HP AT41586 Low cost general purpose transistor Datasheet

Low Cost General Purpose
Transistors
Technical Data
AT-41586
Description
• Low Noise Figure
1.4 dB Typical at 1 GHz
1.7 dB Typical at 2 GHz
• High Associated Gain
17.0 dB Typical at 1 GHz
12.5 dB Typical at 2 GHz
• Low Cost Surface Mount
Package
• Tape and Reel Option
Available
Hewlett-Packard’s AT-41586 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41586 is housed in a low cost
surface mount .085" diameter
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50 Ω in the 1 to 2 GHz
frequency range, makes this
device easy to use as a low noise
amplifier.
24
21
G A (dB)
18
GA
15
12
4
6
NFO
3
0
0.5
2
NFO (dB)
9
0
1.0
2.0
3.0
4.0
FREQUENCY (GHz)
Figure 1. AT-41586 Noise Figure and
Associated Gain vs. Frequency at
VCE = 8 V, IC = 10 mA.
The AT-41586 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
86 Plastic Package
Pin Connections
EMITTER
4
415
Features
BASE
1
COLLECTOR
3
2
EMITTER
Excellent device uniformity,
performance and reliability are
produced by the use of ionimplantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
2
AT-41586 Absolute Maximum Ratings[1]
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation[2]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
1.5
20
12
60
500
150
-65 to 150
Thermal Resistance:[3]
θjc =165°C/W
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. TCASE = 25°C.
3. See MEASUREMENTS section, “Thermal Resistance,” for more information.
Electrical Specifications, TA = 25°C, VCE = 8 V
Symbol
NFo
GA
Parameters and Test Conditions
Optimum Noise Figure: IC = 10 mA
Gain @ NF0: IC = 10 mA
|S21E|2
Insertion Power Gain: IC = 25 mA
P1dB
G1dB
fT
hFE
ICBO
IEBO
Power Output @ 1 dB Gain Compression: IC = 25 mA
1 dB Compressed Gain: IC = 25 mA
Gain Bandwidth Product: IC = 25 mA
Forward Current Transfer Ratio: IC = 10 mA
Collector Cutoff Current: VCB = 8 V
Emitter Cutoff Current: VEB = 1 V
Unit
dB
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 2.0 GHz
f = 2.0 GHz
Min.
Typ.
1.4
1.7
3.0
17.0
12.5
8.0
17.0
11.0
18.0
13.0
8.0
150
dB
dB
dBm
dB
GHz
30
Max.
270
0.2
1.0
µA
µA
Note:
1. For more information on outlines 86, refer to “Tape and Reel Packaging for Surface Mount Devices.”
20
16
20
14
1.0 GHz
P1dB
16
GA
GAIN (dB)
10
4
2
0
10
20
G1dB
12
10
8
2.0 GHz
10
4.0 GHz
6
NFO (dB)
NFO
0
15
14
12
|S 21E | 2 (dB)
G A (dB)
18
30
I C (mA)
Figure 2. AT-41586 Optimum Noise
Figure and Associated Gain vs. Collector Current at VCE = 8 V, f = 2.0 GHz.
5
4
2
0
0
10
20
30
40
COLLECTOR CURRENT
Figure 3. AT-41586 P1dB and G1dB vs.
Collector Current at VCE = 8 V,
f = 2.0 GHz.
0
5
10
25
30
40
I C (mA)
Figure 4. AT-41586 Insertion Power
Gain vs. Collector Current and
Frequency at 25°C, VCE = 8 V.
3
AT-41586 Typical Scattering Parameters at TA = 25°C
VCE = 8 V, IC = 10 mA, Zo = 50 Ω
S11
S21
S12
S22
Frequency
(GHz)
Mag.
Ang.
(dB)
Mag.
Ang.
(dB)
Mag.
Ang.
Mag.
Ang.
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
0.78
0.71
0.65
0.61
0.59
0.57
0.56
0.56
0.55
0.55
0.55
0.57
0.59
0.62
0.64
0.67
0.70
0.73
0.76
0.78
-39
-71
-95
-113
-127
-137
-146
-154
-160
-166
173
157
144
133
123
114
106
99
93
88
28.4
26.9
25.2
23.5
22.0
20.7
19.6
18.5
17.6
16.8
13.4
10.9
9.2
7.6
6.0
5.1
4.1
2.9
1.6
0.8
26.3
22.1
18.1
15.0
12.6
10.8
9.5
8.4
7.6
6.9
4.7
3.5
2.9
2.4
2.0
1.8
1.6
1.4
1.2
1.1
154
134
122
119
114
100
95
91
86
83
70
57
44
34
25
16
5
-3
-8
-18
-36.4
-31.7
-29.8
-28.8
-28.1
-27.5
-27.1
-26.5
-26.1
-25.8
-23.8
-22.0
-20.6
-19.3
-18.1
-17.0
-15.9
-15.0
-14.2
-13.5
0.015
0.026
0.032
0.036
0.039
0.042
0.044
0.047
0.049
0.051
0.064
0.079
0.093
0.108
0.124
0.141
0.159
0.176
0.193
0.209
71
59
50
44
43
43
43
43
44
47
49
49
48
47
45
42
39
35
31
31
0.91
0.79
0.67
0.58
0.52
0.47
0.44
0.42
0.40
0.38
0.34
0.32
0.31
0.30
0.30
0.31
0.32
0.32
0.34
0.36
-16
-27
-34
-38
-40
-40
-41
-41
-42
-42
-45
-52
-61
-71
-83
-95
-108
-121
-135
-150
AT-41586 Typical Noise Parameters at TC = 25°C,
Γopt
Mag.
