CM400DU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 400 Amperes/1200 Volts A "R" (4 PLACES) E F G G2 H K E1 C1 E E2 B C2E1 E2 J M J G1 L "T" (4 PLACES) N P "S" (3 PLACES) Q D C G2 E2 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 5.12 130.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Dimensions Inches K 1.65 Millimeters 42.0 B 5.12 130.0 L 1.42 36.0 C 1.38 35.0 M 1.72 43.8 D 0.96 24.5 N 0.54 13.8 E 4.33 110.0 P 0.45 11.5 F 0.39 10.0 Q 5.51 140.0 G 0.39 10.0 R 0.26 Dia 6 . .5 Dia. H 0.81 20.5 S M8 M8 J 0.53 14.5 T M4 M4 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM400DU-24H is a 1200V (VCES), 400 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 400 24 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-24H Dual IGBTMOD™ U-Series Module 400 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM400DU-24H Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 400 Amperes ICM 800* Amperes Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) IE 400 Amperes Peak Emitter Current** IEM 800* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 2100 Watts Mounting Torque, M8 Main Terminal – 95 in-lb Mounting Torque, M6 Mounting – 40 in-lb G(E) Terminal, M4 – 15 in-lb – 310 Grams Viso 2500 Volts Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. ICES VCE = VCES, VGE = 0V – – 2 Units mA IGES VGE = VCES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 40mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) Gate Leakage Voltage IC = 400A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts IC = 400A, VGE = 15V, Tj = 125°C – 2.85 – Volts Total Gate Charge QG VCC = 600V, IC = 400A, VGE = 15V – 1500 Emitter-Collector Voltage** VEC IE = 400A, VGE = 0V – – – Min. Typ. – – 60 nf – – 21 nf – – 12 nf – – – ns 3.2 nC Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Times Fall Time Test Conditions VCE = 10V, VGE = 0V VCC = 600V, IC = 400A, Max. Units tr VGE1 = VGE2 = 15V, – – – ns td(off) RG = 0.78⍀, Resistive – – – ns tf Load Switching Operation – – – ns trr IE = 400A, diE/dt = -800A/µs – – 300 ns Qrr IE = 400A, diE/dt = -800A/µs **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). – 2.2 – µC Max. Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.06 °C/W Thermal Resistance, Junction to Case Rth(j-c)R Per FWDi 1/2 Module – – 0.09 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.019 – °C/W 2 Contact Thermal Resistance Units Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-24H Dual IGBTMOD™ U-Series Module 400 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) 800 15 12 VGE = 20V 600 11 400 10 200 9 8 600 400 200 0 0 0 2 4 6 8 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 10 4 8 12 16 0 20 200 400 600 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 10 102 4 IC = 160A 8 12 16 101 1.0 20 2.5 3.0 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 td(off) td(on) VCC = 600V VGE = ±15V RG = 0.78 Ω Tj = 125°C 102 COLLECTOR CURRENT, IC, (AMPERES) Coes 100 Cres 103 Irr 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE di/dt = -800A/µsec Tj = 25°C 102 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 trr 10-1 10-1 3.5 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) tr 101 101 2.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) tf 102 1.5 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY TIME, trr, (ns) 103 4 101 VGE = 0V f = 1MHz 0 0 102 Cies 101 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 2 CAPACITANCE, Cies, Coes, Cres, (nF) IC = 800A IC = 400A REVERSE RECOVERY CURRENT, Irr, (AMPERES) 8 6 800 Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 800 SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 400A 16 VCC = 400V VCC = 600V 12 8 4 0 0 400 800 1200 1600 2000 GATE CHARGE, QG, (nC) 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 4 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.06°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM400DU-24H Dual IGBTMOD™ U-Series Module 400 Amperes/1200 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.09 °C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3