JMNIC BFQ591 Npn 7 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BFQ591
NPN 7 GHz wideband transistor
Product specification
Supersedes data of 2002 Jan 07
2002 Feb 04
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
FEATURES
PINNING
• High power gain
PIN
• Low noise figure
1
emitter
• High transition frequency
2
collector
• Gold metallization ensures excellent reliability.
3
base
DESCRIPTION
APPLICATIONS
Intended for applications in the GHz range such as MATV
or CATV amplifiers and RF communications subscribers
equipment.
handbook, halfpage
DESCRIPTION
1
NPN wideband transistor in a SOT89 plastic package.
Bottom view
2
3
MBK514
MARKING
TYPE NUMBER
MARKING CODE
BFQ591
Fig.1 Simplified outline (SOT89).
BCp
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCEO
collector-emitter voltage
open base
−
−
15
V
IC
collector current (DC)
−
−
200
mA
W
Ptot
total power dissipation
Ts ≤ 90 °C; note 1
−
−
2.25
hFE
DC current gain
IC = 70 mA; VCE = 8 V
60
90
250
Cre
feedback capacitance
IC = 0; VCB = 12 V; f = 1 MHz
−
0.8
−
pF
fT
transition frequency
IC = 70 mA; VCE = 12 V;
f = 1 GHz
−
7
−
GHz
GUM
maximum unilateral power gain
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 °C
−
11
−
dB
|s21|2
insertion power gain
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 °C
−
10
−
dB
Note
1. Ts is the temperature at the soldering point of the collector pin.
2002 Feb 04
2
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
200
mA
Ptot
total power dissipation
−
2.25
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
Ts ≤ 90 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction
to soldering point
CONDITIONS
Ts ≤ 90 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
2002 Feb 04
3
VALUE
UNIT
38
K/W
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage IC = 0.1 mA; IE = 0
−
−
20
V
V(BR)CES
collector-emitter breakdown
voltage
IC = 0.1 mA; IB = 0
−
−
15
V
V(BR)EBO
emitter-base breakdown voltage
IE = 0.1 mA; IC = 0
−
−
3
V
ICBO
collector-base leakage current
IE = 0; VCB = 10
−
−
100
nA
hFE
DC current gain
IC = 70 mA ; VCE = 8 V
60
90
250
Cre
feedback capacitance
IC = 0; VCB = 12 V; f = 1 MHz
−
0.8
−
pF
fT
transition frequency
IC = 70 mA; VCE = 12 V;
f = 1 GHz
−
7
−
GHz
GUM
maximum unilateral power gain;
note 1
IC = 70 mA; VCE = 12 V;
Tamb = 25 °C
−
11
−
dB
f = 900 MHz
−
5.5
−
dB
|s21|2
insertion power gain
IC = 70 mA; VCE = 12 V;
f = 1 GHz; Tamb = 25 °C
−
10
−
dB
Vo
output voltage
note 2
−
700
−
mV
f = 2 GHz
Notes
2
s 21
1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log ------------------------------------------------------- dB .
2
2
( 1 – s 11 ) ( 1 – s 22 )
2. dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz;
measured at f(p+q+r) = 793.25 MHz.
2002 Feb 04
4
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
MLD796
3
MRA749
250
handbook, halfpage
handbook, halfpage
hFE
Ptot
(W)
200
2
150
100
1
50
0
10−2
0
50
0
100
150
Ts (°C)
200
10−1
1
10
IC (mA)
102
VCE = 12 V.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.2 Power derating curve.
MLD797
1.2
MLD798
8
handbook, halfpage
handbook, halfpage
Cre
fT
(GHz)
(pF)
6
0.8
4
0.4
2
0
0
4
0
8
12
VCB (V)
10
1
16
IC = 0; f = 1 MHz.
VCE = 12 V; f = 1 GHz.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage; typical values.
2002 Feb 04
5
IC (mA)
102
Transition frequency as a function of
collector current.
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
MLD799
gain
10
gain
(dB)
20
(dB)
8
15
6
25
handbook, halfpage
MLD800
handbook, halfpage
MSG
GUM
Gmax
GUM
10
4
5
2
0
0
0
40
80
IC (mA)
40
0
120
VCE = 12 V; f = 900 MHz.
VCE = 12 V; f = 2 GHz.
Fig.6
Fig.7
Gain as a function of collector current;
typical values.
MLD801
40
handbook, halfpage
gain
(dB)
30
MSG
20
GUM
Gmax
10
MSG
0
10
102
103
f (MHz)
104
IC = 70 mA; VCE = 12 V.
Fig.8
Gain as a function of frequency; typical
values.
2002 Feb 04
6
80
IC (mA)
120
Gain as a function of collector current;
typical values.
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
MLD802
−30
MLD803
−30
d2
handbook, halfpage
handbook, halfpage
dim
(dB)
(dB)
−40
−40
−50
−50
−60
−60
−70
−70
−80
0
40
80
IC (mA)
120
0
40
80
IC (mA)
120
Vo = 700 mV; VCE = 12 V; Tamb = 25 °C; f(p+q+r) = 793.25 MHz.
Vo = 316 mV; VCE = 12 V; f(p+q) = 810 MHz.
Fig.9
Fig.10 Second order intermodulation distortion as
function of collector current; typical values.
Intermodulation distortion as function of
collector current; typical values.
2002 Feb 04
7
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
SPICE parameters for the BFQ591 die.
SEQUENCE No.
PARAMETER
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJ
TR
CJS
VJS
MJS
FC
22
23
24
25
26
27
28
29
30
31
32
33
34
35(1)
36(1)
37(1)
38
VALUE
1.341
123.5
.988
75.85
9.656
232.2
2.134
10.22
1.016
1.992
294.1
211.0
997.2
5.00
1.000
5.00
1.275
920.6
0.000
1.110
3.000
3.821
600.0
348.5
13.60
71.73
10.28
1.929
0.000
1.409
219.4
166.5
2.340
543.7
0.000
750.0
0.000
733.2
UNIT
fA
−
−
V
mA
fA
−
−
−
V
mA
aA
−
Ω
µA
Ω
Ω
Ω
−
eV
−
pF
mV
−
ps
−
V
mA
deg
fF
mV
−
−
ps
F
mV
−
−
L1
LB
B
L2
B'
C'
E'
C be
C
Cce
LE
MBC964
L3
E
QLB = 50;QLE = 50;QLB,E(f) = QLB,E√(f/fc);
fc = scaling frequency = 1 GHz.
Fig.11 Package equivalent circuit SOT89.
List of components (see Fig.11)
DESIGNATION
Note
1. These parameters have not been extracted, the
default values are shown.
2002 Feb 04
C cb
handbook, halfpage
8
VALUE
UNIT
Cbe
16
fF
Ccb
150
fF
Cce
150
fF
L1
1
nH
L2
0.01
nH
L3
1
nH
LB
1.2
nH
LE
1.2
nH
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
b3
E
HE
L
1
2
3
c
b2
w M
b1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b1
b2
b3
c
D
E
e
e1
HE
L
min.
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
0.8
0.13
OUTLINE
VERSION
SOT89
2002 Feb 04
REFERENCES
IEC
JEDEC
EIAJ
TO-243
SC-62
9
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Feb 04
10
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
NOTES
2002 Feb 04
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA74
© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
613516/03/pp12
Date of release: 2002
Feb 04
Document order number:
9397 750 09271
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