DISCRETE SEMICONDUCTORS DATA SHEET BLF277 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF277 PIN CONFIGURATION • High power gain • Easy power control • Gold metallization ensures excellent reliability • Good thermal stability • Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. andbook, halfpage 1 2 d 3 4 g MBB072 5 s 6 MSB006 The transistor is encapsulated in a 6-lead, SOT119 flange envelope, with a ceramic cap. All leads are isolated from the flange. Fig.1 Simplified outline and symbol. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the ‘General' section for further information. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. PINNING - SOT119 PIN WARNING DESCRIPTION 1 source 2 source 3 gate 4 drain 5 source 6 source Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source circuit. MODE OF OPERATION CW, class-B September 1992 f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 175 50 150 > 14 > 50 2 Philips Semiconductors Product specification VHF power MOS transistor BLF277 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 110 V ±VGS gate-source voltage − 20 V ID DC drain current − 16 A Ptot total power dissipation − 220 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C up to Tmb = 25 °C THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE CONDITIONS Rth j-mb thermal resistance from junction to mounting base Tmb = 25 °C; Ptot = 220 W 0.8 K/W Rth mb-h thermal resistance from mounting base to heatsink Tmb = 25 °C; Ptot = 220 W 0.2 K/W MGP219 MRA906 102 handbook, halfpage 300 handbook, halfpage ID (A) Ptot (W) 10 (1) 200 (2) (1) (2) 1 10−1 100 1 10 102 VDS (V) 0 103 0 (1) Current in this area may be limited by RDS(on). (2) Tmb = 25 °C. 100 Th (°C) 150 (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. September 1992 50 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification VHF power MOS transistor BLF277 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VGS = 0; ID = 50 mA 110 − − V V(BR)DSS drain-source breakdown voltage IDSS drain-source leakage current VGS = 0; VDS = 50 V − − 2.5 mA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 50 mA; VDS = 10 V 2 − 4.5 V ∆VGS gate-source voltage difference of matched pairs ID = 50 mA; VDS = 10 V − − 100 mV gfs forward transconductance ID = 5 A; VDS = 10 V 4.5 6.2 − S RDS(on) drain-source on-state resistance ID = 5 A; VGS = 10 V − 0.2 0.3 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 25 − A Cis input capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 480 − pF Cos output capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 190 − pF Crs feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 14 − pF MGP220 MGP221 0 30 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) −1 20 −2 −3 10 −4 −5 10−2 10−1 0 1 ID (A) 0 10 5 VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.4 Fig.5 Temperature coefficient of gate-source voltage as a function of drain current, typical values. September 1992 4 10 VGS (V) 15 Drain current as a function of gate-source voltage, typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF277 MGP222 0.4 MGE615 1200 handbook, halfpage handbook, halfpage RDS(on) C (pF) (Ω) 0.3 800 0.2 Cis 400 0.1 Cos 0 0 0 50 100 Tj (°C) 0 150 20 ID = 5 A; VGS = 10 V. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature, typical values. MGP223 150 handbook, halfpage Crs (pF) 100 50 0 0 20 40 VDS (V) 60 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. September 1992 5 40 VDS (V) 60 Input and output capacitance as functions of drain-source voltage, typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF277 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 16 Ω; unless otherwise specified. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (A) PL (W) Gp (dB) ηD (%) 175 50 0.1 150 > 14 typ. 17 > 50 typ. 58 CW, class-B Ruggedness in class-B operation The BLF277 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 50 V; f = 175 MHz at rated load power. MGP225 MGP224 200 100 ηD 25 handbook, halfpage Gp (dB) handbook, halfpage PL (W) (%) 20 80 Gp 15 150 60 ηD 100 10 40 5 20 50 0 50 0 100 150 0 0 200 250 PL (W) 0 2 4 6 PIN (W) 8 Class-B operation; VDS = 50 V; IDQ = 0.1 A; ZL = 1.4 + j1.6 Ω; f = 175 MHz. Class-B operation; VDS = 50 V; IDQ = 0.1 A; ZL = 1.4 + j1.6 Ω; f = 175 MHz. Fig.9 Fig.10 Load power as a function of input power, typical values. Power gain and efficiency as functions of load power, typical values. September 1992 6 Philips Semiconductors Product specification VHF power MOS transistor BLF277 ,, , ,, , handbook, full pagewidth C14 C3 input 50Ω C1 L1 C5 L4 L2 C2 L3 D.U.T. L7 L5 C4 L6 L13 L10 L8 L9 C8 L11 L20 C15 C10 C11 C12 R3 C13 + VDD f = 175 MHz. Fig.11 Test circuit for class-B operation. September 