MBRT50020 thru MBRT50040R
Silicon Power
Schottky Diode
VRRM = 20 V - 40 V
IF(AV) = 500 A
Features
• High Surge Capability
• Types from 20 V to 40 V VRRM
Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MBRT50020(R) MBRT50030(R) MBRT50035(R) MBRT50040(R) Unit
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
20
30
35
40
V
RMS reverse voltage
VRMS
14
21
25
28
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
30
-55 to 150
-55 to 150
35
-55 to 150
-55 to 150
40
-55 to 150
-55 to 150
V
°C
°C
20
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
Average forward current (per
pkg)
IF(AV)
TC =125 °C
500
500
500
500
A
Peak forward surge current
(per leg)
IFSM
tp = 8.3 ms, half sine
3500
3500
3500
3500
A
Maximum instantaneous
forward voltage (per leg)
VF
IFM = 250 A, Tj = 25 °C
0.75
0.75
0.75
0.75
V
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
IR
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
10
50
1
10
50
1
10
50
1
10
50
mA
0.30
0.30
0.30
0.30
°C/W
Parameter
MBRT50020(R) MBRT50030(R) MBRT50035(R) MBRT50040(R) Unit
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
RΘJC
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MBRT50020 thru MBRT50040R
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MBRT50020 thru MBRT50040R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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