MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE CM200DU-34KA ● IC ................................................................... 200A ● VCES .......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point 25 25 18 14 7 18 14 29 +1.0 –0.5 G1 E1 0.5 0.5 4 2.8 LABEL 0.5 0.5 4 7 2.5 7.5 18 14 21.5 ±0.25 21 93 E2 G2 6 15 C1 4-φ6.5 MOUNTING HOLES 3-M6 NUTS 80 18.25 E2 CIRCUIT DIAGRAM 8.5 C2E1 C1 E2 C2E1 6 G1 E1 CM (18.5) (8.25) 62 ±0.25 E2 G2 110 Feb. 2009 MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 1700 ±20 200 400 200 400 1100 –40 ~ +150 –40 ~ +125 3500 3.5 ~ 4.5 3.5 ~ 4.5 580 (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Unit V V A A W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Parameter Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V 4 5.5 7 V IGES Gate leakage current ±VGE = VGES, VCE = 0V — — — — — — — — — — — — — — — — — — — — 3.2 3.8 — — — 900 — — — — — 9.6 — 2.2 — — 0.02 — 0.5 4.0 — 29 4.8 1.5 — 600 200 700 800 600 — 4.6 — 0.11 0.18 — µA VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge VEC(Note 1) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Thermal resistance*1 Contact thermal resistance Thermal resistance Tj = 25°C Tj = 125°C IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 1000V, IC = 200A, VGE = 15V VCC = 1000V, IC = 200A VGE = ±15V RG = 1.6Ω, Inductive load IE = 200A IE = 200A, VGE = 0V, Tj = 25°C IE = 200A, VGE = 0V, Tj = 125°C IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips mA V nF nC ns ns µC V V K/W 0.05✽3 Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 12 VGE = 20V 15 14 300 10 200 9 100 8 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 400 11 0 2 4 6 8 200 100 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 VGE = 15V Tj = 25°C 5 Tj = 125°C 4 3 2 1 0 0 100 200 300 400 Tj = 25°C 8 6 IC = 400A 4 IC = 200A 2 0 IC = 80A 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 20 102 7 5 3 2 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25°C 102 7 5 3 2 101 7 5 3 2 100 10 COLLECTOR CURRENT IC (A) 103 EMITTER CURRENT IE (A) VCE = 10V Tj = 25°C Tj = 125°C 300 0 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) Tj = 25°C COLLECTOR CURRENT (A) 400 1 2 3 4 5 7 5 3 2 Cies 101 7 5 3 2 100 7 5 Coes Cres 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIMES (ns) 104 7 5 3 2 103 tf td(off) 7 td(on) 5 3 2 Conditions: VCC = 1000V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load 102 7 5 3 2 tr 101 1 10 2 3 5 7 102 2 3 5 7 103 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 trr 102 Irr 7 5 Conditions: VCC = 1000V VGE = ±15V RG = 1.6Ω Tj = 25°C Inductive load 3 2 101 1 10 COLLECTOR CURRENT IC (A) 2 3 10–3 GATE-EMITTER VOLTAGE VGE (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) 3 2 7 5 3 2 10–2 10–2 7 5 3 2 20 10–1 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 5 7 103 3 GATE CHARGE CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.11K/ W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.18K/ W 100 10–1 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 7 5 3 2 5 7 102 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 IC = 200A 16 12 VCC = 1000V 8 4 0 TIME (s) VCC = 800V 0 200 400 600 800 1000 1200 GATE CHARGE QG (nC) Feb. 2009 4