Data Sheet NP90N06VDK R07DS1297EJ0100 Rev.1.00 Oct 26, 2015 60 V – 90 A – N-channel Power MOS FET Application: Automotive Description NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance ⎯ RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) • Designed for automotive application and AEC-Q101 qualified Outline Drain Body Diode Gate Source TO-252(MP-3ZP) Equivalent circuit Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Ordering Information Part No. NP90N06VDK-E1-AY *1 NP90N06VDK-E2-AY *1 Note: Lead Plating Pure Sn (Tin) Packing Taping (E1 type) Tape 2500 p/reel Taping (E2 type) Package TO-252(MP-3ZP) *1. Pb-free (This product does not contain Pb in the external electrode) R07DS1297EJ0100 Rev.1.00 Oct 26, 2015 Page 1 of 7 NP90N06VDK Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current ∗2 Repetitive Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 60 ±20 ±90 ±360 147 1.2 175 −55 to +175 33 108 Unit V V A A W W °C °C A mJ Notes: *1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% *2. RG = 25 Ω, VGS = 20 V → 0 V Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance R07DS1297EJ0100 Rev.1.00 Oct 26, 2015 Rth(ch-C) Rth(ch-A) 1.02 125 °C/W °C/W Page 2 of 7 NP90N06VDK Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance ∗1 Symbol IDSS IGSS VGS(th) | yfs | Drain to Source On-state Resistance ∗1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Reverse Recovery Charge Qrr Note: Min Typ 1.5 40 2.1 80 3.8 4.9 4000 360 110 24 7 60 6 63 15 12 0.9 40 Max 1 ±100 2.5 Unit μA nA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns 5.3 8.2 6000 540 200 60 20 120 20 95 1.5 45 nC Test Conditions VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μA VDS = 5 V, ID = 45 A VGS = 10 V, ID = 45 A VGS = 4.5 V, ID = 23 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 30 V, ID = 45 A, VGS = 10 V, RG = 0 Ω VDD = 48 V, VGS = 10 V, ID = 90 A IF = 90 A, VGS = 0 V IF = 90 A, VGS = 0 V, di/dt = 100 A/μs *1. Pulsed test TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω RL Wave Form RG PG. VDD VGS VGS VDD 0 VGS 10% 90% VDS 90% ID IAS 90% VDS VGS 0 BVDSS VDS 10% 0 10% Wave Form VDS VDD Starting Tch τ τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE PG. D.U.T. IG = 2 mA RL 50 Ω VDD R07DS1297EJ0100 Rev.1.00 Oct 26, 2015 Page 3 of 7 NP90N06VDK Typical Characteristics (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 160 100 Pt – Total Power Dissipation - W dT - Percentage of Rated Power - % 120 80 60 40 20 120 80 40 0 0 50 100 150 0 200 0 TC - Case Temperature - °C 50 100 150 200 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse)=360A ID - Drain Current - A 100 ID(DC)=90A 10 1 Power Dissipation Limited 0.1 TC=25℃ Single Pulse 0.01 0.1 1 10 100 VDS - Drain to Source Voltage – V Rth(t) - Transient Thermal Resistance - °C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Rth(ch-A) = 125°C/W 100 10 Rth(ch-C) = 1.02°C/W 1 0.1 Single pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS1297EJ0100 Rev.1.00 Oct 26, 2015 Page 4 of 7 NP90N06VDK DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE 400 100 10 300 TA=175°C 75°C 25°C -55°C ID - Drain Current - A ID - Drain Current - A VGS=10V 200 VGS=4.5V 100 1 0.1 0.01 VDS = 10V Pulsed Pulsed 0 0.001 0 0.5 1 1.5 2 2.5 3 3.5 0 VDS - Drain to Source Voltage - V 3 4 GATE TO SOURCE THRESHOLD VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs. CHANNEL TEMPERATURE CURRENT DRAIN 1000 2 1 VDS = VGS ID=250μA 0 -100 -50 0 50 100 150 200 | yfs | - Forward Transfer Admittance - S VGS(th) – Gate to Source Threshold Voltage - V 2 VGS - Gate to Source Voltage - V 3 TA=175°C 150°C 75°C 25°C -55°C 100 10 VDS = 5V Pulsed 1 0.1 Tch - Channel Temperature - °C VGS=10V 4.5V 6 4 2 Pulsed 0 10 ID - Drain Current - A R07DS1297EJ0100 Rev.1.00 Oct 26, 2015 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ 10 1 100 GATE TO SOURCE VOLTAGE 12 0.1 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 8 1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. RDS(on) - Drain to Source On-state Resistance - mΩ 1 12 Pulsed 10 8 6 4 2 ID=45A 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Page 5 of 7 NP90N06VDK DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 12 Pulsed 4 VGS=10V ID=45A 2 100 Crss VGS = 0V f = 1.0MHz 10 -50 0 50 100 150 0.01 200 1 10 100 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS 50 1000 VDD = 30V VGS=10V RG=0Ω 100 VDS - Drain to Source Voltage - V td(on),tr,td(off),tr – Switching Time - ns 0.1 td(off) td(on) 10 tr tf 10 VDD= 48V 30V 12V 40 8 30 6 VGS 20 4 10 2 VDS ID=90A 0 1 0.1 1 10 0 0 100 VGS - Gate to Source Voltage - V 0 -100 Coss f Ad i 6 1000 T VGS=4.5V ID=23A 8 S Ciss 10 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ CHANNEL TEMPERATURE 10 20 30 40 50 60 70 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 trr – Reverse Recovery Time - ns IF - Diode Forward Current - A 1000 VGS=10V 100 4.5V 0V 10 1 Pulsed 0.1 0 0.2 0.4 0.6 0.8 1 VF(S-D) - Source to Drain Voltage - V R07DS1297EJ0100 Rev.1.00 Oct 26, 2015 1.2 10 di/dt = 100A/μs VGS = 0V 1 0.1 1 10 100 IF - Drain Current - A Page 6 of 7 NP90N06VDK Package Drawings (Unit: mm) TO-252 (MP-3ZP) (Mass: 0.3 g TYP.) Renesas package code: PRSS0004ZP-A 2.3±0.1 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 0.5±0.1 No Plating 2 3 0.8 1 1.14 MAX. 0.51 MIN. 1.13 6.1±0.2 10.4 MAX. (9.8 TYP.) 4.0 MIN. 4 No Plating 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) R07DS1297EJ0100 Rev.1.00 Oct 26, 2015 0 to 0.25 0.5±0.1 0.76±0.12 2.3 1.0 Page 7 of 7 Revision History NP90N06VDK Data Sheet Description Rev. 1.00 Date Oct. 26, 2015 Page — Summary First Edition Issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. 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