Hardware Documentation Data Sheet ® HAL 2xy Hall-Effect Sensor Family Edition Jan. 11, 2010 DSH000141_003EN HAL 2xy DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas Trademarks – HAL Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. 2 Jan. 11, 2010; DSH000141_003EN Micronas HAL 2xy DATA SHEET Contents Page Section Title 4 4 4 5 5 5 1. 1.1. 1.2. 1.3. 1.4. 1.5. Introduction Features Family Overview Marking Code Operating Junction Temperature Range Solderability and Welding 6 2. Functional Description 7 7 9 9 9 9 10 10 12 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Overview 15 15 15 15 15 15 15 15 16 4. 4.1. 4.2. 4.2.1. 4.2.2. 4.3. 4.3.1. 4.3.2. 4.4. Application Notes Ambient Temperature HAL20y, HAL21y Operation Extended Operating Conditions Start-up Behavior HAL22y Operation Extended Operating Conditions Start-up Behavior EMC and ESD 17 5. Data Sheet History Micronas Jan. 11, 2010; DSH000141_003EN 3 HAL 2xy DATA SHEET Hall-Effect Sensor Family – superior temperature stability for automotive or industrial applications Release Note: Revision bars indicate significant changes to the previous edition. – high ESD rating – EMC corresponding to ISO 7637 1. Introduction 1.2. Family Overview The HAL 2xy Hall switch family is produced in CMOS technology. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. In addition the HAL22y sensors features a power-on and undervoltage reset. The active offset compensation leads to magnetic parameters which are robust against mechanical stress effects. In addition, the magnetic characteristics are constant in the full supply voltage and temperature range. The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from −40 °C up to 125 °C. For HAL22y the minimum supply voltage is 4.3 V. The HAL 2xy family is available in the SMD package SOT89B-3 and in the leaded versions TO92UA-5 and TO92UA-6. This sensor family consists of sensors with latching and unipolar output behavior. Type Switching Behavior Sensitivity see Page 201 unipolar low 12 202 latching high 12 203 latching medium 12 204 latching low 12 206 unipolar high 12 207 unipolar low 12 208 unipolar medium 12 210 unipolar high 12 211 unipolar with inverted output (north polarity) high 12 212 unipolar low 12 1.1. Features – switching offset compensation – operates from 3.8 V to 24 V supply voltage (HAL22y minimum supply voltage is 4.3 V) Family members with power-on and undervoltage reset (HAL22y): – power-on and undervoltage reset in case of HAL22y Type Sensitivity – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Switching Behavior see Page 220 latching high 12 221 unipolar low 12 – overvoltage protection at all pins – reverse-voltage protection at VDD-pin – magnetic characteristics are robust against mechanical stress effects – short-circuit protected open-drain output by thermal shut down – constant switching points over a wide supply voltage and temperature range – the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics 4 Jan. 11, 2010; DSH000141_003EN Micronas HAL 2xy DATA SHEET Unipolar Sensors: 1.4. Operating Junction Temperature Range The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). Latching Sensors: Note: Due to power dissipation, there is a difference between the ambient temperature (TA) and junction temperature. Please refer to section 4.1. on page 15 for details. The sensors have a latching behavior and require a magnetic north and south pole for correct functioning. The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. K: TJ = −40 °C to +140 °C Hall Sensor Package Codes HALXXXPA-T Temperature Range: K Package: TQ for SOT89B-3 JQ for TO92UA-5/6 Unipolar Switching Sensors with Inverted Output Sensitive to North Pole: Type: 2xy The output turns high with the magnetic north pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic south pole on the brandedside. Example: HAL202JQ-K → Type: 202 → Package: TO92UA-6 → Temperature Range: TJ = −40 °C to +140 °C 1.3. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type Temperature Range 1.5. Solderability and Welding K During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded. HAL201 201K HAL202 202K HAL203 203K HAL204 204K HAL206 206K HAL207 207K HAL208 208K HAL210 210K HAL211 211K HAL212 212K HAL220 220K HAL221 221K Micronas Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors. Ordering Codes, Packaging, Handling”. Device terminals shall be compatible with laser and electrical welding. Please, note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1 VDD 3 OUT 2 GND Fig. 1–1: Pin configuration Jan. 11, 2010; DSH000141_003EN 5 HAL 2xy DATA SHEET 2. Functional Description The Hall effect sensor is a monolithic integrated circuit that switches in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. 1 VDD Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Short Circuit and Overvoltage Protection Hysteresis Control Hall Plate Comparator 3 Switch Output OUT Clock 2 GND Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switching level to switching of output can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the Output pin and VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to −15 V. No external reverse protection diode is needed at the VDD-pin for reverse voltages ranging from 0 V to −15 V. Fig. 2–1: HAL20y and HAL21y block diagram VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hall Plate Hysteresis Control Power-on & Undervoltage Reset Short Circuit & Overvoltage Protection Comparator Switch OUT Output 3 Clock GND 2 Fig. 2–2: HAL22y block diagram In case of HAL22y a built-in reset-circuit clamps the output to the “high” state (reset state) during power-on or when the supply voltage drops below the reset voltage of Vreset < 4.3 V. For supply voltages between Vreset and 4.3 V, the output state of the device responds to the magnetic field. For supply voltages above 4.3 V, the device works according to the specified characteristics. 6 Jan. 11, 2010; DSH000141_003EN Micronas HAL 2xy DATA SHEET 3. Specifications 3.1. Outline Dimensions Fig. 3–1: SOT89B-3: Plastic Small Outline Transistor package, 4 leads, with one sensitive area Weight approximately 0.034 g. Micronas Jan. 11, 2010; DSH000141_003EN 7 HAL 2xy DATA SHEET Fig. 3–2: TO92UA-6: Plastic Transistor Standard UA package, 3 leads Weight approximately 0.106 g 8 Jan. 11, 2010; DSH000141_003EN Micronas HAL 2xy DATA SHEET 3.2. Dimensions of Sensitive Area 0.25 mm × 0.12 mm (on chip) 3.3. Positions of Sensitive Areas SOT89B-3 TO92UA-5/6 y 0.95 mm nominal 1.08 mm nominal A4 0.33 mm nominal 0.30 mm nominal 3.4. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin Name Min. Max. Unit VDD Supply Voltage 1 −15 281) V VO Output Voltage 3 −0.3 281) V IO Continuous Output On Current 3 − 501) mA TJ Junction Temperature Range −40 1702) °C 1) 2) as long as TJmax is not exceeded t < 1000 h 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Micronas Jan. 11, 2010; DSH000141_003EN 9 HAL 2xy DATA SHEET 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device. All voltages listed are referenced to ground (GND). Symbol Parameter Pin Name Min. Max. Unit Comment VDD Supply Voltage 1 3.8 24 V for HAL20y and HAL21y only VDD Supply Voltage 1 4.3 24 V for HAL22y only IO Continuous Output on Current 3 0 20 mA VO Output Voltage (output switched off) 3 0 24 V 3.6. Characteristics at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V (HAL22y: VDD = 4.3 V to 24 V), GND = 0 V at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 12 V. Symbol Parameter Pin No. Min. Typ. Max. Unit IDD Supply Current over Temperature Range 1 1.6 3 5.2 mA VDDZ Overvoltage Protection at Supply 1 − 28.5 32 V IDD = 25 mA, TJ = 25 °C, t = 20 ms VOZ Overvoltage Protection at Output 3 − 28 32 V IOH = 25 mA, TJ = 25 °C, t = 20 ms VOL Output Voltage over Temperature Range 3 − 130 400 mV IOL = 20 mA IOH Output Leakage Current over Temperature Range 3 − − 10 µA Output switched off, TJ ≤150 °C, VOH = 3.8 to 24 fosc Internal Oscillator Chopper Frequency over Temperature Range − − 62 − kHz HAL20y, HAL21y, HAL22y − 140 − kHz HAL204 − 35 − µs 1) For HAL20y, HAL21y only − 70 − µs 1) For HAL 22y only