PHILIPS BLF277 Vhf power mos transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BLF277
VHF power MOS transistor
Product specification
September 1992
Philips Semiconductors
Product specification
VHF power MOS transistor
FEATURES
BLF277
PIN CONFIGURATION
• High power gain
• Easy power control
• Gold metallization ensures
excellent reliability
• Good thermal stability
• Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
andbook, halfpage
1
2
d
3
4
g
MBB072
5
s
6
MSB006
The transistor is encapsulated in a
6-lead, SOT119 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
Fig.1 Simplified outline and symbol.
A marking code, showing gate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to the ‘General' section for further
information.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
PINNING - SOT119
PIN
WARNING
DESCRIPTION
1
source
2
source
3
gate
4
drain
5
source
6
source
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source circuit.
MODE OF OPERATION
CW, class-B
September 1992
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
175
50
150
> 14
> 50
2
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF277
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
110
V
±VGS
gate-source voltage
−
20
V
ID
DC drain current
−
16
A
Ptot
total power dissipation
−
220
W
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
200
°C
up to Tmb = 25 °C
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL
RESISTANCE
CONDITIONS
Rth j-mb
thermal resistance from junction to
mounting base
Tmb = 25 °C; Ptot = 220 W
0.8 K/W
Rth mb-h
thermal resistance from mounting
base to heatsink
Tmb = 25 °C; Ptot = 220 W
0.2 K/W
MGP219
MRA906
102
handbook, halfpage
300
handbook, halfpage
ID
(A)
Ptot
(W)
10
(1)
200
(2)
(1)
(2)
1
10−1
100
1
10
102
VDS (V)
0
103
0
(1) Current in this area may be limited by RDS(on).
(2) Tmb = 25 °C.
100
Th (°C)
150
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.2 DC SOAR.
September 1992
50
Fig.3 Power/temperature derating curves.
3
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF277
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VGS = 0; ID = 50 mA
110
−
−
V
V(BR)DSS
drain-source breakdown voltage
IDSS
drain-source leakage current
VGS = 0; VDS = 50 V
−
−
2.5
mA
IGSS
gate-source leakage current
±VGS = 20 V; VDS = 0
−
−
1
µA
VGS(th)
gate-source threshold voltage
ID = 50 mA; VDS = 10 V
2
−
4.5
V
∆VGS
gate-source voltage difference of
matched pairs
ID = 50 mA; VDS = 10 V
−
−
100
mV
gfs
forward transconductance
ID = 5 A; VDS = 10 V
4.5
6.2
−
S
RDS(on)
drain-source on-state resistance
ID = 5 A; VGS = 10 V
−
0.2
0.3
Ω
IDSX
on-state drain current
VGS = 10 V; VDS = 10 V
−
25
−
A
Cis
input capacitance
VGS = 0; VDS = 50 V; f = 1 MHz
−
480
−
pF
Cos
output capacitance
VGS = 0; VDS = 50 V; f = 1 MHz
−
190
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 50 V; f = 1 MHz
−
14
−
pF
MGP220
MGP221
0
30
handbook, halfpage
handbook, halfpage
T.C.
(mV/K)
ID
(A)
−1
20
−2
−3
10
−4
−5
10−2
10−1
0
1
ID (A)
0
10
5
VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.4
Fig.5
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
September 1992
4
10
VGS (V)
15
Drain current as a function of gate-source
voltage, typical values.
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF277
MGP222
0.4
MGE615
1200
handbook, halfpage
handbook, halfpage
RDS(on)
C
(pF)
(Ω)
0.3
800
0.2
Cis
400
0.1
Cos
0
0
0
50
100
Tj (°C)
0
150
20
ID = 5 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6
Fig.7
Drain-source on-state resistance as a
function of junction temperature, typical
values.
MGP223
150
handbook, halfpage
Crs
(pF)
100
50
0
0
20
40
VDS (V)
60
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
5
40
VDS (V)
60
Input and output capacitance as functions
of drain-source voltage, typical values.
