KISEMICONDUCTOR BAS21A Sot-23 plastic-encapsulate diode Datasheet

KI SEMICONDUCTOR CO.
SOT-23 Plastic-Encapsulate Diodes
BAS21_A_C_S LT1
SWITCHING DIODE
SOT-23
FEATURES
Power dissipation
1. 0
mW (Tamb=25℃)
Forward Current
200 m A
IF:
Reverse Voltage
250
V
VR:
Operating and storage junction temperature range
0. 4
0. 95
TJ, Tstg: -55℃ to +150℃
BAS21LT1
Marking: JS
BAS21ALT1
Marking: JS2
BAS21CLT1
Marking: JS3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage
Forward
Diode
leakage current
voltage
capacitance
Reverse recovery time
0. 95
2. 9
2. 4
1. 3
1. 9
225
PD:
Symbol
Unit: mm
BAS21SLT1
Marking: JS4
unless otherwise specified)
Test
conditions
MIN
MAX
UNIT
V(BR)
IR= 100µA
IR
VR=200V
1
IF=100mA
1000
IF=200mA
1250
VR=0V, f=1MHz
5
pF
50
nS
VF
CD
t
rr
250
V
µA
mV
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