MCR12LD, MCR12LM, MCR12LN Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half−wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed. http://onsemi.com SCRs 12 AMPERES RMS 400 thru 800 VOLTS Features • • • • • • • • Blocking Voltage to 800 Volts On−State Current Rating of 12 Amperes RMS at 80°C High Surge Current Capability − 100 Amperes Rugged, Economical TO−220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design High Immunity to dv/dt − 100 V/msec Minimum at 125°C Pb−Free Packages are Available* G A K MARKING DIAGRAM AY WW MCR12LxG AKA MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR12LD MCR12LM MCR12LN VDRM, VRRM On-State RMS Current (180° Conduction Angles; TC = 80°C) IT(RMS) 12 A ITSM 100 A I2t 41 A2sec PGM 5.0 W PG(AV) 0.5 W Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Forward Average Gate Power (t = 8.3 ms, TC = 80°C) Value Unit V IGM 2.0 A Operating Junction Temperature Range TJ −40 to 125 °C Storage Temperature Range Tstg −40 to 150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. December, 2005 − Rev. 2 2 TO−220AB CASE 221A−09 STYLE 3 3 400 600 800 Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 80°C) © Semiconductor Components Industries, LLC, 2005 1 1 A Y WW x G AKA = Assembly Location = Year = Work Week = D, M, or N = Pb−Free Package = Diode Polarity PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION Device Package Shipping MCR12LD TO−220AB 50 Units / Rail MCR12LDG TO−220AB (Pb−Free) 50 Units / Rail MCR12LM TO−220AB 50 Units / Rail MCR12LMG TO−220AB (Pb−Free) 50 Units / Rail MCR12LN TO−220AB 50 Units / Rail MCR12LNG TO−220AB (Pb−Free) 50 Units / Rail Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MCR12L/D MCR12LD, MCR12LM, MCR12LN THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol Value Unit RqJC RqJA 2.2 62.5 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Min Typ Max Unit IDRM, IRRM − − − − 0.01 2.0 mA Peak Forward On−State Voltage (Note 2) (ITM = 24 A) VTM − − 2.2 V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) IGT 2.0 4.0 8.0 mA Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) IH 4.0 10 20 mA Latch Current (VD = 12 V, Ig = 20 mA) IL 6.0 12 30 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) VGT 0.5 0.65 0.8 V Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 100 250 − V/ms Critical Rate of Rise of On−State Current IPK = 50 A; Pw = 40 msec; diG/dt = 1 A/msec, Igt = 50 mA di/dt − − 50 A/ms Characteristic OFF CHARACTERISTICS TJ = 25°C TJ = 125°C Peak Repetitive Forward or Reverse Blocking Current (VD = Rated VDRM and VRRM; Gate Open) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS 2. Indicates Pulse Test: Pulse Width v 1.0 ms, Duty Cycle v 2%. http://onsemi.com 2 MCR12LD, MCR12LM, MCR12LN Voltage Current Characteristic of SCR + Current Anode + VTM Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode − 1.0 VGT , GATE TRIGGER VOLTAGE (VOLTS) 10 GATE TRIGGER CURRENT (mA) 9 8 7 6 5 4 3 2 1 0 −40 −25 −10 5.0 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 −40 110 125 −10 5.0 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) 110 125 Figure 2. Typical Gate Trigger Voltage versus Junction Temperature Figure 1. Typical Gate Trigger Current versus Junction Temperature 100 100 IL , LATCHING CURRENT (mA) I H , HOLDING CURRENT (mA) −25 10 1.0 −40 −25 −10 5.0 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 10 1.0 −40 −25 −10 110 125 Figure 3. Typical Holding Current versus Junction Temperature 5.0 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) Figure 4. Typical Latching Current versus Junction Temperature http://onsemi.com 3 110 125 MCR12LD, MCR12LM, MCR12LN P (AV), AVERAGE POWER DISSIPATION (WATTS) 120 α α = CONDUCTION ANGLE 115 110 105 100 dc 95 α = 30° 90 0 1 2 60° 90° 180° 3 5 7 9 10 4 6 8 IT(RMS), RMS ON-STATE CURRENT (AMP) 11 12 20 180° 18 α α = CONDUCTION ANGLE 14 16 12 6 4 TJ = 125°C 2 0 0 1 2 3 4 5 6 7 8 9 10 11 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 6. On−State Power Dissipation 70 50 30 20 125°C 25°C 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.5 dc 8 100 10 90° α = 30° 10 Figure 5. Typical RMS Current Derating I T , INSTANTANEOUS ON−STATE CURRENT (AMPS) TC, CASE TEMPERATURE (° C) 125 1.5 2.0 2.5 1.0 VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) Figure 7. Typical On−State Characteristics http://onsemi.com 4 3.0 12 MCR12LD, MCR12LM, MCR12LN PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 CATHODE ANODE GATE ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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