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF277
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 16 Ω; unless otherwise specified.
RF performance in CW operation in a common source class-B test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(A)
PL
(W)
Gp
(dB)
ηD
(%)
175
50
0.1
150
> 14
typ. 17
> 50
typ. 58
CW, class-B
Ruggedness in class-B operation
The BLF277 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under the
following conditions:
VDS = 50 V; f = 175 MHz at rated load power.
MGP225
MGP224
200
100
ηD
25
handbook, halfpage
Gp
(dB)
handbook, halfpage
PL
(W)
(%)
20
80
Gp
15
150
60
ηD
100
10
40
5
20
50
0
50
0
100
150
0
0
200
250
PL (W)
0
2
4
6
PIN (W)
8
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
ZL = 1.4 + j1.6 Ω; f = 175 MHz.
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
ZL = 1.4 + j1.6 Ω; f = 175 MHz.
Fig.9
Fig.10 Load power as a function of input power,
typical values.
Power gain and efficiency as functions of
load power, typical values.
September 1992
6
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF277
,,
,
,,
,
handbook, full pagewidth
C14
C3
input
50Ω
C1
L1
C5
L4
L2
C2
L3
D.U.T.
L7
L5
C4
L6
L13
L10
L8
L9
C8
L11
L20
C15
C10
C11
C12
R3
C13
+ VDD
f = 175 MHz.
Fig.11 Test circuit for class-B operation.
September 1992
7
L18
L19
C18
MLA222
C8
R2
L17
C17
C9
R4
L15
output
50Ω
C19
L18
L14
L12
R1
C7
C18
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF277
List of components (class-B test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C8, C19
multilayer ceramic chip capacitor
(note 1)
680 pF
C2, C4, C17
film dielectric trimmer
5 to 60 pF
C3
multilayer ceramic chip capacitor
(note 1)
33 pF
C5, C6, C9
multilayer ceramic chip capacitor
(note 1)
100 pF
C7, C10, C13
multilayer ceramic chip capacitor
100 nF
2222 852 47104
C11
multilayer ceramic chip capacitor
10 nF
2222 852 47103
C12
electrolytic capacitor
10 µF, 63 V
C14, C15
multilayer ceramic chip capacitor
(note 2)
3 × 22 pF
in parallel
C16
film dielectric trimmer
4 to 40 pF
C18
multilayer ceramic chip capacitor
(note 1)
18 pF
L1
stripline (note 3)
49 Ω
length 8 mm
width 4 mm
L2
stripline (note 3)
49 Ω
length 12 mm
width 4 mm
L3
stripline (note 3)
49 Ω
length 7.5 mm
width 4 mm
L4
2 turns enamelled 1.5 mm copper
wire
25 nH
length 3.7 mm
int. dia. 5 mm
leads 2 × 1 mm
L5
stripline (note 3)
49 Ω
length 15.5 mm
width 4 mm
L6
stripline (note 3)
49 Ω
length 5 mm
width 4 mm
L7
2 turns enamelled 1.5 mm copper
wire
25 nH
length 4.2 mm
int. dia. 5 mm
leads 2 × 4 mm
L8
stripline (note 3)
31 Ω
length 18 mm
width 6 mm
L9
stripline (note 3)
31 Ω
length 6 mm
width 6 mm
L10, L12
stripline (note 3)
31 Ω
length 7 mm
width 6 mm
L11
3 turns enamelled 1.5 mm copper
wire
40 nH
length 6.8 mm
int. dia. 5 mm
leads 2 × 3 mm
L13
1 turn enamelled 1.5 mm copper
wire
3 nH
int. dia. 2.8 mm
leads 2 × 1 mm
L14
stripline (note 3)
36 Ω
length 15.5 mm
width 5 mm
September 1992
8
2222 809 08003
2222 809 08002
Philips Semiconductors
Product specification
VHF power MOS transistor
COMPONENT
BLF277
DESCRIPTION
VALUE
DIMENSIONS
L15
stripline (note 3)
36 Ω
length 8 mm
width 5 mm
L16
2 turns enamelled 2.5 mm copper
wire
28 nH
length 5.5 mm
int. dia. 5 mm
leads 2 × 3 mm
L17
stripline (note 3)
36 Ω
length 12 mm
width 5 mm
L18, L19
stripline (note 3)
36 Ω
length 8.5 mm
width 5 mm
L20
grade 3B Ferroxcube RF choke
R1
0.4 W metal film resistor
16 Ω
R2
10 turn potentiometer
50 kΩ
R3
0.4 W metal film resistor
400 kΩ
R4
0.4 W metal film resistor
100 kΩ
CATALOGUE NO.
