DCR106-3 THRU DCR106-8 DC COMPONENTS CO., LTD. DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 100 to 600 Volts CURRENT - 4.0 Amperes Description * Driven directly with IC and MOS device * Feature proprietary, void-free glass passivated chips * Available in voltage ratings from 100 to 600 volts * Sensitive gate trigger current * Designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors TO-126 .304(7.72) .285(7.52) Pinning .041(1.05) .037(0.95) 1 = Cathode, 2 = Anode, 3 = Gate Characteristic Symbol Rating VDRM, VRRM 100 200 400 600 V On-State RMS Current (TA=57oC, 180o Conduction Angles) IT(RMS) 4.0 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60Hz) ITSM 25 A Forward Peak Gate Current IGM 1.0 A Peak Repetitive Off-State DCR106-3 DCR106-4 DCR106-6 DCR106-8 Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Operating Junction Temperature Storage Temperature Unit 0.5 W 0.1 W -40 to +110 -40 to +150 o 3 Typ 2 3 o 3 Typ .052(1.32) .048(1.22) .620(15.75) .600(15.25) PGM TJ .279(7.09) .275(6.99) 1 PG(AV) TSTG .152(3.86) .138(3.50) .055(1.39) .045(1.14) .154(3.91) .150(3.81) Absolute Maximum Ratings(TA=25oC) Voltage and Reverse Voltage .105(2.66) .095(2.41) .022 Typ (0.55) .032(0.81) .028(0.71) o 3 Typ .189(4.80) .171(4.34) o 3 Typ o C Dimensions in inches and (millimeters) o C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Peak Repetitive Forward or Reverse Off-State Blocking Current Symbol TJ=25oC TJ=110oC IDRM, IRRM Min Typ Max - - 10 - - 200 Unit Test Conditions µA VAK=Rated VDRM or VRRM RGK=1KΩ Peak Forward On-State Voltage VTM - - 2.0 V ITM=4A Peak Continuous DC Gate Trigger Current IGT - - 200 µA VAK=7V DC, RL=100Ω Continuous DC Gate Trigger Voltage VGT - - 0.8 V IH - - 5.0 mA DC Holding Current Critical Rate-of-Rise of Off-State Voltage Gate Controlled Turn-on Time(tD+tR) Thermal Resistance, Junction to Case VAK=7V DC, RL=100Ω RGK=1KΩ dv/dt - 8.0 - V/µS RGK=1KΩ Tgt - 2.2 - µsec IGT=10mA RθJC - 3.0 - o - C/W