Diode Semiconductor Korea DF005M---DF10M GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Amperes FEATURES DB-1 Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability. Reliable low cost construction utilizing molded plastic technique results in inexpensive product 8.8± 0.5 The plastic material has UL flammability classification 94V-0 8.3± 0.3 6.3± 0.2 1± 0.1 8.3± 0.1 Polarity : As marked on Body Weight : 0.02 ounces, 0.38 grams Mounting position : Any 2.5± 0.15 MECHANICAL DATA 5± 0.2 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL DF005M DF01M CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current VRRM VRMS VDC 50 35 50 100 70 100 DF02M DF04M DF06M 200 140 200 400 280 400 600 420 600 DF08M DF10M UNIT 800 560 800 1000 700 1000 V V V I(AV) 1.0 A IFSM 50 A Maximum forward Voltage at 1.0A DC VF 1.1 V Maximum DC Reverse Current at Rated DC Blocking Voltage IR 10 500 uA @TA=40 C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC METHOD) @TJ =25 C @TJ =125 C 2 2 2 I t Rating for fusing (t < 8.3ms) I t 10.4 AS Typical Junction Capacitance per element (Note 1) CJ 25 pF R0JA 40 C/W TJ -55 to +150 C TSTG -55 to +150 C Typical Thermal Resistance (Note 2) Operating Temperature Range Storage Temperature Range NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2.Thermal resistance from junction to ambient mounted on P.C.B with 0.5x0.5"(13x13mm) copper pads. www.diode.kr DF005M---DF10M Diode Semiconductor Korea 0.8 0.6 0.4 0.2 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 0.1 20 40 60 80 100 120 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 1.0 50 40 30 20 10 Single Half-Sine-Wave (JEDEC METHOD) 0 140 1 2 5 AMBIENT TEMPERATURE , C 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.3 - TYPICAL JUNCTION CAPACITANCE 100 INSTANTANEOUS FORWARD CURRENT ,(A) 10 10 1.0 TJ = 25 C 0.1 PULSE WIDTH 300us 2% DUTY CYCLE TJ = 25 C, f = 1MHz 1.0 .01 0.1 1.0 4.0 100 10.0 0 REVERSE VOLTAGE , VOLTS 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE , VOLTS FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT ,(uA) CAPACITANCE , (pF) 20 10 NUMBER OF CYCLES AT 60Hz TJ = 125 C 10 1.0 TJ = 25 C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) www.diode.kr