Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41486 • Low Noise Figure: 1.4 dB Typical at 1.0␣ GHz 1.7 dB Typical at 2.0␣ GHz • High Associated Gain: 18.0 dB Typical at 1.0␣ GHz 13.0 dB Typical at 2.0␣ GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to “Tape-and-Reel Packaging for Semiconductor Devices”. Description Hewlett-Packard’s AT-41486 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41486 is housed in a low cost surface mount .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 Ω at 900 MHz, makes this device easy to use as a low noise amplifier. 86 Plastic Package Pin Connections EMITTER 4 414 Features BASE 1 The AT-41486 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 4-129 COLLECTOR 3 2 EMITTER 5965-8928E AT-41486 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Absolute Maximum[1] 1.5 20 12 60 500 150 -65 to 150 Units V V V mA mW °C °C Thermal Resistance [2,4]: θjc = 165°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6 mW/°C for TC > 68°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Part Number Ordering Information Part Number Increment Comments AT-41486-TR1 AT-41486-BLK 1000 100 Reel Bulk Note: For more information, see “Tape and Reel Packaging for Semiconductor Devices”. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max. |S21E|2 Insertion Power Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz f = 4.0 GHz dB 17.5 11.5 P1 dB f = 2.0 GHz dBm 18.0 G1 dB Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 25 mA 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB 13.5 NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA dB GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz 1.4 1.7 3.0 18.0 13.0 9.0 fT Gain Bandwidth Product: VCE = 8 V, IC = 25 mA hFE ICBO IEBO CCB Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz Note: 1. For this test, the emitter is grounded. 4-130 dB 17.0 GHz — µA µA pF 1.8 8.0 30 150 0.25 270 0.2 1.0 AT-41486 Typical Performance, TA = 25°C 14 14 18 13 8 9 6 6 4 NF50 Ω 3 NFO 0 0.5 1.0 2.0 2 4V 11 4 4V 6V 10 V GA 10 4.0 GHz 8 4.0 GHz 0 10 20 30 4 2 0 0 40 10 20 30 Figure 2. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f = 2.0 GHz. Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. VCE = 8 V. 40 20 35 20 MSG GAIN (dB) 12 |S21E|2 GAIN (dB) P1dB G1dB 1.0 GHz 16 30 16 40 IC (mA) IC (mA) 24 25 20 MAG 15 |S21E|2 10 8 12 2.0 GHz 8 4.0 GHz 4 5 4 0 0 10 20 30 40 IC (mA) Figure 4. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V, f = 2.0 GHz. 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 25 mA. 4-131 6 2.0 GHz NFO 1 0 3.0 4.0 5.0 Figure 1. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. P1 dB (dBm) 3 2 NFO FREQUENCY (GHz) G1 dB (dB) 12 6V GA 12 NF (dB) 12 GAIN (dB) 15 2.0 GHz 10 V GAIN (dB) GA NFO (dB) 21 GAIN (dB) 16 15 0 0 10 20 30 40 IC (mA) Figure 6. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. NFO (dB) 24 AT-41486 Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ Freq. S11 GHz Mag. Ang. 0.1 .74 -38 0.5 .59 -127 1.0 .56 -168 1.5 .57 169 2.0 .62 152 2.5 .63 142 3.0 .64 130 3.5 .68 122 4.0 .71 113 4.5 .74 105 5.0 .77 99 5.5 .79 93 6.0 .81 87 =␣ 10 mA dB 28.1 22.0 16.8 13.5 11.1 9.3 7.6 6.3 5.1 4.0 3.1 2.0 1.1 S21 Mag. 25.46 12.63 6.92 4.72 3.61 2.91 2.41 2.06 1.80 1.59 1.42 1.27 1.13 Ang. 157 107 84 69 56 47 37 26 16 7 -4 -13 -22 dB -39.6 -30.2 -27.7 -26.2 -24.8 -23.4 -22.2 -20.6 -19.5 -18.0 -17.2 -16.3 -15.4 S12 Mag. .011 .031 .041 .049 .058 .068 .078 .093 .106 .125 .139 .153 .170 Ang. 68 47 46 49 43 52 52 51 48 48 43 38 34 Mag. .94 .60 .49 .45 .42 .40 .39 .37 .35 .35 .35 .35 .35 S22 dB -41.3 -34.1 -29.9 -27.3 -24.8 -22.9 -21.6 -20.1 -18.8 -17.6 -16.6 -15.4 -14.5 S12 Mag. .009 .020 .032 .043 .058 .072 .083 .099 .115 .132 .149 .169 .188 Ang. 54 48 61 62 59 58 57 56 52 47 42 36 31 Mag. .85 .51 .46 .44 .43 .40 .38 .36 .34 .32 .31 .31 .33 Ang. -12 -29 -29 -32 -39 -42 -50 -60 -70 -84 -98 -114 -131 AT-41486 Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 25 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .50 -75 32.0 40.01 142 0.5 .55 -158 23.2 14.38 97 1.0 .57 177 17.5 7.50 78 1.5 .57 161 14.1 5.07 65 2.0 .59 148 11.5 3.75 53 2.5 .61 139 9.6 3.02 45 3.0 .65 128 8.0 2.52 34 3.5 .70 121 6.7 2.17 24 4.0 .74 113 5.7 1.92 14 4.5 .78 107 4.7 1.72 3 5.0 .78 102 3.7 1.53 -8 5.5 .78 96 2.7 1.36 -19 6.0 .76 91 1.6 1.21 -29 A model for this device is available in the DEVICE MODELS section. AT-41486 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz NFO dB 0.1 0.5 1.0 2.0 4.0 1.3 1.3 1.4 1.7 3.0 Γopt Mag .12 .10 .04 .12 .44 Ang 3 16 43 -145 -99 4-132 RN/50 0.17 0.17 0.16 0.16 0.40 S22 Ang. -17 -24 -24 -28 -35 -41 -49 -59 -72 -87 -106 -125 -144 86 Plastic Package Dimensions 0.51 ± 0.13 (0.020 ± 0.005) 4 45° C L 3 2.34 ± 0.38 (0.092 ± 0.015) 1 2 1.52 ± 0.25 (0.060 ± 0.010) 2.67 ± 0.38 (0.105 ± 0.15) 5° TYP. 0.66 ± 0.013 (0.026 ± 0.005) 0.203 ± 0.051 (0.006 ± 0.002) 8° MAX 0° MIN 2.16 ± 0.13 (0.085 ± 0.005) 0.30 MIN (0.012 MIN) DIMENSIONS ARE IN MILLIMETERS (INCHES) 4-133