BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Revision History: 2013-01-31, Revision 3.1 Previous Revision: 2012-10-31, Revision 3.0 Page Subjects (major changes since last revision) 37 Footprint recommendation drawing added 38 Marking pattern drawing updated Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. 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Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20 2.21 2.22 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Gain Mode Select Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Supply Current Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Logic Signal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Measured RF Characteristics 700 MHz Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Measured RF Characteristics 750 MHz Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Measured RF Characteristics 800 MHz Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Measured RF Characteristics 880 MHz Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Measured RF Characteristics 900 MHz band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Measured RF Characteristics 1100 MHz band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Measured Performance Band 13 Application High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . 19 Measured Performance Band 13 Application High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . 20 Measured Performance Band 13 Application Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . 21 Measured Performance Band 13 Application Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . 22 Measured Performance Band 5 Application High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 23 Measured Performance Band 5 Application High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 25 Measured Performance Band 5 Application Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 26 Measured Performance Band 5 Application Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 28 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700 MHz Band Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 MHz Band Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 MHz Band Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 880 MHz Band Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 MHz Band Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100 MHz Band Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 29 30 31 32 33 34 34 35 4 4.1 4.2 4.3 Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Product Marking Pattern . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 37 38 38 Data Sheet 4 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Data Sheet Block Diagram of Single-Band LNA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Application Circuit with Chip Outline (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Application Circuit with Chip Outline (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Application Circuit with Chip Outline (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Application Circuit with Chip Outline (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Application Circuit with Chip Outline (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Application Circuit with Chip Outline (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Application Board Layout on 3-layer FR4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Cross-Section view of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Detail of Application