TO -2 20A C BYV25F-600 Enhanced ultrafast power diode Rev. 02 — 7 March 2011 Product data sheet 1. Product profile 1.1 General description Enhanced ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package. 1.2 Features and benefits High thermal cycling performance Low thermal resistance Low on-state losses Soft recovery characteristic 1.3 Applications Dual Mode (DCM and CCM) PFC Power Factor Correction (PFC) for Interleaved Topology 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VRRM repetitive peak reverse voltage IF(AV) average forward current Conditions Min Typ Max Unit - - 600 V square-wave pulse; δ = 0.5; Tmb ≤ 126 °C; see Figure 1; see Figure 2 - - 5 A IF = 5 A; Tj = 25 °C; see Figure 5 - 1.3 1.9 V IF = 5 A; Tj = 150 °C; see Figure 5 - 1.1 1.7 V IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; see Figure 6 - 17.5 35 Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time ns BYV25F-600 NXP Semiconductors Enhanced ultrafast power diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 K cathode 2 A anode mb K mounting base; cathode Graphic symbol K mb A 001aaa020 1 2 SOD59 (TO-220AC) 3. Ordering information Table 3. Ordering information Type number Package BYV25F-600 Name Description Version TO-220AC plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC SOD59 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage DC - 600 V IF(AV) average forward current square-wave pulse; δ = 0.5 ; Tmb ≤ 126 °C; see Figure 1; see Figure 2 - 5 A IFRM repetitive peak forward current square-wave pulse; δ = 0.5 ; tp = 25 µs; Tmb ≤ 126 °C - 10 A IFSM non-repetitive peak forward current tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; see Figure 3 - 60 A tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C; see Figure 3 - 66 A Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C BYV25F-600 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 March 2011 © NXP B.V. 2011. All rights reserved. 2 of 11 BYV25F-600 NXP Semiconductors Enhanced ultrafast power diode 003aaf430 14 Ptot (W) 12 δ =1 003aaf431 10 Ptot (W) a = 1.57 1.9 8 0.5 10 2.2 2.8 6 8 0.2 4.0 0.1 6 4 4 2 2 0 0 0 2 4 6 8 0 1 2 3 4 5 IF(AV) (A) IF(AV) (A) Vo = 1.499 V; Rs = 0.041 Ω Vo = 1.499 V; Rs = 0.041 Ω Fig 1. Forward power dissipation as a function of average forward current; square waveform; maximum values Fig 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values 003aaf446 103 IFSM (A) 102 P tp 101 10-5 10-4 10-3 t 10-2 tp (s) Fig 3. Non-repetitive peak forward current as a function of pulse width; square waveform; maximum values BYV25F-600 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 March 2011 © NXP B.V. 2011. All rights reserved. 3 of 11 BYV25F-600 NXP Semiconductors Enhanced ultrafast power diode 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - - 2.5 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W 001aag913 10 Zth(j-mb) (K/W) 1 10−1 δ= P tp T 10−2 t tp 10−3 10−6 Fig 4. T 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse width BYV25F-600 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 March 2011 © NXP B.V. 2011. All rights reserved. 4 of 11 BYV25F-600 NXP Semiconductors Enhanced ultrafast power diode 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics VF forward voltage IF = 5 A; Tj = 25 °C; see Figure 5 - 1.3 1.9 V IF = 5 A; Tj = 150 °C; see Figure 5 - 1.1 1.7 V IR reverse current VR = 600 V; Tj = 100 °C - - 1.5 mA VR = 600 V; Tj = 25 °C - - 50 µA Dynamic characteristics Qr recovered charge IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; see Figure 6 - 13 - nC trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; see Figure 6 - 17.5 35 ns IRM peak reverse recovery current IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; see Figure 6 - 1.5 - A VFRM forward recovery voltage IF = 1 A; dIF/dt = 100 A/µs; Tj = 25 °C; see Figure 7 - 3.2 - V 003aaf445 20 dlF IF IF (A) 16 dt trr 12 time (1) (2) (3) 25 % 8 Qr 100 % 4 IR IRM 003aac562 0 0 1 2 3 VF (A) Vo = 1.499 V; Rs = 0.041 Ω (1) Tj = 150 °C; typical values; (2) Tj = 150 °C; maximum values; (3) Tj = 25 °C; maximum values; Fig 5. Forward current as a function of forward voltage BYV25F-600 Product data sheet Fig 6. Reverse recovery definitions; ramp recovery All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 March 2011 © NXP B.V. 2011. All rights reserved. 5 of 11 BYV25F-600 NXP Semiconductors Enhanced ultrafast power diode IF time VF VFRM VF time 001aab912 Fig 7. Forward recovery definitions BYV25F-600 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 March 2011 © NXP B.V. 2011. All rights reserved. 6 of 11 BYV25F-600 NXP Semiconductors Enhanced ultrafast power diode 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC SOD59 E A A1 P q D1 D H Q b1 L 1 2 c b e 0 5 scale Dimensions Unit mm max nom min 10 mm A A1 b b1(1) c D D1 E 4.7 1.40 0.95 1.7 0.65 15.8 6.8 10.30 4.3 1.15 0.70 1.3 0.45 15.6 6.4 9.65 e H 5.08 (REF) P Q q 16.25 15.0 L 3.7 2.6 2.9 15.70 12.5 3.5 2.2 2.7 Note 1. Protruded dambar are included in the dimension. Outline version SOD59 Fig 8. sod059_po References IEC JEDEC JEITA 2-lead TO-220AC European projection Issue date 09-08-17 09-08-25 Package outline SOD59 (TO-220AC) BYV25F-600 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 March 2011 © NXP B.V. 2011. All rights reserved. 7 of 11 BYV25F-600 NXP Semiconductors Enhanced ultrafast power diode 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BYV25F-600 v.2 20110307 Product data sheet - BYV25F-600 v.1 - - Modifications: BYV25F-600 v.1 BYV25F-600 Product data sheet • Various changes to content. 20101001 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 March 2011 © NXP B.V. 2011. All rights reserved. 8 of 11 BYV25F-600 NXP Semiconductors Enhanced ultrafast power diode 9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 9.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective BYV25F-600 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 March 2011 © NXP B.V. 2011. All rights reserved. 9 of 11 BYV25F-600 NXP Semiconductors Enhanced ultrafast power diode agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BYV25F-600 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 March 2011 © NXP B.V. 2011. All rights reserved. 10 of 11 BYV25F-600 NXP Semiconductors Enhanced ultrafast power diode 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Contact information. . . . . . . . . . . . . . . . . . . . . .10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 7 March 2011 Document identifier: BYV25F-600