0.12
0.10
0.04
0.12
35
Ang.
3
16
43
-145
RN/50 Ω
0.17
0.17
0.16
0.16
30
25
GAIN (dB)
ZO = 50 Ω, IC = 10 mA, VCE = 8 V
Frequency
NFO
(GHz)
(dB)
0.1
1.3
0.5
1.3
1.0
1.4
2.0
1.7
MSG
|S 21E |
2
20
MAG
15
10
5
0
0.1
1.0
6.0
FREQUENCY (GHz)
Figure 5. AT-41586 Insertion Power
Gain, Maximum Available Gain and
Maximum Stable Gain vs. Frequency
at VCE = 8 V, IC = 10 mA.
4
AT-41586 Typical Scattering Parameters at TA = 25°C
VCE = 8 V, IC = 25 mA, Zo = 50 Ω
S11
S21
S12
S22
Frequency
(GHz)
Mag.
Ang.
(dB)
Mag.
Ang.
(dB)
Mag.
Ang.
Mag.
Ang.
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
0.64
0.59
0.56
0.55
0.54
0.54
0.54
0.54
0.54
0.55
0.57
0.57
0.60
0.62
0.64
0.67
0.70
0.73
0.77
0.76
-61
-101
-125
-140
-151
-159
-166
-171
-176
177
164
152
141
132
124
116
109
102
96
90
31.9
29.2
26.6
24.6
22.9
21.4
20.1
19.0
18.0
17.1
13.6
11.1
9.2
7.6
6.4
5.6
4.1
3.5
2.3
1.6
39.4
28.7
21.4
17.0
14.0
11.7
10.1
8.9
7.9
7.2
4.8
3.6
2.9
2.4
2.1
1.9
1.6
1.5
1.3
1.2
154
169
124
111
104
97
91
86
81
77
64
55
44
34
24
18
9
1
-7
-14
-37.0
-33.1
-31.7
-30.4
-29.6
-28.8
-28.1
-27.5
-26.9
-26.3
-23.8
-21.9
-20.0
-18.4
-17.0
-14.8
-15.9
-15.3
-14.4
-13.9
0.014
0.022
0.026
0.030
0.033
0.036
0.039
0.042
0.045
0.048
0.064
0.080
0.100
0.120
0.140
0.180
0.160
0.170
0.190
0.200
64
53
49
49
50
52
53
55
56
57
59
57
55
52
49
45
45
42
38
33
0.82
0.64
0.53
0.47
0.43
0.40
0.40
0.38
0.37
0.36
0.34
0.32
0.31
0.31
0.31
0.32
0.30
0.30
0.32
0.35
-24
-35
-38
-39
-38
-38
-37
-37
-37
-37
-42
-49
-58
-68
-80
-94
-109
-123
-138
-152
Outline 86 Dimensions
AT-41586 Ordering Information
0.51 ± 0.13
(0.020 ± 0.005)
4
Part Number
Increment
Comments
AT-41586-BLK
AT-41586-TR1
100
1000
Bulk
7" Reel
45°
C
L
3
2.34 ± 0.38
(0.092 ± 0.015)
1
2
1.52 ± 0.25
(0.060 ± 0.010)
2.67 ± 0.38
(0.105 ± 0.15)
5° TYP.
0.66 ± 0.013
(0.026 ± 0.005)
0.203 ± 0.051
(0.006 ± 0.002)
8° MAX
0° MIN
2.16 ± 0.13
(0.085 ± 0.005)
0.30 MIN
(0.012 MIN)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
5
Device Orientation
REEL
CARRIER
TAPE
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions and Product Orientation
P0
P2
D0
t
10 PITCHES CUMULATIVE
TOLERANCE ON TAPE ±0.2 MM
COVER
TAPE
E
A
K C
F
W
B
T
P1
DESCRIPTION
SYMBOL
USER FEED
DIRECTION
D1
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P1
D1
6.45 ± 0.10
5.13 ± 0.10
2.11 ± 0.10
8.00 ± 0.10
1.50 min.
0.254 ± 0.004
0.202 ± 0.004
0.083 ± 0.004
0.315 ± 0.004
0.059 min.
PERFORATION
DIAMETER
PITCH
POSITION
D0
P0
E
1.50 + 0.10/-0
4.00 ± 0.10
1.75 ± 0.10
0.059 + 0.004/-0
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t
8.00 ± 0.30
0.255 ± 0.013
0.315 ± 0.012
0.0100 ± 0.0005
COVER TAPE
WIDTH
TAPE THICKNESS
C
Tt
9.19 ± 0.10
0.051 ± 0.010
0.362 ± 0.004
0.0020 ± 0.0004
DISTANCE
BETWEEN
CENTERLINE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
5.51 ± 0.05
0.217 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
For technical assistance or the location of
your nearest Hewlett-Packard sales office,
distributor or representative call:
Americas/Canada: 1-800-235-0312 or
408-654-8675
Far East/Australasia: Call your local HP
sales office.
Japan: (81 3) 3335-8152
Europe: Call your local HP sales office.
Data subject to change.
Copyright © 1997 Hewlett-Packard Co.
Obsoletes 5963-7303E
Printed in U.S.A.
5965-8908E (9/97)
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