Board Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Footprint Recommendation 1 for the TSNP-7-1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Footprint Recommendation 2 for the TSNP-7-1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Package Outline (top, side and bottom view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Tape & Reel Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Marking Pattern (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 5 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Table 14 Table 15 Table 16 Table 17 Table 18 Table 19 Data Sheet Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 DC Characteristics, TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Typical switching times; TA = -30 ... 85 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Typical Characteristics 700 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 5.6 kΩ . . . . . . . . . . . . . . 13 Typical Characteristics 750 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 5.6 kΩ . . . . . . . . . . . . . . 14 Typical Characteristics 800 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 5.6 kΩ . . . . . . . . . . . . . . 15 Typical Characteristics 880 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = n/c . . . . . . . . . . . . . . . . 16 Typical Characteristics 900 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = n/c . . . . . . . . . . . . . . . . . 17 Typical Characteristics 1100 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 8.2 kΩ . . . . . . . . . . . . . 18 Parts List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Parts List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Parts List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Parts List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Parts List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Parts List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 6 Revision 3.1, 2013-01-31 SiGe Bipolar 3G/3.5G/4G Single-Band LNA 1 BGA751N7 Features Main features: • • • • • • • • • • Gain: 16 / -8 dB in high / low gain mode (f.e. at 850MHz) Noise figure: 1.05 dB in high gain mode (f.e. at 850MHz) Supply current: 3.3 / 0.5 mA in high / low gain mode Standby mode (< 2 μA typ.) Output internally matched to 50 Ω Inputs pre-matched to 50 Ω 2 kV HBM ESD protection Low external component count Small leadless TSNP-7-1 package (2.0 x 1.3 x 0.39 mm) Pb-free (RoHS compliant) package Description The BGA751N7 is a low current single-band low noise amplifier MMIC for 3G, 3.5G and 4G. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSNP-7-1 leadless green package. Because the matching is off chip, the RFpath can be easily converted into a 700MHz to 1150MHz path by optimizing the input and output matching network. This document specifies the electrical parameters, pinout, application circuit and packaging of the chip. Product Name Package Chip Marking BGA751N7 TSNP-7-1 T1533 B5 Data Sheet 7 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Features 6 1 RFIN 2 VEN RFOUT Biasing & Logic Circuitry 5 RREF 4 3 VGS VCC 7 GND BGA751N7_Chip_BlD.vsd Figure 1 Data Sheet Block Diagram of Single-Band LNA 8 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2 Electrical Characteristics 2.1 Absolute Maximum Ratings Table 1 Absolute Maximum Ratings Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC -0.3 – 3.6 V – Supply current ICC – – 10 mA – Pin voltage VPIN -0.3 – VCC+0.3 V All pins except RF input pins. Pin voltage RF Input Pins VRFIN -0.3 – 0.9 V – RF input power PRFIN – – 4 dBm – Junction temperature Tj – – 150 °C – Ambient temperature range TA -30 – 85 °C – Storage temperature range Tstg -65 – 150 °C – Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.2 Thermal Resistance Table 2 Thermal Resistance Parameter Symbol Thermal resistance junction to soldering point 2.3 ESD Integrity Table 3 ESD Integrity Parameter ESD hardness HBM1) RthJS Values Min. Typ. Max. – 150 – Symbol VESD-HBM Values Min. Typ. Max. – 2000 – Unit Note / Test Condition K/W – Unit Note / Test Condition V All pins 1) According to JESD22-A114 Data Sheet 9 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2.4 DC Characteristics Table 4 DC Characteristics, TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC 2.6 2.8 3.0 V – Supply current high gain mode ICCHG – 3.3 – mA Typical value without reference resistor Supply current low gain mode ICCLG – 0.5 – mA Supply current standby mode ICCOFF – 0.1 2.0 μA – Logic level high VHI 1.4 2.8 – V All logic pins Logic level low VLO -0.2 0.0 0.5 V Logic currents ILO – – 0.1 μA IHI – 5.0 6.0 μA 2.5 Gain Mode Select Truth Table Table 5 Truth Table All logic pins State Control Voltage All Bands VEN VGS HG LG H L OFF ON H H ON OFF L L STANDBY1) L H 1) In order to achieve minimum standby current it is encouraged to apply logic low-level at the VGS pin in standby mode although this is not mandatory. Details see section 2.4. 2.6 Switching Times Table 6 Typical switching times; TA = -30 ... 85 °C Parameter Settling time gainstep Data Sheet Symbol tGS Values Min. Typ. Max. – 1 – 10 Unit Note / Test Condition μs Switching LG ↔ HG Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2.7 Supply Current Characteristics Supply current and Power gain high gain mode versus reference resistor RREF (low gain mode supply current is independent of reference resistor). Note: In order to achieve higher gain an external reference resistor can be soldered between RREF (Pin 5) and ground (see Figure 3.4 on Page 32). Power Gain |S21| = f (RREF) VCC = 2.8 V, TA = 25 °C Supply Current ICC = f (RREF) VCC = 2.8 V, TA = 25 °C 18 7 6.5 17.5 6 Power Gain [dB] Icc [mA] 5.5 5 4.5 4 3.5 3 17 16.5 16 15.5 2.5 2 15 1 10 100 100 1000 RREF [kΩ] RREF [kΩ] Data Sheet 10 11 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2.8 Logic Signal Characteristics Current consumption of logic inputs VEN, VGS Logic Current IEN = f (VEN) VCC = 2.8 V, TA = 25 °C Logic Current IGS = f (VGS) VCC = 2.8 V, TA = 25 °C 6 4 4 IEN [µA] IGS [µA] 6 2 0 2 0 0.5 1 1.5 2 2.5 0 3 VEN [V] Data Sheet 0 0.5 1 1.5 2 2.5 3 VGS [V] 12 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2.9 Measured RF Characteristics 700 MHz Band Table 7 Typical Characteristics 700 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 5.6 kΩ1)2) Parameter Symbol Values Min. Pass band range Typ. 700 Unit Note / Test Condition 750 MHz F.e. band 12 and 17 Max. ICCHG – 4.8 – mA High gain mode ICCLG – 0.50 – mA Low gain mode S21HG – 15.3 – dB High gain mode S21LG – -9.9 – dB Low gain mode S12HG – -40 – dB High gain mode S12LG – -9.9 – dB Low gain mode NFHG – 1.1 – dB High gain mode NFLG – 9.9 – dB Low gain mode S11HG – -13 – dB 50 Ω, high gain mode S11LG – -14 – dB 50 Ω, low gain mode S22HG – -27 – dB 50 Ω, high gain mode S22LG – -19 – dB 50 Ω, low gain mode Stability factor k – >2.2 – Input compression point IP1dBHG – -7 – dBm High gain mode IP1dBLG – -12 – dBm Low gain mode IIP3HG IIP3LG – -8 -2 – dBm High gain mode Low gain mode Current consumption Gain Reverse isolation Noise figure Input return loss Output return loss Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 3.1 on