1992 7 L18 L19 C18 MLA222 C8 R2 L17 C17 C9 R4 L15 output 50Ω C19 L18 L14 L12 R1 C7 C18 Philips Semiconductors Product specification VHF power MOS transistor BLF277 List of components (class-B test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C8, C19 multilayer ceramic chip capacitor (note 1) 680 pF C2, C4, C17 film dielectric trimmer 5 to 60 pF C3 multilayer ceramic chip capacitor (note 1) 33 pF C5, C6, C9 multilayer ceramic chip capacitor (note 1) 100 pF C7, C10, C13 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C11 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C12 electrolytic capacitor 10 µF, 63 V C14, C15 multilayer ceramic chip capacitor (note 2) 3 × 22 pF in parallel C16 film dielectric trimmer 4 to 40 pF C18 multilayer ceramic chip capacitor (note 1) 18 pF L1 stripline (note 3) 49 Ω length 8 mm width 4 mm L2 stripline (note 3) 49 Ω length 12 mm width 4 mm L3 stripline (note 3) 49 Ω length 7.5 mm width 4 mm L4 2 turns enamelled 1.5 mm copper wire 25 nH length 3.7 mm int. dia. 5 mm leads 2 × 1 mm L5 stripline (note 3) 49 Ω length 15.5 mm width 4 mm L6 stripline (note 3) 49 Ω length 5 mm width 4 mm L7 2 turns enamelled 1.5 mm copper wire 25 nH length 4.2 mm int. dia. 5 mm leads 2 × 4 mm L8 stripline (note 3) 31 Ω length 18 mm width 6 mm L9 stripline (note 3) 31 Ω length 6 mm width 6 mm L10, L12 stripline (note 3) 31 Ω length 7 mm width 6 mm L11 3 turns enamelled 1.5 mm copper wire 40 nH length 6.8 mm int. dia. 5 mm leads 2 × 3 mm L13 1 turn enamelled 1.5 mm copper wire 3 nH int. dia. 2.8 mm leads 2 × 1 mm L14 stripline (note 3) 36 Ω length 15.5 mm width 5 mm September 1992 8 2222 809 08003 2222 809 08002 Philips Semiconductors Product specification VHF power MOS transistor COMPONENT BLF277 DESCRIPTION VALUE DIMENSIONS L15 stripline (note 3) 36 Ω length 8 mm width 5 mm L16 2 turns enamelled 2.5 mm copper wire 28 nH length 5.5 mm int. dia. 5 mm leads 2 × 3 mm L17 stripline (note 3) 36 Ω length 12 mm width 5 mm L18, L19 stripline (note 3) 36 Ω length 8.5 mm width 5 mm L20 grade 3B Ferroxcube RF choke R1 0.4 W metal film resistor 16 Ω R2 10 turn potentiometer 50 kΩ R3 0.4 W metal film resistor 400 kΩ R4 0.4 W metal film resistor 100 kΩ CATALOGUE NO. 4312 020 36642 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality. 3. The striplines are mounted double copper-clad printed circuit board, with epoxy glass dielectric (εr = 4.5); thickness 1.6 mm. September 1992 9 Philips Semiconductors Product specification VHF power MOS transistor BLF277 R2 handbook, full pagewidth R3 L20 C12 R4 C1 L1 L2 L3 C2 C3 L4 L5 L6 L7 C5 C8 C7 C9 L14 C14 L16 R1 L8 C4 L11 C11 C13 C10 L9 L13 L10 L12 C6 C15 C16 C18 C19 L17 L18 L19 L15 C17 MBA394 191 mm handbook, full pagewidth strap strap rivets rivets 70 mm strap mounting screws (6x) strap MBA393 The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets. Fig.12 Component layout for 175 MHz class-B test circuit. September 1992 10 Philips Semiconductors Product specification VHF power MOS transistor BLF277 MGP226 MGP227 10 10 handbook, halfpage handbook, halfpage ZL (Ω) 8 Zi (Ω) ri RL 6 0 4 xi XL 2 −10 0 0 50 100 250 200 f (MHz) 150 0 50 100 150 200 250 f (MHz) Class-B operation; VDS = 50 V; IDQ = 0.1 A; RGS = 16 Ω; PL = 150 W. Class-B operation; VDS = 50 V; IDQ = 0.1 A; RGS = 16 Ω; PL = 150 W. Fig.13 Input impedance as a function of frequency (series components), typical values. Fig.14 Load impedance as a function of frequency (series components), typical values. MGP228 40 handbook, halfpage Gp (dB) 30 20 handbook, halfpage 10 Zi ZL MBA379 0 0 50 100 150 200 250 f (MHz) Class-B operation; VDS = 50 V; IDQ = 0.1 A; RGS = 16 Ω; PL = 150 W. Fig.15 Definition of MOS impedance. September 1992 Fig.16 Power gain as a function of frequency, typical values. 11 Philips Semiconductors Product specification VHF power MOS transistor BLF277 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT119A A F q C U1 B H1 w2 M C b2 2 H c 4 6 p U2 D1 U3 D w1 M A B A 1 3 5 b1 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 b2 mm 7.39 6.32 5.59 5.33 5.34 5.08 4.07 3.81 inches c D w2 w3 4.58 25.23 6.48 12.76 18.42 0.51 3.98 23.95 6.07 12.06 1.02 0.26 0.291 0.220 0.210 0.160 0.007 0.505 0.505 0.100 0.870 0.730 0.130 0.180 0.993 0.255 0.502 0.725 0.02 0.255 0.249 0.210 0.200 0.150 0.003 0.496 0.495 0.090 0.830 0.720 0.117 0.157 0.943 0.239 0.475 0.04 0.01 OUTLINE VERSION e D1 0.18 12.86 12.83 6.48 0.07 12.59 12.57 F H JEDEC EIAJ SOT119A September 1992 p 2.54 22.10 18.55 3.31 2.28 21.08 18.28 2.97 REFERENCES IEC H1 Q q U1 U2 U3 EUROPEAN PROJECTION w1 ISSUE DATE 97-06-28 12 Philips Semiconductors Product specification VHF power MOS transistor BLF277 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1992 13