4312 020 36642
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality.
3. The striplines are mounted double copper-clad printed circuit board, with epoxy glass dielectric (εr = 4.5);
thickness 1.6 mm.
September 1992
9
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF277
R2
handbook, full pagewidth
R3
L20
C12
R4
C1
L1 L2 L3
C2
C3
L4
L5
L6
L7
C5
C8
C7
C9
L14 C14 L16
R1
L8
C4
L11
C11 C13
C10
L9
L13
L10 L12
C6
C15
C16
C18
C19
L17 L18 L19
L15
C17
MBA394
191 mm
handbook, full pagewidth
strap
strap
rivets
rivets
70 mm
strap
mounting
screws
(6x)
strap
MBA393
The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets.
Fig.12 Component layout for 175 MHz class-B test circuit.
September 1992
10
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF277
MGP226
MGP227
10
10
handbook, halfpage
handbook, halfpage
ZL
(Ω)
8
Zi
(Ω)
ri
RL
6
0
4
xi
XL
2
−10
0
0
50
100
250
200
f (MHz)
150
0
50
100
150
200
250
f (MHz)
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
RGS = 16 Ω; PL = 150 W.
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
RGS = 16 Ω; PL = 150 W.
Fig.13 Input impedance as a function of frequency
(series components), typical values.
Fig.14 Load impedance as a function of frequency
(series components), typical values.
MGP228
40
handbook, halfpage
Gp
(dB)
30
20
handbook, halfpage
10
Zi
ZL
MBA379
0
0
50
100
150
200
250
f (MHz)
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
RGS = 16 Ω; PL = 150 W.
Fig.15 Definition of MOS impedance.
September 1992
Fig.16 Power gain as a function of frequency,
typical values.
11
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF277
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads
SOT119A
A
F
q
C
U1
B
H1
w2 M C
b2
2
H
c
4
6
p
U2
D1
U3
D
w1 M A B
A
1
3
5
b1
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
b1
b2
mm
7.39
6.32
5.59
5.33
5.34
5.08
4.07
3.81
inches
c
D
w2
w3
4.58
25.23 6.48 12.76
18.42
0.51
3.98
23.95 6.07 12.06
1.02
0.26
0.291 0.220 0.210 0.160 0.007 0.505 0.505
0.100 0.870 0.730 0.130 0.180
0.993 0.255 0.502
0.725
0.02
0.255
0.249 0.210 0.200 0.150 0.003 0.496 0.495
0.090 0.830 0.720 0.117 0.157
0.943 0.239 0.475
0.04
0.01
OUTLINE
VERSION
e
D1
0.18 12.86 12.83
6.48
0.07 12.59 12.57
F
H
JEDEC
EIAJ
SOT119A
September 1992
p
2.54 22.10 18.55 3.31
2.28 21.08 18.28 2.97
REFERENCES
IEC
H1
Q
q
U1
U2
U3
EUROPEAN
PROJECTION
w1
ISSUE DATE
97-06-28
12
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF277
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1992
13
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