Page 29 2) Guaranteed by device design; not tested in production Data Sheet 13 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2.10 Measured RF Characteristics 750 MHz Band Table 8 Typical Characteristics 750 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 5.6 kΩ1)2) Parameter Symbol Values Min. Pass band range Typ. 740 Unit Note / Test Condition 790 MHz F.e. band 13 and 14 Max. ICCHG – 4.8 – mA High gain mode ICCLG – 0.50 – mA Low gain mode S21HG – 15.5 – dB High gain mode S21LG – -9.8 – dB Low gain mode S12HG – -39 – dB High gain mode S12LG – -9.8 – dB Low gain mode NFHG – 1.1 – dB High gain mode NFLG – 9.8 – dB Low gain mode S11HG – -15 – dB 50 Ω, high gain mode S11LG – -12 – dB 50 Ω, low gain mode S22HG – -15 – dB 50 Ω, high gain mode S22LG – -20 – dB 50 Ω, low gain mode Stability factor k – >2.3 – Input compression point IP1dBHG – -7 – dBm High gain mode IP1dBLG – -11 – dBm Low gain mode IIP3HG IIP3LG – -7 -2 – dBm High gain mode Low gain mode Current consumption Gain Reverse isolation Noise figure Input return loss Output return loss Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 3.2 on Page 30 2) Guaranteed by device design; not tested in production Data Sheet 14 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2.11 Measured RF Characteristics 800 MHz Band Table 9 Typical Characteristics 800 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 5.6 kΩ1)2) Parameter Symbol Values Min. Pass band range Typ. 790 Unit Note / Test Condition 840 MHz F.e. band 20 Max. ICCHG – 4.8 – mA High gain mode ICCLG – 0.50 – mA Low gain mode S21HG – 15.9 – dB High gain mode S21LG – -8.4 – dB Low gain mode S12HG – -38 – dB High gain mode S12LG – -8.4 – dB Low gain mode NFHG – 1.0 – dB High gain mode NFLG – 8.4 – dB Low gain mode S11HG – -16 – dB 50 Ω, high gain mode S11LG – -11 – dB 50 Ω, low gain mode S22HG – -13 – dB 50 Ω, high gain mode S22LG – -27 – dB 50 Ω, low gain mode Stability factor k – >2.3 – Input compression point IP1dBHG – -6 – dBm High gain mode IP1dBLG – -10 – dBm Low gain mode IIP3HG IIP3LG – -8 -1 – dBm High gain mode Low gain mode Current consumption Gain Reverse isolation Noise figure Input return loss Output return loss Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 3.3 on Page 31 2) Guaranteed by device design; not tested in production Data Sheet 15 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2.12 Measured RF Characteristics 880 MHz Band Table 10 Typical Characteristics 880 MHz Band, TA = 25 °C, VCC = 2.8 V1), RREF = n/c Symbol Parameter Values Unit Note / Test Condition MHz F.e. band 5 and 6 Min. Typ. Max. 840 – 900 ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG – 3.3 – mA High gain mode – 0.5 – mA Low gain mode – 15.8 – dB High gain mode – -7.7 – dB Low gain mode – -36 – dB High gain mode – -8.0 – dB Low gain mode – 1.05 – dB High gain mode – 7.9 – dB Low gain mode – -21 – dB 50 Ω, high gain mode S11LG – -13 – dB 50 Ω, low gain mode S22HG – -21 – dB 50 Ω, high gain mode S22LG – -13 – dB 50 Ω, low gain mode Stability factor k – >2.3 – Input compression point2) IP1dBHG IP1dBLG IIP3HG IIP3LG – -5 – dBm High gain mode – -8 – dBm Low gain mode – -7 1 – dBm High gain mode Low gain mode Pass band range Current consumption Gain 2) Reverse Isolation Noise figure Input return loss 2) 2) Output return loss 3) 2) Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 3.4 on Page 32 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 16 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2.13 Measured RF Characteristics 900 MHz band Table 11 Typical Characteristics 