ten(O) Enable Time of Output after Setting of VDD 1 Conditions Vreset Reset Voltage 1 − 3.8 − V For HAL 22y only tr Output Rise Time 3 − 75 400 ns tf Output Fall Time 3 − 50 400 ns VDD = 12 V, RL = 820 Ohm, CL = 20 pF 10 Jan. 11, 2010; DSH000141_003EN Micronas HAL 2xy DATA SHEET Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions Measured with a 1s0p board 30 mm x 10 mm x 1.5 mm, pad size (see Fig. 3–3) SOT89B Package Thermal Resistance Rthja Junction to Ambient − − − 212 K/W Rthjc Junction to Case − − − 73 K/W TO92UA Package Thermal Resistance Measured with a 1s0p board Rthja Junction to Ambient − − − 225 K/W Rthjc Junction to Case − − − 63 K/W 1) VDD = 12 V, B > BON + 2 mT or B < BOFF − 2 mT and B > BOFF + 2 mT or B < BON - 2 mT for HAL 212 1.80 1.05 1.45 2.90 1.05 0.50 1.50 Fig. 3–3: Recommended footprint SOT89B-3, Dimensions in mm All dimensions are for reference only. The pad size may vary depending on the requirements of the soldering process. Micronas Jan. 11, 2010; DSH000141_003EN 11 HAL 2xy DATA SHEET 3.7. Magnetic Characteristics Overview at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V, (HAL22y: VDD = 4.3 V to 24 V) Typical Characteristics for VDD = 12 V. Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Switching Type Parameter TJ On point BON Off point BOFF Hysteresis BHYS Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit HAL201 −40 °C 28 33 42 18 23 30 − 10.0 − mT unipolar 25 °C 28 34 42 18 24 30 − 10.0 − mT 140 °C 26 32 42 17.5 22 30 − 10.0 − mT HAL202 −40 °C 0.5 2.8 6.5 −6.5 −2.8 −0.5 − 5.6 − mT latching 25 °C 0.5 2.6 6 −6 −2.6 −0.5 − 5.2 − mT 140 °C 0.1 2.4 5.5 −5.5 −2.4 −0.1 − 4.8 − mT HAL203 −40 °C 5.5 8.4 12.5 −12.5 −8.6 −5.5 − 17 − mT latching 25 °C 5 7.6 11.5 −11.5 −7.6 −5 − 15.2 − mT 140 °C 3.5 6.7 11.0 −11.0 −6.4 −3.5 − 13.1 − mT HAL204 −40 °C 10.5 15.8 21.5 −21.5 −15.8 −10.5 − 31.6 − mT latching 25 °C 10 14 18.5 −18.5 −14 −10 − 28 − mT 140 °C 6.0 10 15.5 −15.5 −10 −6.0 − 20 − mT HAL206 −40 °C 8.8 12.5 18.0 4.5 7.0 11.0 − 5.5 − mT unipolar 25 °C 8.1 12.0 16.5 4.2 6.5 10.4 − 5.5 − mT 140 °C 7.4 10.0 16.0 3.4 6.0 9.9 − 4.0 − mT HAL207 −40 °C 19.6 27.5 35.8 16.9 23.0 31.3 − 4.5 − mT unipolar 25 °C 19.6 26.5 35.0 16.9 22.5 30.6 − 4.0 − mT 140 °C 18.4 26.0 33.6 15.8 22.0 29.4 − 4.0 − mT HAL208 −40 °C 13.1 17.5 25.0 11.9 15.7 23.0 − 1.8 − mT unipolar 25 °C 12.7 17.0 23.8 11.4 15.0 21.9 − 2.0 − mT 140 °C 10.8 14.6 23.0 9.7 13.0 21.0 − 1.6 − mT HAL210 −40 °C 2.3 8.1 12.0 1.8 5.9 11.5 − 2.2 − mT unipolar 25 °C 2.3 7.9 12.0 1.8 5.7 11.5 − 2.2 − mT 140 °C 2.3 7.7 12.0 1.8 5.7 11.5 − 2.0 − mT 12 Jan. 11, 2010; DSH000141_003EN Micronas HAL 2xy DATA SHEET Sensor Switching Type Parameter TJ On point BON Off point BOFF Hysteresis BHYS Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit HAL211 −40 °C −11.5 −4.9 −1.8 −12.0 −7.4 −2.3 − 2.5 − mT unipolar 25 °C −11.5 −5.2 −1.8 −12.0 −7.6 −2.3 − 2.4 − mT inverted 140 °C −11.5 −5.5 −1.8 −12.0 −7.7 −2.3 − 2.3 − mT HAL 212 −40 °C 25.8 30.6 35.2 23.8 28.6 33.2 − 2.0 − mT unipolar 25 °C 24.1 28.9 34.5 22.3 27.1 32.7 − 1.8 − mT 140 °C 20.4 25.6 32.0 18.9 24.1 30.5 − 1.5 − mT HAL220 −40 °C 0.5 2.8 6.5 −6.5 −2.8 −0.5 − 5.6 − mT latching 25 °C 0.5 2.6 6 −6 −2.6 −0.5 − 5.2 − mT 140 °C 0.3 2.4 5.5 −5.5 −2.4 −0.3 − 4.8 − mT HAL221 −40 °C 13.0 19.0 23.0 7.5 12.0 17.5 − 7.0 − mT unipolar 25 °C 13.0 18.5 23.0 7.5 12.0 17.5 − 6.5 − mT 140 °C 13.0 17.5 23.0 7.5 11.5 17.5 − 6.0 − mT Micronas Jan. 11, 2010; DSH000141_003EN 13 HAL 2xy DATA SHEET mA 25 mA 5 HAL 2xy HAL 2xy 20 IDD IDD TA = –40 °C 15 4 TA = 25 °C TA = 140 °C 10 3 5 2 0 VDD = 3.8 V VDD = 12 V –5 VDD = 24 V 1 –10 –15 –15–10 –5 0 0 –50 5 10 15 20 25 30 35 V 50 100 150 200 °C TA VDD Fig. 3–4: Typical supply current versus supply voltage mA 5.0 0 Fig. 3–6: Typical supply current versus ambient temperature HAL 2xy 4.5 IDD 4.0 TA = –40 °C 3.5 TA = 25 °C 3.0 TA = 100 °C 2.5 TA = 140 °C 2.0 1.5 1.0 0.5 0 1 2 3 4 5 6 7 8 V VDD Fig. 3–5: Typical supply current versus supply voltage 14 Jan. 11, 2010; DSH000141_003EN Micronas HAL 2xy DATA SHEET 4. Application Notes 4.2.2. Start-up Behavior 4.1. Ambient Temperature Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in Section 3.6.: Characteristics on page 10. Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). T J = T A + ΔT At static conditions and continuous operation, the following equation applies: ΔT = I DD × V DD × R th During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above BON. The output will be high if B is below BOFF. In case of sensors with an inverted switching behavior (HAL211), the output state will be high if B > BOFF and low if B < BON. For magnetic fields between BOFF and BON, the output state of the HAL sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above BONmax, respectively, below BOFFmin. If IOUT > IDD, please contact Micronas application support for detailed instructions on calculating ambient temperature. 4.3. HAL22y Operation For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 10). For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: Supply Voltage Below 4.3 V T Amax = T Jmax – ΔT 4.3.1. Extended Operating Conditions The devices contain a Power-on Reset (POR) and a undervoltage reset. For VDD < Vreset the output state is high. For Vreset < VDD < 4.3 V the device responds to the magnetic field according to the specified magnetic characteristics. Note: The functionality of the sensor below 4.3 V is not tested. For special test conditions, please contact Micronas. 4.2. HAL20y, HAL21y Operation 4.2.1. Extended Operating Conditions All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 10). Supply Voltage Below 3.8 V Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification. 4.3.2. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in Section 3.6.: Characteristics on page 10. During the initialization time, the output state for the HAL22y is ‘Off-state‘ (i.e. Output High). After ten(O), the output will high. The output will be switched to low if the magnetic field B is above BON. Note: The functionality of the sensor below 3.8 V is not tested. For special test conditions, please contact Micronas. Micronas Jan. 11, 2010; DSH000141_003EN 15 HAL 2xy DATA SHEET 4.4. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 4–1). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Applications with this arrangement passed the EMC tests according to the product standards ISO 7637. Please contact Micronas for the detailed investigation reports with the EMC and ESD results. RV 220 Ω 1 RL VDD VEMC VP 1.2 kΩ OUT 3 4.7 nF 20 pF 2 GND Fig. 4–1: Test circuit for EMC investigations 16 Jan. 11, 2010; DSH000141_003EN Micronas HAL 2xy DATA SHEET 5. Data Sheet History 1. Advance Information: “HAL2xy Hall-Effect Sensor Family”, June 21, 2006, 6251-703-1AI. First release of the advance information. 2. Advance Information: “HAL2xy Hall-Effect Sensor Family”, Jan. 17, 2007, AI000007_002EN. Second release of the advance information. Major changes: – Type HAL220 added 3. Data Sheet: “HAL2xy Hall-Effect Sensor Family”, Aug. 24, 2007, DSH000141_001EN. First release of the data sheet. Major changes: – Section 3.1. Outline Dimensions updated – Section 3.2. Dimensions of Sensitive Area updated – Section 3.6. Characteristics updated – Section 3.7. Magnetic Characteristics Overview updated – Type HAL206 added – Type HAL207 added – Type HAL221 added 4. Data Sheet: “HAL 2xy Hall-Effect Sensor Family”, June 11, 2008, DSH000141_002EN. Second release of the data sheet. Major changes: – Type HAL208 added – Type HAL210 added – Section 3.1. Outline Dimensions: drawing TO92UA-5 (spread leads) removed – Section 3.7. Magnetic Characteristics Overview: HAL 221 and values for hysteresis BHYS updated 5. Data Sheet: “HAL 2xy Hall-Effect Sensor Family”, Jan. 11, 2010, DSH000141_003EN. Second release of the data sheet. Major changes: – Type HAL 211 added – Type HAL 212 added – Explanation on page 5 added: “Unipolar Switching Sensors with Inverted Output Sensitive to North Pole” Micronas GmbH Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: [email protected] ⋅ Internet: www.micronas.com 17 Jan. 11, 2010; DSH000141_003EN Micronas