL or VIH Vout = VCC or GND 5.5 ± 0.5 ± 5.0 ± 10 µA ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0 µA 5.5 4.0 40 160 µA VOH VOL Iin Maximum Low–Level Output Voltage http://onsemi.com 3 V MC74HCT374A ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ∆ICC Additional Quiescent Supply Current Vin = 2.4 V, Any One Input Vin = VCC or GND, Other In Inputs uts lout = 0 µA ≥ –55_C 25_C to 125_C 2.9 2.4 5.5 mA NOTE: 1. Total Supply Current = ICC + Σ∆ICC. NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D). ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ v v ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns) Guaranteed Limit Symbol – 55 to 25_C Parameter 85_C 125_C Unit fmax Maximum Clock Frequency (50% Duty Cycle) (Figures 1 and 4) 30 24 20 MHz tPLH, tPHL Maximum Propagation Delay, Clock to Q (Figures 1 and 4) 31 39 47 ns tPLZ, tPHZ Maximum Propagation Delay, Output Enable to Q (Figures 2 and 5) 30 38 45 ns tPZL, tPZH Maximum Propagation Delay, Output Enable to Q (Figures 2 and 5) 30 38 45 ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 1 and 4) 12 15 18 ns Maximum Input Capacitance 10 10 10 pF Maximum Three–State Output Capacitance (Output in High–Impedance State) 15 15 15 pF Cin Cout NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D). Typical @ 25°C, VCC = 5.0 V CPD Power Dissipation Capacitance (Per Flip–Flop)* pF 65 * Used to determine the no–load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D). ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ v v ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ TIMING REQUIREMENTS (VCC = 5.0 V ± 10%, Input tr = tf = 6.0 ns) Guaranteed Limit Symbol – 55 to 25_C Parameter 85_C 125_C Unit tsu Minimum Setup Time, Data to Clock (Figure 3) 12 15 18 ns th Minimum Hold Time, Clock to Data (Figure 3) 5.0 5.0 5.0 ns tw Minimum Pulse Width, Clock (Figure 1) 12 15 18 ns Maximum Input Rise and Fall Times (Figure 1) 500 500 500 ns tr, tf http://onsemi.com 4 MC74HCT374A SWITCHING WAVEFORMS tr CLOCK tf 3V OUTPUT ENABLE VCC 2.7 V 1.3 V 0.3 V tw GND GND Q 1/fmax tPLH Q 1.3 V tPZL tPLZ tPZH tPHZ tPHL 90% 1.3 V 10% Q tTLH HIGH IMPEDANCE 1.3 V 10% VOL 90% VOH 1.3 V HIGH IMPEDANCE tTHL Figure 1. Figure 2. VALID 3V DATA 1.3 V GND tsu th 3V CLOCK 1.3 V GND Figure 3. TEST CIRCUITS TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST DEVICE UNDER TEST CL* CONNECT TO VCC WHEN TESTING tPLZ AND tPZL CONNECT TO GND WHEN TESTING tPHZ AND tPZH 1 kΩ OUTPUT CL* *Includes all probe and jig capacitance *Includes all probe and jig capacitance Figure 4. Figure 5. EXPANDED LOGIC DIAGRAM D0 3 D1 4 D D Q C CLOCK D2 7 Q D3 8 D C Q D4 13 D C Q D5 14 D C Q D6 17 D C Q D7 18 D C Q D C Q C 11 OUTPUT 1 ENABLE 2 Q0 5 Q1 6 Q2 9 Q3 http://onsemi.com 5 12 Q4 15 Q5 16 Q6 19 Q7 MC74HCT374A PACKAGE DIMENSIONS PDIP–20 N SUFFIX PLASTIC DIP PACKAGE CASE 738–03 ISSUE E –A– 20 11 1 10 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. B L C –T– K SEATING PLANE M N E G F J D 20 PL 0.25 (0.010) 20 PL 0.25 (0.010) M T A M T B M M DIM A B C D E F G J K L M N INCHES MIN MAX 1.010 1.070 0.240 0.260 0.150 0.180 0.015 0.022 0.050 BSC 0.050 0.070 0.100 BSC 0.008 0.015 0.110 0.140 0.300 BSC 0_ 15 _ 0.020 0.040 MILLIMETERS MIN MAX 25.66 27.17 6.10 6.60 3.81 4.57 0.39 0.55 1.27 BSC 1.27 1.77 2.54 BSC 0.21 0.38 2.80 3.55 7.62 BSC 0_ 15_ 0.51 1.01 SO–20 DW SUFFIX CASE 751D–05 ISSUE F q A 20 X 45 _ M E h 0.25 1 10 20X B B 0.25 M T A S B S A L H 10X NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT MAXIMUM MATERIAL CONDITION. 11 B M D 18X e A1 SEATING PLANE DIM A A1 B C D E e H h L q C T http://onsemi.com 6 MILLIMETERS MIN MAX 2.35 2.65 0.10 0.25 0.35 0.49 0.23 0.32 12.65 12.95 7.40 7.60 1.27 BSC 10.05 10.55 0.25 0.75 0.50 0.90 0_ 7_ MC74HCT374A PACKAGE DIMENSIONS 20X 0.15 (0.006) T U TSSOP–20 DT SUFFIX CASE 948E–02 ISSUE A K REF 0.10 (0.004) S M T U S V S K K1 2X L/2 20 ÍÍÍÍ ÍÍÍÍ ÍÍÍÍ 11 J J1 B –U– L PIN 1 IDENT SECTION N–N 1 10 0.25 (0.010) N 0.15 (0.006) T U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–. M A –V– N F DETAIL E –W– C D G H DETAIL E 0.100 (0.004) –T– SEATING PLANE http://onsemi.com 7 DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 6.40 6.60 4.30 4.50 ––– 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.27 0.37 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.252 0.260 0.169 0.177 ––– 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.011 0.015 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ MC74HCT374A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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