900 MHz Band, TA = 25 °C, VCC = 2.8 V1)2), RREF = n/c Parameter Symbol Values Unit Note / Test Condition MHz F.e. band 8 Min. Typ. Max. 900 – 1040 ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG – 3.3 – mA High gain mode – 0.5 – mA Low gain mode – 15.5 – dB High gain mode – -7.2 – dB Low gain mode – -36 – dB High gain mode – -7.0 – dB Low gain mode – 1.15 – dB High gain mode – 7.7 – dB Low gain mode – -12 – dB 50 Ω, high gain mode S11LG – -15 – dB 50 Ω, low gain mode S22HG – -12 – dB 50 Ω, high gain mode S22LG – -12 – dB 50 Ω, low gain mode Stability factor k – >2.3 – Input compression point IP1dBHG IP1dBLG IIP3HG IIP3LG – -4 – dBm High gain mode – -5 – dBm Low gain mode – -6 1 – dBm High gain mode Low gain mode Pass band range Current consumption Gain Reverse Isolation Noise figure Input return loss Output return loss Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 3.5 on Page 33 2) Guaranteed by device design; not tested in production. Data Sheet 17 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2.14 Measured RF Characteristics 1100 MHz band Table 12 Typical Characteristics 1100 MHz Band, TA = 25 °C, VCC = 2.8 V1)2), RREF = 8.2 kΩ Parameter Symbol Values Unit Note / Test Condition MHz – Min. Typ. Max. 1040 – 1150 ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG – 4.3 – mA High gain mode – 0.5 – mA Low gain mode – 16.2 – dB High gain mode – -7.0 – dB Low gain mode – -36 – dB High gain mode – -7.0 – dB Low gain mode – 1.2 – dB High gain mode – 7.0 – dB Low gain mode – -15 – dB 50 Ω, high gain mode S11LG – -10 – dB 50 Ω, low gain mode S22HG – -15 – dB 50 Ω, high gain mode S22LG – -11 – dB 50 Ω, low gain mode Stability factor k – >2.3 – Input compression point IP1dBHG IP1dBLG IIP3HG IIP3LG – -5 – dBm High gain mode – -2 – dBm Low gain mode – -3 3 – dBm High gain mode Low gain mode Pass band range Current consumption Gain Reverse Isolation Noise figure Input return loss Output return loss Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 3.6 on Page 34 2) Guaranteed by device design; not tested in production. Data Sheet 18 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2.15 Measured Performance Band 13 Application High Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V, RREF = 5.6 kΩ Power Gain |S21| = f ( f ) Power Gain wideband |S21| = f ( f ) 18 20 10 17 Power Gain [dB] Power Gain [dB] 0 16 15 14 −10 −20 −30 −40 13 12 0.74 −50 0.745 0.75 0.755 0.76 0.765 −60 0.77 0 1 Frequency [GHz] −5 1.3 −10 1.2 NF [dB] |S11|, |S22| [dB] 1.4 S22 −15 S11 1 −25 0.9 0.755 0.76 0.765 0.8 0.74 0.77 Frequency [GHz] Data Sheet 5 6 7 8 1.1 −20 0.75 4 Noise Figure NF = f ( f ) 0 0.745 3 Frequency [GHz] Matching |S11| = f ( f ), |S22| = f ( f ) −30 0.74 2 0.745 0.75 0.755 0.76 0.765 0.77 Frequency [GHz] 19 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2.16 Measured Performance Band 13 Application High Gain Mode vs. Temperature VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V, f = 750 MHz, RREF = 5.6 kΩ Power Gain |S21| = f (TA) Supply Current ICC = f (TA) 18 7 6.5 17 5.5 16 ICC [mA] Power Gain [dB] 6 15 5 4.5 4 14 3.5 13 −40 −20 0 20 40 60 80 3 −40 100 −20 0 TA [°C] 20 40 60 80 100 60 80 100 TA [°C] Input Compression P1dB = f (TA) Noise Figure NF = f (TA) −2 1.8 1.6 −4 NF [dB] P1dB [dBm] 1.4 −6 −8 1.2 1 −10 −12 −40 0.8 −20 0 20 40 60 80 0.6 −40 100 TA [°C] Data Sheet −20 0 20 40 TA [°C] 20 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2.17 Measured Performance Band 13 Application Low Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V, RREF = 5.6 kΩ Power Gain