Dc DCR106-4 Technical specifications of sensitive gate silicon controlled rectifiers voltage range - 100 to 600 volt Datasheet

DCR106-3
THRU
DCR106-8
DC COMPONENTS CO., LTD.
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
VOLTAGE RANGE - 100 to 600 Volts
CURRENT - 4.0 Amperes
Description
* Driven directly with IC and MOS device
* Feature proprietary, void-free glass passivated chips
* Available in voltage ratings from 100 to 600 volts
* Sensitive gate trigger current
* Designed for high volume, line-powered control
application in relay lamp drivers, small motor controls,
gate drivers for large thyristors
TO-126
.304(7.72)
.285(7.52)
Pinning
.041(1.05)
.037(0.95)
1 = Cathode, 2 = Anode, 3 = Gate
Characteristic
Symbol
Rating
VDRM,
VRRM
100
200
400
600
V
On-State RMS Current
(TA=57oC, 180o Conduction Angles)
IT(RMS)
4.0
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60Hz)
ITSM
25
A
Forward Peak Gate Current
IGM
1.0
A
Peak Repetitive Off-State
DCR106-3
DCR106-4
DCR106-6
DCR106-8
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Operating Junction Temperature
Storage Temperature
Unit
0.5
W
0.1
W
-40 to +110
-40 to +150
o
3 Typ
2 3
o
3 Typ
.052(1.32)
.048(1.22)
.620(15.75)
.600(15.25)
PGM
TJ
.279(7.09)
.275(6.99)
1
PG(AV)
TSTG
.152(3.86)
.138(3.50)
.055(1.39)
.045(1.14)
.154(3.91)
.150(3.81)
Absolute Maximum Ratings(TA=25oC)
Voltage and Reverse Voltage
.105(2.66)
.095(2.41)
.022
Typ
(0.55)
.032(0.81)
.028(0.71)
o
3 Typ
.189(4.80)
.171(4.34)
o
3 Typ
o
C
Dimensions in inches and (millimeters)
o
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Characteristic
Peak Repetitive Forward or Reverse
Off-State Blocking Current
Symbol
TJ=25oC
TJ=110oC
IDRM, IRRM
Min
Typ
Max
-
-
10
-
-
200
Unit
Test Conditions
µA
VAK=Rated VDRM or VRRM
RGK=1KΩ
Peak Forward On-State Voltage
VTM
-
-
2.0
V
ITM=4A Peak
Continuous DC Gate Trigger Current
IGT
-
-
200
µA
VAK=7V DC, RL=100Ω
Continuous DC Gate Trigger Voltage
VGT
-
-
0.8
V
IH
-
-
5.0
mA
DC Holding Current
Critical Rate-of-Rise of Off-State Voltage
Gate Controlled Turn-on Time(tD+tR)
Thermal Resistance, Junction to Case
VAK=7V DC, RL=100Ω
RGK=1KΩ
dv/dt
-
8.0
-
V/µS
RGK=1KΩ
Tgt
-
2.2
-
µsec
IGT=10mA
RθJC
-
3.0
-
o
-
C/W
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