KI SEMICONDUCTOR CO. SOT-23 Plastic-Encapsulate Diodes BAS21_A_C_S LT1 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW (Tamb=25℃) Forward Current 200 m A IF: Reverse Voltage 250 V VR: Operating and storage junction temperature range 0. 4 0. 95 TJ, Tstg: -55℃ to +150℃ BAS21LT1 Marking: JS BAS21ALT1 Marking: JS2 BAS21CLT1 Marking: JS3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage capacitance Reverse recovery time 0. 95 2. 9 2. 4 1. 3 1. 9 225 PD: Symbol Unit: mm BAS21SLT1 Marking: JS4 unless otherwise specified) Test conditions MIN MAX UNIT V(BR) IR= 100µA IR VR=200V 1 IF=100mA 1000 IF=200mA 1250 VR=0V, f=1MHz 5 pF 50 nS VF CD t rr 250 V µA mV