wideband |S21| = f ( f ) −7 0 −8 −10 Power Gain [dB] Power Gain [dB] Power Gain |S21| = f ( f ) −9 −10 −11 −12 −13 0.74 −20 −30 −40 −50 0.745 0.75 0.755 0.76 0.765 −60 0.77 0 1 Frequency [GHz] 11 −5 10 S 11 −10 5 6 7 8 9 NF [dB] |S11|, |S22| [dB] 4 Noise Figure NF = f ( f ) 0 −15 S22 −20 8 7 −25 6 0.745 0.75 0.755 0.76 0.765 5 0.74 0.77 Frequency [GHz] Data Sheet 3 Frequency [GHz] Matching |S11| = f ( f ), |S22| = f ( f ) −30 0.74 2 0.745 0.75 0.755 0.76 0.765 0.77 Frequency [GHz] 21 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2.18 Measured Performance Band 13 Application Low Gain Mode vs. Temperature VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V, f = 750 MHz, RREF = 5.6 kΩ Power Gain |S21| = f (TA) Supply Current ICC = f (TA) 0.7 −7 0.65 −8 −9 0.55 ICC [mA] Power Gain [dB] 0.6 −10 0.5 0.45 −11 0.4 −12 −13 −40 0.35 −20 0 20 40 60 80 0.3 −40 100 −20 0 20 40 60 80 100 60 80 100 TA [°C] TA [°C] Input Compression P1dB = f (TA) Noise Figure NF = f (TA) 0 11 −2 10 −4 9 −8 NF [dB] P1dB [dBm] −6 −10 −12 8 7 −14 −16 6 −18 −20 −40 −20 0 20 40 60 80 5 −40 100 TA [°C] Data Sheet −20 0 20 40 TA [°C] 22 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2.19 Measured Performance Band 5 Application High Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V, RREF = n/c Power Gain |S21| = f ( f ) Power Gain wideband |S21| = f ( f ) 20 18 10 17 Power Gain [dB] Power Gain [dB] 0 −30°C 25°C 16 85°C 15 −10 −20 −30 −40 14 −50 13 0.86 −60 0.87 0.88 0.89 0.9 0 2 4 6 8 Frequency [GHz] Frequency [GHz] Gainstep HG-LG |ΔS21| = f ( f ) Matching |S11| = f ( f ), |S22| = f ( f ) 0 24 −5 25°C −30°C −10 Delta Gain [dB] |S11|, |S22| [dB] 23.5 S22 −15 −20 S 85°C 23 22.5 11 −25 −30 0.86 0.87 0.88 0.89 22 0.86 0.9 Frequency [GHz] Data Sheet 0.87 0.88 0.89 0.9 Frequency [GHz] 23 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 1.6 0 1.5 −2 1.4 −4 P1dB [dBm] NF [dB] 1.3 1.2 1.1 −12 0.9 0.87 0.88 0.89 −14 0.86 0.9 Frequency [GHz] Data Sheet −8 −10 1 0.8 0.86 −6 0.87 0.88 0.89 0.9 Frequency [GHz] 24 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2.20 Measured Performance Band 5 Application High Gain Mode vs. Temperature TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V, f = 800 MHz, RREF = n/c Supply Current ICC = f (TA) 19 5 18 4.5 17 4 ICC [mA] Power Gain [dB] Power Gain |S21| = f (TA) 16 3.5 15 3 14 2.5 13 −40 −20 0 20 40 60 80 2 −40 100 −20 0 TA [°C] 20 40 60 80 100 TA [°C] Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 1.8 0 −2 1.6 −4 P1dB [dBm] NF [dB] 1.4 1.2 −6 −8 1 −10 0.8 0.6 −40 −12 −20 0 20 40 60 80 −14 −40 100 TA [°C] Data Sheet −20 0 20 40 60 80 100 TA [°C] 25 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2.21 Measured Performance Band 5 Application Low Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V, RREF = n/c Power Gain wideband |S21| = f ( f ) −5 0 −6 −10 −7 Power Gain [dB] Power Gain [dB] Power Gain |S21| = f ( f ) −30°C 25°C −8 85°C −9 −10 −11 0.86 −20 −30 −40 −50 0.87 0.88 0.89 −60 0.9 Frequency [GHz] 0 2 4 6 8 Frequency [GHz] Matching |S11| = f ( f ), |S22| = f ( f ) 0 |S11|, |S22| [dB] −5 S11 −10 S 22 −15 −20 −25 −30 0.86 0.87 0.88 0.89 0.9 Frequency [GHz] Data Sheet 26 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 11 0 10 −2 −4 P1dB [dBm] NF [dB] 9 8 −6 −8 7 −10 6 5 0.86 −12 0.87 0.88 0.89 −14 0.86 0.9 Frequency [GHz] Data Sheet 0.87 0.88 0.89 0.9 Frequency [GHz] 27 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Electrical Characteristics 2.22 Measured Performance Band 5 Application Low Gain Mode vs. Temperature TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V, f = 800 MHz, RREF = n/c Power Gain |S21| = f (TA) Supply Current ICC = f (TA) −5 0.7 0.65 −6 0.55 ICC [mA] Power Gain [dB] 0.6 −7 −8 0.5 0.45 −9 0.4 −10 −11 −40 0.35 −20 0 20 40 60 80 0.3 −40 100 −20 0 TA [°C] 20 40 60 80 100 TA [°C] Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 11 0 10 −2 −4 P1dB [dBm] NF [dB] 9 8 −6 −8 7 −10 6 5 −40 −12 −20 0 20 40 60 80 −14 −40 100 TA [°C] Data Sheet −20 0 20 40 60 80 100 TA [°C] 28 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Application Circuit and Block Diagram 3 Application Circuit and Block Diagram 3.1 700 MHz Band Application Circuit Schematic C1 3.3pF RFIN 700 MHz C3 8.2pF RFOUT 700 MHz 6 1 L1 10nH L2 7.5nH RFOUT RFIN C2 100pF VEN = 0 / 2.8 V 2 Biasing & Logic Circuitry 5 RREF VEN VGS = 0 / 2.8 V 4 3 VGS VCC R REF 5.6k½ VCC = 2.8 V C4 10nF 7 GND BGA751N7_Appl_BlD_Bands_XII_XVII.vsd Figure 2 Application Circuit with Chip Outline (top view) Note: Package paddle (Pin 7) has to be RF grounded. Table 13 Parts List Part Number Part Type Manufacturer Size Comment L1 ... L2 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C4 Chip capacitor Various 0402 RREF Chip resistor Various 0402 Data Sheet 29 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Application Circuit and Block Diagram 3.2 750 MHz Band Application Circuit Schematic C1 3.0pF RFIN 750 MHz C3 8.2pF L1 10nH RFOUT 750 MHz 6 1 L2 7.5nH RFOUT RFIN C2 100pF VEN = 0 / 2.8 V 2 Biasing & Logic Circuitry 5 RREF VEN VGS = 0 / 2.8 V 4 3 VGS VCC R REF 5.6k½ VCC = 2.8 V C4 10nF 7 GND BGA751N7_Appl_BlD_Bands_XIII_XIV.vsd Figure 3 Application Circuit with Chip Outline (top view) Note: Package paddle (Pin 7) has to be RF grounded. Table 14 Parts List Part Number Part Type Manufacturer Size Comment L1 ... L2 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C4 Chip capacitor Various 0402 RREF Chip resistor Various 0402 Data Sheet 30 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Application Circuit and Block Diagram 3.3 800 MHz Band Application Circuit Schematic C1 3.3pF RFIN 800 MHz C3 8.2pF L1 9.1nH RFOUT 800 MHz 6 1 L2 9.1nH RFOUT RFIN C2 100pF VEN = 0 / 2.8 V 2 Biasing & Logic Circuitry 5 RREF VEN VGS = 0 / 2.8 V 4 3 VGS VCC R REF 5.6k½ VCC = 2.8 V C4 10nF 7 GND BGA751N7_Appl_BlD_Band_XX.vsd Figure 4 Application Circuit with Chip Outline (top view) Note: Package paddle (Pin 7) has to be RF grounded. Table 15 Parts List Part Number Part Type Manufacturer Size Comment L1 ... L2 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C4 Chip capacitor Various 0402 RREF Chip resistor Various 0402 Data Sheet 31 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Application Circuit and Block Diagram 3.4 880 MHz Band Application Circuit Schematic C1 3pF RFIN 880 MHz C2 100pF L1 7.5nH VEN = 0 / 2.8 V 2 VEN VGS = 0 / 2.8 V RFOUT 880 MHz 6 1 RFIN RFOUT Biasing & Logic Circuitry 5 RREF 4 3 VGS VCC n/c VCC = 2.8 V C3 10nF 7 GND BGA751N7_Appl_BlD.vsd Figure 5 Application Circuit with Chip Outline (top view) Note: Package paddle (Pin 7) has to be RF grounded. Table 16 Parts List Part Number Part Type Manufacturer Size Comment L1 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C3 Chip capacitor Various 0402 Data Sheet 32 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Application Circuit and Block Diagram 3.5 900 MHz Band Application Circuit Schematic C1 3pF RFIN 900 MHz C2 100pF L2 3.3nH L1 6.2nH VEN = 0 / 2.8 V 2 VEN VGS = 0 / 2.8 V 6 1 RFIN RFOUT Biasing & Logic Circuitry RFOUT 900 MHz 5 RREF 4 3 VGS VCC n/c VCC = 2.8 V C3 10nF 7 GND BGA751N7_Appl_BlD_Band_VIII.vsd