SuperSOT SOT23 NPN SILICON POWER (SWITCHING) TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ. Extremely Low Equivalent On Resistance; RCE(sat) E C B DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat) FMMT617 FMMT717 617 50mΩ at 3A FMMT618 FMMT718 618 50mΩ at 2A FMMT619 FMMT720 619 75mΩ at 2A FMMT624 FMMT723 624 - FMMT625 625 - ABSOLUTE MAXIMUM RATINGS. FMMT FMMT FMMT FMMT FMMT 617 618 619 624 625 PARAMETER SYMBOL Collector-Base Voltage VCBO 15 20 50 125 150 V Collector-Emitter Voltage VCEO 15 20 50 125 150 V Emitter-Base Voltage VEBO 5 5 5 5 5 V Peak Pulse Current** ICM 12 6 6 3 3 A Continuous Collector Current IC 3 2.5 2 1 1 A Base Current IB 500 mA Power Dissipation at Tamb=25°C* Ptot 625 mW -55 to +150 °C Operating and Storage Temperature Tj:Tstg Range UNIT * Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices 3 - 149 FMMT617 FMMT617 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 15 Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO MAX. TYPICAL CHARACTERISTICS UNIT CONDITIONS. 70 V IC=100µA 15 18 V IC=10mA* 100m 5 8.2 V IE=100µA 10m 1 0.4 +25 °C IC/IB=60 0.3 0.2 100 nA VCB=10V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector Emitter Cut-Off Current ICES 100 nA VCES=10V Collector-Emitter Saturation Voltage VCE(sat) 8 70 150 14 100 200 mV mV mV IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=50mA* 0.9 1.0 V IC=3A, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current hFE Transfer Ratio 0.84 200 300 200 150 415 450 320 240 80 80 120 1.0 V IC=3A, VCE=2V* IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=3A, VCE=2V* IC=5A, VCE=2V* IC=12A, VCE=2V* MHz IC=50mA, VCE=10V f=50MHz pF VCB=10V, f=1MHz 120 ns 160 ns VCC=10V, IC=3A IB1=IB2=50mA Transition Frequency fT Output Capacitance Cobo 30 Turn-On Time t(on) Turn-Off Time t(off) 40 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% IC/IB=100 IC/IB=60 IC/IB=10 1m 1m 10m 1 100m 100°C 25°C -55°C 0.1 0.0 1mA 10 10mA 1.0 1.4 VCE=2V 100A 450 25°C 10A 100A IC/IB=60 1.2 1.0 0.8 0.6 10A VCE(SAT) vs IC VCE(SAT) v IC 100°C 1A Collector Current IC - Collector Current (A) 1.2 100mA -55°C 0.8 -55°C 0.4 25°C 0.6 225 100°C 0.4 0.2 0.2 0.0 1mA 10mA 100mA 1A 10A 0 100A 0.0 1mA 10mA Collector Current 1A Collector Current hFE vs IC 1.4 100mA VBE(SAT) vs IC SINGLE PULSE TEST Tamb = 25 deg C VCE=2V 10 1.2 1.0 0.8 0.6 1.0 -55°C D.C. 1s 100ms 10ms 1ms 100µs 25°C 100°C 0.1 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A 100A Collector Current 0.1 1.0 10 VCE (VOLTS) VBE(ON) vs IC 3 - 150 0.01 Safe Operating Area 3 - 151 100 FMMT617 FMMT617 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 15 Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO MAX. TYPICAL CHARACTERISTICS UNIT CONDITIONS. 70 V IC=100µA 15 18 V IC=10mA* 100m 5 8.2 V IE=100µA 10m 1 0.4 +25 °C IC/IB=60 0.3 0.2 100 nA VCB=10V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector Emitter Cut-Off Current ICES 100 nA VCES=10V Collector-Emitter Saturation Voltage VCE(sat) 8 70 150 14 100 200 mV mV mV IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=50mA* 0.9 1.0 V IC=3A, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current hFE Transfer Ratio 0.84 200 300 200 150 415 450 320 240 80 80 120 1.0 V IC=3A, VCE=2V* IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=3A, VCE=2V* IC=5A, VCE=2V* IC=12A, VCE=2V* MHz IC=50mA, VCE=10V f=50MHz pF VCB=10V, f=1MHz 120 ns 160 ns VCC=10V, IC=3A IB1=IB2=50mA Transition Frequency fT Output Capacitance Cobo 30 Turn-On Time t(on) Turn-Off Time t(off) 40 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% IC/IB=100 IC/IB=60 IC/IB=10 1m 1m 10m 1 100m 100°C 25°C -55°C 0.1 0.0 1mA 10 10mA 1.0 1.4 VCE=2V 100A 450 25°C 10A 100A IC/IB=60 1.2 1.0 0.8 0.6 10A VCE(SAT) vs IC VCE(SAT) v IC 100°C 1A Collector Current IC - Collector Current (A) 1.2 100mA -55°C 0.8 -55°C 0.4 25°C 0.6 225 100°C 0.4 0.2 0.2 0.0 1mA 10mA 100mA 1A 10A 0 100A 0.0 1mA 10mA Collector Current 1A Collector Current hFE vs IC 1.4 100mA VBE(SAT) vs IC SINGLE PULSE TEST Tamb = 25 deg C VCE=2V 10 1.2 1.0 0.8 0.6 1.0 -55°C D.C. 1s 100ms 10ms 1ms 100µs 25°C 100°C 0.1 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A 100A Collector Current 0.1 1.0 10 VCE (VOLTS) VBE(ON) vs IC 3 - 150 0.01 Safe Operating Area 3 - 151 100 FMMT617 FMMT624 FMMT618 FMMT625 FMMT619 SuperSOT Series FMMT717 FMMT722 FMMT718 FMMT723 FMMT720 THERMAL CHARACTERISTICS AND DERATING INFORMATION DERATING CURVE MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate 3 - 158