Figure 6 Application Circuit with Chip Outline (top view) Note: Package paddle (Pin 7) has to be RF grounded. Table 17 Parts List Part Number Part Type Manufacturer Size Comment L1, L2 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C3 Chip capacitor Various 0402 Data Sheet 33 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Application Circuit and Block Diagram 3.6 1100 MHz Band Application Circuit Schematic C2 20pF C1 2.7pF RFIN 1100 MHz L2 1.5nH L1 6.2nH VEN = 0 / 2.8 V RFOUT RFIN 2 Biasing & Logic Circuitry L3 3.9nH 5 RREF VEN VGS = 0 / 2.8 V RFOUT 1100 MHz 6 1 R REF 8.2k½ VCC = 2.8 V 4 3 VGS VCC C3 10nF 7 GND BGA751N7_Appl_BlD_1100MHz.vsd Figure 7 Application Circuit with Chip Outline (top view) Note: Package paddle (Pin 7) has to be RF grounded. Table 18 Parts List Part Number Part Type Manufacturer Size Comment L1 ... L3 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C3 Chip capacitor Various 0402 RREF Chip resistor Various 0402 3.7 Pin Definition Table 19 Pin Definition and Function Pin Number Symbol Function 1 RFIN LNA input 2 VEN Band select control 3 VGS Gain step control 4 VCC Supply voltage 5 RREF Bias current reference resistor (high gain mode) 6 RFOUT LNA output 7 GND Package paddle; ground connection for LNA and control circuitry Data Sheet 34 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Application Circuit and Block Diagram 3.8 Application Board Top layer (top view) Middle layer (top view) Bottom layer (top view) BGA751N7_App_Board.vsd Figure 8 Application Board Layout on 3-layer FR4 Note: Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 17 mm Cu metallization, gold plated. Board size: 21 x 19mm. 0.017 mm 0.100 mm Copper Prepreg FR4 0.100 mm 0.035 mm Prepreg FR4 Copper 0.460 mm FR4 0.100 mm Prepreg FR4 0.100 mm 0.017 mm Prepreg FR4 Copper BGA751N7_Cross_Section_View.vsd Figure 9 Data Sheet Cross-Section view of Application Board 35 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Application Circuit and Block Diagram 1 VEN 2 7 3 6 RFOUT 5 RREF VGS GND 4 VCC RFIN BGA751N7_App_Board_exact.vsd Figure 10 Detail of Application Board Layout Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. Data Sheet 36 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Physical Characteristics 4 Physical Characteristics 4.1 Package Footprint NSM D SMD Copper 0.25 1.9 0.2 0.3 Copper 0.2 R0.1 0.25 0.3 Stencil apertures Solder mask 0.25 0.2 0.2 0.3 R0.1 0.25 0.3 0.2 0.25 1.9 1.9 0.2 0.25 0.2 0.3 0.25 0.2 0.2 0.25 0.2 0.2 1.9 0.3 1.4 0.2 1.4 0.2 1.4 0.2 1.4 Stencil apertures Solder mask TSNP-7-1-FP V01 Figure 11 Footprint Recommendation 1 for the TSNP-7-1 Package N SMD 0.5 0.25 0.25 0.18 0.4 0.1 1.95 0.18 1.1 1.95 1.2 0.25 0.25 0.25 0.25 1.25 1.25 Copper Solder mask Stencil apertures TSNP-7-1-N-FP V01 Figure 12 Data Sheet Footprint Recommendation 2 for the TSNP-7-1 Package 37 Revision 3.1, 2013-01-31 BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Physical Characteristics Package Dimensions Top view Bottom view 1.3 ±0.05 0.375 +0.025 -0.015 1.15 ±0.05 1) 0.02 MAX. 1 ±0.05 6 1.75 ±0.05 7 3 Pin 1 marking 2 1 6 x 0.2 ±0.05 1) 1) Dimension applies to plated terminals Figure 13 2 ±0.05 5 1.1 ±0.05 1) 4 6 x 0.25 ±0.05 1) 4.2 TSNP-7-1-PO V02 Package Outline (top, side and bottom view) 4 8 2.3 0.5 1.6 Pin 1 marking Figure 14 Tape & Reel Dimensions 4.3 Product Marking Pattern TSNP-7-1-TP V01 123 Type code Date code (YYWW) Pin 1 marking TSNP-7-1-MK V01 Figure 15 Data Sheet Marking Pattern (top view) 38 Revision 3.1, 2013-01-31 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG